研究目的
To detect the seeding point in the preparation of large-diameter sapphire single crystal using the OCS method, improving upon existing methods for better accuracy and efficiency.
研究成果
The OCS method effectively detects the seeding point, performing similarly to skilled manual methods and better than the Churl Min Kim method in terms of success rate, attempt reduction, and time efficiency, making it suitable for industrial applications in sapphire crystal growth.
研究不足
The method relies on the assumption that the spoke pattern center converges to the real seeding point, which may not hold under all conditions; errors in image processing and model fitting could affect accuracy; the experimental setup is specific to laboratory conditions and may not fully replicate industrial environments.
1：Experimental Design and Method Selection:
The OCS method is used, involving image processing techniques for ROI detection, thresholding, closed operation, connected domain elimination, skeletonizing, skeleton elimination, and corner detection to locate the spoke pattern center, followed by convergence model fitting to determine the real seeding point.
2：Sample Selection and Data Sources:
Images of the free surface of the melt in a sapphire crystal growth furnace are captured using an industrial CCD.
3：List of Experimental Equipment and Materials:
Crystal reaction furnace, pull rod drive device, industrial CCD (FLIR GS3-U3-14S5C), industrial lens with focal length 50mm, neutral density filter with 45% transmittance, industrial personal computer with 1T storage,
4：8GHz CPU, 16GB RAM. Experimental Procedures and Operational Workflow:
The CCD captures images, which are processed by the OCS algorithm to detect the seeding point; the pull rod is then moved to this point. Experiments are conducted in groups with comparisons to manual and Churl Min Kim methods.
5：Data Analysis Methods:
Statistical comparison of successful seeding attempts, number of attempts, and average time across different methods.
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