1：Experimental Design and Method Selection:

The study involved fabricating ZnTe thin films using RF magnetron sputtering and characterizing their physical and electrical properties to evaluate OTS behavior. Theoretical models such as the space-charge limited conduction model were employed to explain the switching mechanism.

2：Sample Selection and Data Sources:

ZnTe thin films were deposited on patterned tungsten substrates using a ZnTe compound single target. Samples were analyzed after deposition and post-annealing at various temperatures.

3：List of Experimental Equipment and Materials:

Equipment included an RF magnetron sputtering system, X-ray photoelectron spectroscopy (XPS, K-alpha, Thermo VG), Rutherford back scattering (RBS, National Electrostatics Corporation 5SDH-4), UV-visible spectroscopy (JASCO Corporation, V-650), transmittance electron microscopy (TEM, JEOL JEM-F200), photoluminescence (PL, LabRAM ARAMIS), X-ray diffraction (XRD, Rigaku Ultima IV), and an Agilent B1500A analyzer. Materials included high-purity Ar gas and ZnTe target.

4：Experimental Procedures and Operational Workflow:

Films were deposited at a base pressure of 10–7 torr, process pressure of 10?3 torr, and substrate temperature of 300 K. Chemical composition was analyzed by XPS and RBS. Optical band gaps were measured via UV-vis spectroscopy, crystallinity by XRD and GI-XRD, and electrical properties by I-V measurements with a two-probe contact. Post-annealing was done at 200, 300, and 400°C for 30 min. AC pulse tests were conducted for switching speed and endurance.

5：Data Analysis Methods:

Data were analyzed using methods such as Tauc plot for band gap estimation, SCLC model for conduction analysis, and statistical analysis for device variability.