研究目的
To investigate the electrical properties and stability of zinc-tin oxide (ZTO) thin-film transistors prepared using a near-field assisted electrohydrodynamic (NF-EHD) jet spray system.
研究成果
The near-field assisted EHD jet spray system successfully produced ZTO thin-film transistors with good electrical properties and improved bias stability. The optimized voltage difference between tip and near-field (2.5-3 kV) enabled proper spraying. Although mobility was slightly lower, the reduction in oxygen vacancies and hydroxyl groups enhanced device stability under bias stress, making this method promising for oxide TFT fabrication.
研究不足
The spray patterns were inhomogeneous, leading to variations in film thickness and roughness. The mobility of NF-EHD sprayed TFTs was lower compared to non-near-field EHD sprayed TFTs due to fewer oxygen vacancies. The system requires precise control of voltage differences to avoid non-uniform film formation.
1:Experimental Design and Method Selection:
A near-field assisted EHD jet spray system was developed by adding a ring-type electrode around the needle tip to control spray patterns and droplet characteristics. The method involves applying electric fields to jet and spray the ZTO solution onto substrates.
2:Sample Selection and Data Sources:
ZTO thin-films were sprayed onto silicon wafers with a 300 nm thick silicon oxide insulator. The solution was prepared by mixing tin chloride and zinc acetate dihydrate in 2-ethoxyethanol.
3:List of Experimental Equipment and Materials:
Equipment includes an EHD spray system with a ring electrode, thermal annealing oven, X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM, Joel), ellipsometer (Gartner L116D), atomic force microscope (AFM, PSIA XE-150), semiconductor parameter analyzer (Keithley 4200), and X-ray photoelectron spectrometer (XPS, Thermo VG ESCA Sigma Probe). Materials include ZTO precursor solution, silicon wafers, and aluminum for electrodes.
4:Experimental Procedures and Operational Workflow:
The NF-EHD jet was sprayed with optimized parameters (e.g., nozzle voltage 8 kV, ring voltage 5.2 kV, spray distance 45 mm, substrate temperature room temperature, spray time 60 s). Films were annealed at 400°C for one hour. Electrical and structural characterizations were performed using the listed equipment.
5:2 kV, spray distance 45 mm, substrate temperature room temperature, spray time 60 s). Films were annealed at 400°C for one hour. Electrical and structural characterizations were performed using the listed equipment.
Data Analysis Methods:
5. Data Analysis Methods: Electrical properties were derived from transfer curves using saturation equations. XRD, SEM, AFM, and XPS data were analyzed to assess film morphology, crystallinity, and composition. Statistical analysis of oxygen vacancies and hydroxyl groups was done using XPS peak fitting.
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