研究目的
To investigate primary defects introduced in boron-doped silicon by alpha-particle irradiation at cryogenic temperatures using deep-level transient spectroscopy (DLTS), focusing on defects not observable at room temperature.
研究成果
Defects H(0.10), H(0.14), and H(0.18) were observed after low-temperature alpha-particle irradiation and identified as boron-substitutional vacancy complex (B configuration), mono vacancy, and a divacancy-related defect, respectively. These defects were not detectable after room-temperature irradiation due to recombination or reaction forming secondary defects. The findings contribute to understanding primary defect behavior in silicon under cryogenic conditions.
研究不足
The skewed baseline in DLTS spectra made Laplace-DLTS measurements impossible, limiting detailed defect analysis. The study was constrained to specific irradiation conditions and temperature ranges, and comparisons were made only with prior literature, not extensive experimental variations.
1：Experimental Design and Method Selection:
The study used deep-level transient spectroscopy (DLTS) to characterize defects in boron-doped p-type silicon after alpha-particle irradiation at 35 K. The rationale was to observe primary defects that are mobile and recombine at higher temperatures. Theoretical models included Arrhenius analysis for defect energy levels and capture cross-sections.
2：Sample Selection and Data Sources:
Boron-doped p-type float-zone silicon wafers with a carrier concentration of 1.9 × 10^15 cm^-3 were used. Samples were cleaned and prepared with aluminum Schottky diodes and indium-gallium eutectic ohmic contacts.
3：9 × 10^15 cm^-3 were used. Samples were cleaned and prepared with aluminum Schottky diodes and indium-gallium eutectic ohmic contacts.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included a closed-cycle helium cryostat, a 5.4 MeV Am-241 alpha-particle source, a Lakeshore 332 temperature controller, resistive evaporation chamber, DLTS measurement system, and materials such as trichloroethylene, isopropanol, methanol, hydrofluoric acid, aluminum, and indium-gallium eutectic.
4：4 MeV Am-241 alpha-particle source, a Lakeshore 332 temperature controller, resistive evaporation chamber, DLTS measurement system, and materials such as trichloroethylene, isopropanol, methanol, hydrofluoric acid, aluminum, and indium-gallium eutectic.
Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Samples were cleaned, etched, and contacts fabricated. Irradiation was performed at 35 K with alpha particles at a fluence rate of 7 × 10^6 cm^-2 s^-1 for 132 hours to a fluence of 1.3 × 10^13 cm^-2. DLTS measurements were conducted in the 35–110 K range with specific bias and pulse settings.
5：3 × 10^13 cm^-DLTS measurements were conducted in the 35–110 K range with specific bias and pulse settings.
Data Analysis Methods:
5. Data Analysis Methods: Data were analyzed using Arrhenius plots to determine defect energy levels and apparent capture cross-sections from the slope and y-intercept of log(ep/T^2) versus (1000/T) plots.
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