研究目的
To test nanosecond semiconductor cavity switches with subterahertz gyrotrons under stressful microwave power conditions and provide a theoretical estimation for the microwave power limit.
研究成果
The nanosecond semiconductor switches can withstand stressful microwave powers up to air breakdown levels without damage, showing improved resonant characteristics due to cleaning effects. Theoretical estimates align with experimental results, confirming the switches' suitability for use with high-power gyrotrons in applications like subterahertz radars and NMR spectroscopy.
研究不足
Experiments were limited by overheating and discharge risks at high powers, preventing further escalation. Measurement errors and calibration issues may affect precision, especially in low-power regimes. The theoretical approximation for power reduction introduces errors due to differing heating mechanisms.
1：Experimental Design and Method Selection:
The study involves stress testing of nanosecond semiconductor switches using continuous wave (CW) and pulsed gyrotrons. Theoretical modeling is based on Maxwell's equations and a modified Finite Difference Time Domain (FDTD) method with Unsplit Perfectly Matched Layer (UPML) for boundary conditions.
2：Sample Selection and Data Sources:
The switch prototypes are designed for 220-330 GHz frequency bands, using gallium arsenide (GaAs) semiconductor plates. Experiments are conducted with gyrotrons operating around 300 GHz.
3：List of Experimental Equipment and Materials:
Equipment includes CW and pulsed gyrotrons, laser drivers, waveguides (WR3 standard), horns for energy collection, and measurement setups for insertion loss. Materials include GaAs semiconductor plates and brass resonator walls.
4：Experimental Procedures and Operational Workflow:
The switch is exposed to microwave radiation from gyrotrons at varying powers and durations. Insertion loss is measured before and after exposures. Laser pulses are used for driving and comparison. Data on resonance depth and frequency shifts are recorded.
5：Data Analysis Methods:
Insertion loss curves are analyzed to observe changes in resonance characteristics. Theoretical power limits are estimated using equations relating microwave and laser heating effects.
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