研究目的
To develop a new critical dimension (CD) shrink technique without CD loading by integrating atomic layer deposition (ALD) into the etching flow for advanced patterning processes towards 5/7 nm generation.
研究成果
The integration of ALD into the etching flow enables CD shrink without CD loading, with precise control at the atomic layer level and excellent uniformity. This approach also reduces line edge roughness (LER) and line width roughness (LWR), addressing key challenges in patterning for 5/7 nm generations. Future work may involve expanding ALD to other etching processes and developing atomic layer etching (ALE) technologies.
研究不足
The paper does not explicitly mention specific limitations, but potential areas for optimization could include scalability to larger wafers, integration with other etching technologies, and addressing any residual damage from plasma processes.
1：Experimental Design and Method Selection:
The study utilized a reactive ion etching (RIE) apparatus with DC superimposition capability to integrate ALD processes into the etching flow for CD control. ALD was chosen for its self-limiting reaction characteristics to achieve uniform deposition without pattern dependency.
2：Sample Selection and Data Sources:
Silicon-based blanket wafers and line-and-space (L/S) patterns were used as samples. Data were collected using critical dimension-scanning electron microscope (CD-SEM) for CD measurements and optical film thickness meters for film thickness.
3：List of Experimental Equipment and Materials:
Equipment includes a parallel plate RIE apparatus with DC superimposition (model not specified), CD-SEM for pattern measurement, and optical film thickness meter. Materials include Si precursor for ALD, O2 plasma for oxidation, and fluorocarbon (FC) films for comparison in conventional methods.
4：Experimental Procedures and Operational Workflow:
The process involved ALD cycles (adsorption of Si precursor followed by O2 plasma oxidation) integrated into the multi-layer resist mask etching flow. Steps included Si-ARC etching without CD shrink, ALD-based CD shrink, etch back of SiO2, and SOC etching. CD measurements were performed at various stages.
5：Data Analysis Methods:
Data were analyzed using CD-SEM for CD measurements, with statistical analysis of CD uniformity (3σ values) and cycle-dependent shrink amounts. Comparisons were made between ALD and conventional CVD methods.
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