研究目的
Investigating the effect of passivation layer deposition condition on the electrical performance of self-aligned top-gate a-IGZO TFTs, including the reduction of parasitic resistance and the impact of hydrogen diffusion.
研究成果
SiNx passivation layers reduce parasitic resistance more effectively than SiOx, but higher deposition temperatures cause hydrogen lateral diffusion, shrinking effective channel length and degrading performance in short-channel devices. Control of deposition conditions is crucial to balance resistance reduction and minimize diffusion.
研究不足
The study is limited to specific deposition temperatures and materials (SiOx and SiNx); higher temperatures lead to hydrogen diffusion issues, particularly in short-channel devices, which may not be optimized. The findings are based on laboratory-scale fabrication and may not account for all real-world variations.
1：Experimental Design and Method Selection:
The study involves fabricating self-aligned top-gate a-IGZO TFTs with different passivation layers (SiOx or SiNx) deposited by PECVD at various temperatures to form conductive source/drain regions via hydrogen incorporation. Electrical characteristics are measured to analyze performance.
2：Sample Selection and Data Sources:
Devices are fabricated on glass substrates with specified channel widths and lengths (e.g., 20μm width, lengths of 20, 10, 5, and 3μm). Data is collected from electrical measurements.
3：List of Experimental Equipment and Materials:
Equipment includes DC sputtering system for a-IGZO and Mo deposition, PECVD system for SiOx and SiNx deposition, and Agilent B1500 semiconductor analyzer for electrical measurements. Materials include glass substrates, a-IGZO, SiOx, SiNx, Mo, and N2O plasma.
4：Experimental Procedures and Operational Workflow:
Steps include depositing a-IGZO active layer, N2O plasma treatment, depositing gate insulator and gate electrode, etching, depositing passivation layer at specified temperatures, forming source/drain metal, and performing electrical measurements in dark conditions.
5：Data Analysis Methods:
Electrical parameters (e.g., threshold voltage, field-effect mobility, subthreshold slope) are extracted from transfer characteristics. Transmission line method (TLM) is used to extract parasitic resistance and effective channel length differences.
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