研究目的
To analyze the structural and optical properties of Ga2Se3 crystals using spectroscopic ellipsometry and x-ray diffraction, determining optical constants, critical points, and band gap energy.
研究成果
Ga2Se3 crystals were characterized with an indirect band gap of 2.02 eV, critical points at 2.70 eV, 3.45 eV, 3.83 eV, and 4.45 eV. Optical parameters from models include single oscillator energy of 4.09 eV, dispersion energy of 19.6 eV, zero-frequency refractive index of 2.41, dielectric constant of 5.79, and N/m* of 2.2 × 10^51 kg^{-1} cm^{-3}. The material is suitable for optoelectronic applications due to its visible range band gap.
研究不足
The study is limited to Ga2Se3 crystals grown by the Bridgman method at specific conditions; deviations from stoichiometry may affect results. The energy range for ellipsometry is 1.2–6.2 eV, and measurements are at room temperature only.
1：Experimental Design and Method Selection:
Ga2Se3 single crystals were grown by the Bridgman method. Structural properties were analyzed using XRD, and optical properties were characterized using ellipsometry.
2：Sample Selection and Data Sources:
High-purity elements (at least
3：999%) were used to grow crystals in stoichiometric proportions. List of Experimental Equipment and Materials:
ZEISS EVO 15 scanning electron microscope for EDS, Rigaku miniflex diffractometer for XRD, SOPRA GES-5E rotating polarizer ellipsometer for ellipsometry.
4：Experimental Procedures and Operational Workflow:
Crystals were grown in silica tubes with a thermal gradient, moved at
5：5 mm/h. XRD measurements in 2θ range 20°–90° with scanning speed 02°/s. Ellipsometry conducted from 2 eV to 2 eV at 300 K with incident light angle 70°. Data Analysis Methods:
Lattice parameters found using DICVOL 04 program. Dielectric function components analyzed, critical points determined from second derivatives, band gap from absorption coefficient using (αhν)^(1/2) vs. hν plot.
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