1：Experimental Design and Method Selection:

The study uses a one-step self-assembly method to synthesize TA-Fe (III) coordination complex films on various substrates for memory device fabrication. Theoretical models include charge trapping and conductive filament mechanisms for ternary memory behavior.

2：Sample Selection and Data Sources:

Substrates include ITO glass, PET, PI, printer paper, and grapefruit leaf. Samples are prepared with specific treatments (e.g., piranha solution for ITO) and film growth cycles (10-30 times).

3：List of Experimental Equipment and Materials:

Materials include ferric chloride hexahydrate, tannic acid, NaOH, ultrapure water, ethanol, acetone, PET, PI, paper, leaf. Equipment includes atomic force microscopy (AFM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), UV-Vis spectrometer, Keithley 4200-SCS for I-V measurements, thermal evaporator for Al deposition.

4：Experimental Procedures and Operational Workflow:

Clean substrates, treat with piranha solution if needed, immerse in TA and Fe (III) solution at pH=8.0 for film growth, repeat cycles for thickness control, dry in vacuum oven, deposit Al electrodes, measure film properties and device performance.

5：0 for film growth, repeat cycles for thickness control, dry in vacuum oven, deposit Al electrodes, measure film properties and device performance. Data Analysis Methods:

5. Data Analysis Methods: Use AFM for surface roughness, SEM for elemental mapping, XPS for chemical analysis, UV-Vis for spectra, Keithley for I-V curves, statistical analysis for yield and threshold voltages.