研究目的
To achieve the selective growth of perfectly homogenous and high-quality InN nanorods on SiNx mask using hydride vapor phase epitaxy (HVPE) combined with selective area growth (SAG) approach.
研究成果
Perfect selective area growth of hexagonal and regularly arranged InN nanorods has been achieved by HVPE on patterned Ga-polar GaN/c-Al2O3 template masked with SiNx. The nanorods exhibit high crystalline quality, vertical alignment, and an emission peak at 0.77 eV corresponding to the near band edge of InN. The hollow structure in the lower part may be related to the growth mechanism. This work demonstrates the potential for integrating pure InN in future devices, leveraging the large surface-to-volume ratio of nanorods.
研究不足
The formation of voids in the lower part of the nanorods is not fully understood and requires further experimental investigations. The growth mechanism related to void formation needs comprehensive explanation. The study is limited to specific growth conditions (temperature, V/III ratio) and mask type (SiNx), which may not be optimal for all applications.
1：Experimental Design and Method Selection:
The study employs hydride vapor phase epitaxy (HVPE) with selective area growth (SAG) on a SiNx masked Ga-polar GaN/c-Al2O3 template. The growth temperature and V/III ratio are adjusted to achieve perfect selectivity and high structural uniformity.
2：Sample Selection and Data Sources:
The substrate is a Ga-polar GaN/c-Al2O3 wafer masked with SiNx layer deposited by chemical vapor deposition (CVD), patterned with circular openings (200 nm diameter, 2 μm pitch) using nano-imprint lithography (NIL).
3：List of Experimental Equipment and Materials:
A horizontal home-made hot-wall HVPE reactor at atmospheric pressure, indium tri-chloride (InCl3) powder, ammonia (NH3), ultra-high purity nitrogen carrier gas, SiNx mask, GaN/c-Al2O3 template.
4：Experimental Procedures and Operational Workflow:
The substrate is introduced into the HVPE reactor with source zone at 490°C for InCl3 sublimation, mixing zone at higher temperature to hinder parasitical nucleation, and growth zone at 640°C. Partial pressures are NH3 at
5：3 x 10^-1 atm and InCl3 at 1 x 10^-3 atm, with growth time of 30 min. Data Analysis Methods:
Morphology studied with SEM, phase and orientation with XRD, selectivity and indium distribution with XRF mapping, crystal structure with TEM, polarity with KOH etching, and optical properties with PL measurements.
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