1：Experimental Design and Method Selection:

The study involved fabricating hierarchical nano-microtextured Si surfaces using a metal-assisted chemical etching process with Ag nanoparticles. The process included deposition of Ag thin films, annealing to form nanodots, and chemical etching with HF and H2O2 solutions. Theoretical models included quantum mechanics of photon modes in vacuum and Casimir-Lifshitz theory for surface interactions.

2：Sample Selection and Data Sources:

p-type boron-doped single crystalline flat Si(100) wafers (6 sq.-in., 156×156 mm2, specific resistance 0.5～3 Ω-cm, thickness 180 ± 5 μm) were used. Data were obtained from structural, optical, and electrical characterizations.

3：5～3 Ω-cm, thickness 180 ± 5 μm) were used. Data were obtained from structural, optical, and electrical characterizations. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: Equipment included FE-SEM, PL and PR analyzers, STM, FTIR spectrometer (VERTEX 80v, Bruker Optics), AFM (AFSEM?, Nanosurf), electron-beam evaporator, rapid thermal-annealing system. Materials included KOH, IPA, HF, H2O2, HNO3, Ag thin films, DI water.

4：Experimental Procedures and Operational Workflow:

Steps included ultrasonic pre-cleaning, saw damage removal, microtexturing with KOH:IPA solution, oxide etching with HF, pn junction formation via POCl3 diffusion, Ag deposition and annealing, nanotexturing with HF-H2O2 etching, residual Ag removal with HNO3, and characterization with FE-SEM, PL, PR, STM, AFM, and FTIR.

5：Data Analysis Methods:

Data were analyzed using simulations (e.g., COMSOL for electric field analysis), theoretical calculations of quantum states and contact angles, and spectral analysis of PR, PL, and FTIR measurements.