1：Experimental Design and Method Selection:

Silicon films were prepared using Hot-wire chemical vapour deposition (HWCVD) technique by varying process pressure (10-100 Pa) with a mixture of hydrogen diluted silane (10% silane in hydrogen) and methane as precursors. The overall design rationale was to study the effect of chamber pressure on film properties. Theoretical models included gas phase reactions and surface diffusion mechanisms.

2：Sample Selection and Data Sources:

Films were deposited on alkali free borosilicate glass (Corning 1737) substrates. Selection criteria included fixed substrate temperature (300 °C), filament temperature (2000 °C), deposition time (15 min), and gas flow rate ratio (silane to methane at 10:1). Data sources included structural, optical, and electrical measurements.

3：1). Data sources included structural, optical, and electrical measurements. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: HWCVD system with horizontal filament assembly, tungsten wire (0.5 mm diameter), alkali free borosilicate glass (Corning 1737), hydrogen diluted silane (10% silane in hydrogen), pure methane, X-ray Diffractometer (Bruker D8 Advance), Raman spectrometer (Horiba Jobin Vyon Lab RAM HR), Field emission scanning electron microscope (Carl Zessis Sigma), UV-Vis-NIR spectrophotometer (Perkin Elmer Lambda 950), silver paint electrodes.

4：5 mm diameter), alkali free borosilicate glass (Corning 1737), hydrogen diluted silane (10% silane in hydrogen), pure methane, X-ray Diffractometer (Bruker D8 Advance), Raman spectrometer (Horiba Jobin Vyon Lab RAM HR), Field emission scanning electron microscope (Carl Zessis Sigma), UV-Vis-NIR spectrophotometer (Perkin Elmer Lambda 950), silver paint electrodes. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Chamber evacuated to ~0.001 Pa prior to deposition. Films deposited by varying pressure (10-100 Pa) with fixed parameters. Three tungsten wires used in parallel, separated by 1 cm, with filament-substrate distance of 4 cm. Structural studies done by XRD and Raman spectroscopy, morphologies by FESEM, thickness and band gap by UV-Vis-NIR transmission spectra using Swanepoel method, conductivity by two-probe method with silver paint electrodes in coplanar geometry.

5：001 Pa prior to deposition. Films deposited by varying pressure (10-100 Pa) with fixed parameters. Three tungsten wires used in parallel, separated by 1 cm, with filament-substrate distance of 4 cm. Structural studies done by XRD and Raman spectroscopy, morphologies by FESEM, thickness and band gap by UV-Vis-NIR transmission spectra using Swanepoel method, conductivity by two-probe method with silver paint electrodes in coplanar geometry. Data Analysis Methods:

5. Data Analysis Methods: Raman spectra deconvoluted to calculate bond angle deviation (ΔθB), medium range order (MRO), crystallite size, total crystalline fraction, and nano-crystalline fraction. XRD patterns analyzed for crystallinity and phase identification. Thickness and band gap calculated from UV-Vis-NIR transmission spectra using Swanepoel method. Conductivity measured and analyzed for dark and photoconductivity.