params：

{"currentPage":1,"language":"zh-CN","listQuery":{"year":"","subject":"","application":"","applicationId":"","author":"","key":"keywords","keywords":"%E7%BB%93%E6%9E%84%20%20"}}

{"year":[{"label":"2019","value":2019,"isSelected":false},{"label":"2018","value":2018,"isSelected":false}],"keywords":[{"label":"B2. 半导体III-V族材料 \nA3. 金属有机化学气相沉积 \nB1. 氮化物 \nA1. 晶体结构 \nA1. 杂质","value":"B2. 半导体III-V族材料 \nA3. 金属有机化学气相沉积 \nB1. 氮化物 \nA1. 晶体结构 \nA1. 杂质","isSelected":false},{"label":"A2. 垂直布里奇曼技术 \nA1. 晶体结构 \nB3. 非线性光学 \nB1. 有机化合物 \nB2. 非线性光学材料","value":"A2. 垂直布里奇曼技术 \nA1. 晶体结构 \nB3. 非线性光学 \nB1. 有机化合物 \nB2. 非线性光学材料","isSelected":false},{"label":"A3. 金属有机气相外延 \nB2. 半导体III-V族材料 \nA1. 纳米结构 \nB2. 半导体磷化铟","value":"A3. 金属有机气相外延 \nB2. 半导体III-V族材料 \nA1. 纳米结构 \nB2. 半导体磷化铟","isSelected":false}],"application":[{"label":"材料科学与工程","value":"344380273586212956","isSelected":false},{"label":"材料物理","value":"344380273586212957","isSelected":false},{"label":"纳米材料与技术","value":"344380273586212968","isSelected":false}],"authors":[{"label":"Sophia University","value":"Sophia University","isSelected":false},{"label":"National Institute of Advanced Industrial Science and Technology (AIST)","value":"National Institute of Advanced Industrial Science and Technology (AIST)","isSelected":false},{"label":"SSN College of Engineering","value":"SSN College of Engineering","isSelected":false},{"label":"Nagoya University","value":"Nagoya University","isSelected":false},{"label":"Vellore Institute of Technology","value":"Vellore Institute of Technology","isSelected":false}]}

{"total":0,"list":[]}