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MOCVD Heteroepitaxial β‐Ga <sub/>2</sub> O <sub/>3</sub> and Black Phosphorus Pn Heterojunction for Solar‐Blind Ultraviolet and Infrared Dual‐Band Photodetector
摘要： MOCVD heteroepitaxial β-Ga2O3 and BP pn heterojunction for solar-blind UV and IR dual-band photodetector is proposed and demonstrated for the first time. The device demonstrates a remarkable photoresponse under UV and IR irradiations with a responsivity of 88.5 mA/W and 1.24 mA/W, respectively, an obvious pn heterojunction characteristics, as well as an excellent photoswitch periodicity. Moreover, under different irradiation conditions, the photoelectric properties of β-Ga2O3/BP pn heterojunction, including their photogeneration and photoresponse, are investigated in detail. These results signify that β-Ga2O3/BP pn heterojunction may find potential applications in future UV/IR dual-band detection systems.
关键词： black phosphorus,β-Ga2O3,heterojunctions,UV/IR,photodetector
更新于2025-09-12 10:27:22
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-Ga2O3 substrate enabled by self-assembled SiO2 nanospheres
摘要： To obtain high-quality GaN epitaxial ?lm on (?2 0 1) β-Ga2O3 substrate, periodic SiO2 nanosphere monolayer was self-assembled followed by inductively coupled plasma (ICP) etching. This periodic SiO2 nanosphere patterned Ga2O3 substrate (SiO2-NPGS) enables nanoscale epitaxial lateral overgrowth (NELOG) of GaN ?lm. Compared to planar Ga2O3 substrate, SiO2-NPGS shows great potential for epitaxial GaN with (0 0 0 2) and (1 0 ?1 2) full-width at half-maximum (FWHM) reduced from 555 to 388 arcsec, and 634 to 356 arcsec, respectively. Raman spectra also con?rm that the as-grown GaN ?lm on SiO2-NPGS is almost stress-free. The dislocation reduction is also observed by cross-sectional transmission electron microscope (TEM). The embedded SiO2-nanosphere blocks the dislocations and induces the GaN lateral overgrowth, thus leading to the signi?cant reduction of the threading dislocation densities. These ?ndings provide a new way for high quality stress-free GaN ?lm epitaxial growth on Ga2O3 substrate.
关键词： A3 Metal organic chemical vapor deposition,B1 SiO2 nanosphere,B1 Ga2O3,B1 GaN,A1 Nanoscale epitaxial lateral overgrowth
更新于2025-09-12 10:27:22
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Demonstration of low loss <b> <i>β</i> </b> -Ga <sub/>2</sub> O <sub/>3</sub> optical waveguides in the UV–NIR spectra
摘要： In this paper, we report the fabrication of low loss beta-phase gallium oxide (b-Ga2O3) optical waveguides and the propagation loss analysis of the waveguides in the ultraviolet (UV) to near infrared (NIR) spectral region. The b-Ga2O3 thin films were grown on sapphire substrates using metal organic chemical vapor deposition and were fabricated into various waveguide structures using nanofabrication processes. A low propagation loss of 3.7 dB/cm was obtained on the b-Ga2O3 waveguide at the wavelength of 810 nm, which is comparable to the state of the art. Combined with theoretical simulations, various loss mechanisms from two-photon absorption, sidewall scattering, top surface scattering, and bulk scattering were discussed for b-Ga2O3 waveguides, and their contributions to the total optical loss were estimated. These results show that b-Ga2O3 is a promising optical material for the fabrication of various integrated photonic devices in the UV–NIR spectra region.
关键词： integrated photonic devices,b-Ga2O3,propagation loss,UV–NIR spectra,optical waveguides
更新于2025-09-12 10:27:22
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Fabricating GaN-based LEDs on (?2 0 1) <i>β</i> -Ga <sub/>2</sub> O <sub/>3</sub> substrate via non-continuous/continuous growth between low-temperature undoped-GaN and high-temperature undoped-GaN in atmospheric pressure metal-organic chemical vapor deposition
摘要： This study demonstrates two approaches to the growth of GaN-based LEDs on (?2 0 1)-oriented β-Ga2O3 single crystal substrates using metal-organic CVD under atmospheric pressure. One approach induces non-continuous growth between low-temperature undoped-GaN (u-GaN) and high-temperature u-GaN, whereas the other approach induces continuous growth. We observed the following reduction in the FWHM of X-ray diffraction rocking curves: GaN (0 0 2) on (?2 0 1) β-Ga2O3 substrate (from 464 to 342 arcsec) and GaN (1 0 2) (from 886 to 493 arcsec). An LED with six pairs of InGaN/GaN multiple quantum wells was successfully fabricated on the (?2 0 1) β-Ga2O3 single crystal substrate.
关键词： metal-organic chemical vapor deposition,X-ray diffraction,β-Ga2O3 substrate,non-continuous/continuous growth,GaN-based LEDs
更新于2025-09-11 14:15:04
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3D Solar‐Blind Ga <sub/>2</sub> O <sub/>3</sub> Photodetector Array Realized Via Origami Method
摘要： A 3D solar-blind photodetector array is realized from amorphous Ga2O3 films grown on polyethylene terephthalate substrates via an origami route. The photodetector cells exhibit a dark current of 0.17 nA, and the peak responsivity is about 8.9 A W?1 at 250 nm with a quantum efficiency of 4450%. The photodetector shows a distinct cut-off wavelength at 268 nm with a solar-blind ratio of more than two orders of magnitude (photocurrent ratio between 250 nm/300 nm). The photodetector cells reveal excellent electrical stability after thousands of bending cycles. All the photodetector cells of the 3D photodetector array have a highly consistent performance. In addition, the device can execute the functions of capturing a real-time light trajectory and identifying multipoint light spatial distribution, which cannot be achieved in all the previously reported 2D solar-blind photodetectors. The results suggest new pathways to fabricate 3D photodetectors from conventional semiconductor films, which may find potential applications in optical positioning, tracking, imaging and communications, etc.
关键词： 3D photodetector,solar-blind photodetector,amorphous Ga2O3,origami
更新于2025-09-11 14:15:04
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Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga <sub/>2</sub> O <sub/>3</sub> Nanowires for DUV Photodetector and Image Sensor Application
摘要： Photodetection in the solar-blind deep-ultraviolet (DUV) regime (200–280 nm) has received significant attention for its many critical applications in military and civil areas. In this study, a vapor–solid synthesis technique for catalyst-free growth of single-crystalline β-Ga2O3 nanowires is developed. A photodetector made of the nanowires is highly sensitive to 265 nm DUV illumination with excellent photoresponse performance. The performance parameters including Ilight/Idark ratio, responsivity, specific detectivity and response speed can attain ≈103, ≈233 A W?1, ≈8.16 × 1012 Jones, and 0.48/0.04 s, respectively. Additionally, the detector has an abrupt response cutoff wavelength at ≈290 nm with a reasonable DUV/visible (250–405 nm) rejection ratio exceeding 102. It is also found that the device can operate properly at a large applied bias of 200 V with the responsivity being enhanced to as high as ≈1680 A W?1. Moreover, such a nanowires-based photodetector can function as a DUV light image sensor with a reasonable spatial resolution. Holding the above advantages, the present DUV photodetector based on catalyst-free grown β-Ga2O3 nanowires possesses huge possibility for application in future DUV optoelectronics.
关键词： DUV photodetectors,catalyst-free growth,nanowires,image sensors,β-Ga2O3
更新于2025-09-11 14:15:04
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High-Temperature β-Ga$_2$O$_3$ Schottky Diodes and UVC Photodetectors using RuOx Contacts
摘要： High-temperature β-Ga2O3 Schottky diodes with very low leakage currents, capable of sensitive UVC detection at 350 oC, were fabricated on 201 β-Ga2O3 single crystal substrates using intentionally-oxidized ruthenium (RuOx) Schottky contacts (SCs), with x = ~2.1. These RuOx:β-Ga2O3 SCs were characterized by rectification ratios of more than 1010 at ± 3 V and very low reverse leakage current densities of less than 1 nAcm-2 (~1 pA) at ?3.0 V, that were unchanged from 24 to 350 oC. These very low high-temperature leakage currents were due to their extremely high Schottky barriers of 2.2 eV at 350 oC, that were stable against repeated operation at this temperature. Although not optimized for photodetection, these SCs could detect UVC (λ = 248 nm) radiation at a temperature of 350 oC with a UVC/dark current ratio of ~103. The very high and thermally stable rectifying barriers of these RuOx:β-Ga2O3 SCs makes them strong candidates for use in high temperature β-Ga2O3 rectifying diodes and UVC photodetectors.
关键词： High Temperature Devices,Schottky Contacts,RuO2,Ga2O3,Ruthenium Dioxide,UV Photodetectors
更新于2025-09-11 14:15:04
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Dynamics Contributions to the Growth Mechanism of Ga2O3 Thin Film and NWs Enabled by Ag Catalyst
摘要： In the last few years, interest in the use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 has an enormous band gap of 4.8 eV, which makes it well suited for applications in harsh environments. In this work, we explored the effect of Ag thin film as a catalyst to grow gallium oxide. The growth of gallium oxide thin film and nanowires can be achieved by heating and oxidizing pure gallium at high temperatures (~1000 °C) in the presence of trace amounts of oxygen. We present the results of structural, morphological, and elemental characterization of the β-Ga2O3 thin film and nanowires. In addition, we explore and compare the sensing properties of the β-Ga2O3 thin film and nanowires for UV detection. The proposed process can be optimized to a high scale production Ga2O3 nanocrystalline thin film and nanowires. By using Ag thin film as a catalyst, we can control the growth parameters to obtain either nanocrystalline thin film or nanowires.
关键词： Ga2O3,thermal oxidation,nanowires,thin film,silver catalyst,quartz
更新于2025-09-11 14:15:04
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Photoelectrochemical Self-Powered Solar-Blind Photodetectors Based on Ga2O3 Nanorod Array/Electrolyte Solid/Liquid Heterojunctions with a Large Seperation Interface of Photogenerated Carriers
摘要： Solar-blind photodetectors have been widely developed because of their great potential application in biological analysis, ultraviolet communication, and so on. Photodetectors constructed by vertically aligned nanorod arrays (NRAs), have attracted intensive interest recently owing to the virtues of low light reflectivity and rapid electron transport. However, limited by the insufficient contact between the upper electrode and NRAs because of uneven NRAs, photo-generated carriers cannot be effectively separated and transferred. In this work, a novel photoelectrochemical (PEC) type self-powered solar-blind photodetectors constructed in the form of Ga2O3 NRAs/electrolyte solid/liquid heterojunction with a large photogenerated carrier separation interface has been fabricated, β-Ga2O3 NRAs PEC photodetector shows a photoresponsivity of 3.81 mA/W at a bias voltage of 0 V under the 254 nm light illumination with the light intensity of 2.8 mW/cm2, thus yielding a Iphoto/Idark ratio of 28.97 and an external quantum efficiency of 1.86 %. Our results provide a novel device structure of solar-blind photodetector with high efficient deep-ultraviolet photodetection and low power consumption.
关键词： photoelectrochemical,Ga2O3 NRAs,solid-liquid heterojunction,solar-blind photodetectors,self-powered
更新于2025-09-11 14:15:04
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Epitaxial β-Ga2O3 and β-(AlxGa1-x)2O3/β-Ga2O3 Heterostructures Growth for Power Electronics
摘要： We report growth of high quality β-Ga2O3 ?lms using metal organic chemical vapor deposition (MOCVD). Ga(DPM)3, TEGa, and TMGa metal organic precursors were used as Ga sources and oxygen for oxidation. Films grown from each Ga sources had high growth rates with up to 10 μm/h achieved using TMGa. To study the quality homoepitaxial layers, MOCVD was used to grow unintentionally doped (UID) and Si doped β-Ga2O3 layers with a growth rate between 0.5 and 4.0 μm/h Epitaxial layers with XRD FWHM and RMS roughness < 50 arcsec and < 0.5 nm, respectively, were demonstrated. The electron mobility increased from ～13 cm2/Vs for n = 8×1019 1/cm3 to ～120 cm2/Vs for n = 1.6×1017 1/cm3. These values are comparable with the best literature data, despite higher growth rates. For the UID β-Ga2O3 layers, Si was identi?ed as the major impurity responsible for the free carrier concentration with strong accumulation at the ?lm/substrate interface. The reactor was also used to grow high quality strained β-(AlxGa1?x)2O3/β-Ga2O3 heterostructures and superlattices with Al content of up to 43%. The results suggest that the MOCVD enables growth of device quality β-Ga2O3 and related alloys at a fast growth rate which is critical for high voltage power devices.
关键词： electron mobility,β-Ga2O3,MOCVD,β-(Alx, Ga1?x)2O3,growth rates
更新于2025-09-11 14:15:04