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Finite Element Analysis to the Constitutive Behavior of Sintered Silver Nanoparticles Under Nanoindentation
摘要： Finite element (FE) simulation is adopted as a fundamental tool to evaluate the mechanical reliability of packaging structures for electronic devices. Nevertheless, the determination of mechanical properties of sintered silver nanoparticles (AgNP) remains challenging as the traditional tensile test is difficult to be performed at a limited size. In the current study, spherical nanoindentation is utilized to measure the applied load-penetration depth responses of sintered AgNP reinforced by SiC microparticles at various weight ratios (0.0, 0.5, 1.0 and 1.5 wt.%). To describe the elasto-plastic behavior of this heterogeneous material, FE analysis is performed to simulate the indentation behavior and determine the parameters in the modified power-law model by fitting the average applied load-penetration depth responses. To overcome the uniqueness problem, the Young’s modulus is directly determined by continuous stiffness measurement technique and the proposed constitutive model can provide a reasonably accurate mechanical estimation of sintered AgNP. The effect of SiC content on sintered AgNP is discussed by correlating the morphology observed by scanning electron microscope (SEM) and the constitutive parameters obtained from the FE simulations.
关键词： nanoindentation,finite element analysis.,constitutive model,SiC microparticle,Sintered silver nanoparticle
更新于2025-09-23 15:23:52
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Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs
摘要： The behavior of silicon carbide power MOSFETs is analyzed using TCAD device simulations with respect to conduction and switching losses. Device designs with varying breakdown voltages are simulated. The contributions to the on-state resistance are shown at room and elevated temperature. Whereas channel and substrate resistance dominate at low breakdown voltages, drift and JFET resistance dominate at high breakdown voltages. With increasing temperature, the channel resistance decreases and thus the drift resistance is the main contributor already at medium breakdown voltages. Manufacturing processes of a device can have a high influence on its losses. Variations in interface mobility, drift doping, and p-body doping can lead to a significant change of on-resistance, internal capacitances, and reverse recovery charge. For higher voltage classes the drift layer properties should be of major interest as it influences on-resistance and reverse recovery charge.
关键词： SiC power MOSFET,TCAD device simulation,sensitivity analysis,losses
更新于2025-09-23 15:23:52
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Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-Ge intercalation
摘要： In order to modulate the transfer doping of quasi-free-standing monolayer graphene (QFMLG) formed on SiC(0001), Ge atoms were intercalated additionally into QFMLG already formed by Sn intercalation between ZL and 6H-SiC(0001). By postannealing the Ge-deposited surface at 600 °C, the Sn1-xGex film with the 4 × √3 structure, composed of a bilayer and adatoms with dangling bonds under QFMLG, has been formed. It turns out that, in this Sn1-xGex film, Ge atoms preferentially occupy the bottom layer bound to the top Si atoms of the substrate, while Sn atoms occupy the top adatom sites. Strong correlation among the electrons localized at these adatom sites induces a semiconducting alloy film. As the postannealing temperature is increased up to 800 °C, the concentration of Ge in the intercalated film of the same 4 × √3 structure is gradually increased and the Dirac point also shifts gradually from ?0.16 eV to +0.20 eV relative to the Fermi level. Such a result confirms that the transfer doping of QFMLG on SiC(0001) has been modulated by varying the alloy composition of the Sn1-xGex interfacial film.
关键词： Scanning tunneling microscopy,Quasi-free-standing graphene,SnGe alloy intercalation,Hubbard band,Doping modulation,Photoemission spectroscopy,SiC(0001)
更新于2025-09-23 15:23:52
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Interface Trap Effects in the Design of a 4H-SiC MOSFET for Low Voltage Applications
摘要： The current-voltage characteristics of a 4H-SiC MOSFET dimensioned for a breakdown voltage of 650 V are investigated by means of a numerical simulation study that takes into account the defect state distribution at the oxide-semiconductor interface in the channel region. The modelling analysis reveals that, for these low-voltage devices, the channel resistance component plays a key role in determining the MOSFET specific ON-state resistance (RON) under different voltage biases and temperatures. The RON value is in the order of a few mΩ×cm2.
关键词： numerical simulations,power devices,ON-state resistance,4H-SiC,defects states
更新于2025-09-23 15:23:52
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Thermal Influence on S22 kink behavior of a 0.15-μm gate length AlGaN/GaN/SiC HEMT for microwave applications
摘要： Thermal influence on S22 kink behavior has been carried out on a 0.15-μm gate length AlGaN/GaN/SiC high electron mobility transistor over a wide range of temperature. The size and the shape of the S22 kink effect in terms of biasing and temperature have been evaluated. The main finding is that S22 of the studied device is affected by two kinks: the first one appears at approximately 19 GHz and then the second one appears at about 43 GHz. The impact of the intrinsic circuit parameters on the S22 kink phenomena is inspected to assess their contribution. In addition, a new procedure is proposed to quantify this type of phenomenon by defining the kink area as the area between the two curves corresponding to S22 with and without the kink effect. The relevance of this study emerges from the fact that an exhaustive characterization of these anomalous phenomena can empower RF engineers to effectively take them into account for both modeling and design purposes.
关键词： scattering parameter measurements,and temperature,0.15-μm gate length GaN on SiC HEMT,equivalent circuit,two S22 kinks
更新于2025-09-23 15:23:52
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In-situ synthesis of mullite-SiCw composite ceramics in Li2O-Al2O3-SiO2 ternary system for solar heat transmission pipeline
摘要： Nano-SiC whiskers (nano-SiCw) were in-situ synthesized in Li2O-Al2O3-SiO2 ternary system for preparing highly densified mullite-SiCw composite ceramics used for solar heat transmission pipeline. Mechanisms on the in-situ synthesis of nano-SiCw in the ternary system were investigated and the impact of nano-SiCw on the performances of the composites had been studied. Results showed that the growth processes of nano-SiC whiskers in Li2O-Al2O3-SiO2 ternary system were dominated by liquid-solid (LS) mechanism and the Li2CO3 additive could improve the SiCw yield through increasing the content of liquid phase and lowering the liquid viscosity. Sample BS3 (with 2.22 wt% Li2CO3 additive) sintered at 1440 °C obtained the highest SiC content of 47.9%. Nano-SiC whiskers with a diameter of 20e30 nm were interlocking with rod-like mullite crystals to improve the mechanical properties of the composites, and sample BS1 sintered at 1420 °C showed the highest bending strength of 115.4 MPa. The in-situ synthesized SiCw also shew significant effects on improving the thermophysical properties of the composites and sample BS1 exhibited a 3.6 times higher thermal conductivity than that of blank sample B1 without the introduction of nano-SiCw.
关键词： Li2O-Al2O3-SiO2 ternary system,Thermal conductivity,Mullite-SiCw composite ceramics,Solar heat transmission pipeline,SiC whiskers
更新于2025-09-23 15:23:52
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Advanced Silicon Carbide Devices and Processing || Investigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry
摘要： We have investigated SiC/oxide interface structures by the use of spectroscopic ellipsometry. The depth profile of the optical constants of thermally grown oxide layers on SiC was obtained by observing the slope-shaped oxide layers, and the results suggest the existence of the interface layers, around 1 nm in thickness, having high refractive index than those of both SiC and SiO2. The wavelength dispersions of optical constants of the interface layers were measured in the range of visible to deep UV spectral region, and we found the interface layers have similar dispersion to that of SiC, though the refractive indices are around 1 larger than SiC, which suggests the interface layers are neither transition layers nor roughness layers, but modified SiC, e.g., strained and/or modified composition. By the use of an in-situ ellipsometer, real-time observation of SiC oxidation was performed, and the growth rate enhancement was found in the thin thickness regime as in the case of Si oxidation, which cannot be explained by the Deal-Grove model proposed for Si oxidation. From the measurements of the oxidation temperature and oxygen partial pressure dependences of oxidation rate in the initial stage of oxidation, we have discussed the interface structures and their formation mechanisms within the framework of the interfacial Si-C emission model we proposed for SiC oxidation mechanism.
关键词： interface state density,SiC-MOSFET,SiC/oxide interface,SiC oxidation mechanism,spectroscopic ellipsometry
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode
摘要： The superior performance of the SiC MOSFETs operating in synchronous mode converter without external antiparallel SiC Schottky diodes have been demonstrated recently. However, there are few studies of the surge current capability of the SiC MOSFET's body diode, leading severe concern for its ruggedness in practical power converter applications. The purpose of this paper is to experimentally compare the non-repetitive surge current capability of the SiC MOSFET's intrinsic body diode and SiC Schottky diode, and analyze the physical mechanisms of their degradation after surge current stress. Their surge current capability and electrical characteristics before and after surge current stress are measured and analyzed. Experimental study shows that the non-repetitive peak surge current of the SiC MOSFET’s body diode is slightly larger than that of the SiC Schottky diodes. The degradation of the SiC Schottky diode after surge current stress is accompanied with the increase of drain leakage current, while the degradation of the SiC MOSFET after the body diode’s surge current stress is accompanied with the variation of the threshold voltage and input capacitance of the SiC MOSFET. The analysis shows that the degradation of the SiC MOSFET after the surge current stress may be correlated with the interface traps of SiC/SiO2 interface.
关键词： Body diode,SiC Schottky Diode,SiC MOSFET,Surge current
更新于2025-09-23 15:22:29
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Novel Three-Dimensional SiC/Melamine-Derived Carbon Foam-Reinforced SiO <sub/>2</sub> Aerogel Composite with Low Dielectric Loss and High Impedance Matching Ratio
摘要： Novel three-dimensional SiC/melamine-derived carbon foam composite filled by silica aerogel (SiC/MDCF?Aerogel) was first fabricated by the pyrolysis process of commercial melamine foam, chemical vapor deposition of ultrathin SiC films, and the sol?gel method of silica aerogel. The results indicated that the SiC/MDCF?Aerogel composite consisted of the SiC three-dimensional open-celled network structure and the pregnant silica aerogel in the pores. Tiny cracks on the interface of skeletons and clumps were induced during the aging process, which was drastically beneficial to the microwave-absorbing properties. A minimum reflection loss could be obtained as low as ?18.41 dB at the measured frequency of 16.92 GHz when the thickness of the absorber was 3.65 mm, and the reflection loss could drop below ?10 dB when the selected frequencies ranged from 15.80 to 17.52 GHz, along with the thickness ranging from 2.75 to 5.0 mm, which possessed a relatively better microwave absorption performance especially at a higher frequency. Furthermore, the absorption mechanism was also investigated in detail to discuss the influence of the dielectric loss and the impedance matching ratio on the microwave-absorbing performance of SiC/MDCF?Aerogel, which provided certain scientific directions for evaluating the absorbing materials.
关键词： Minimum reflection loss,Tiny cracks,Microwave-absorbing properties,Impedance matching ratio,Dielectric loss,SiC/MDCF?Aerogel
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Dependence of Characteristics of Directly-Bonded SiC/Si Junctions on Bonding Temperature
摘要： We measure electrical characteristics and die shear strength of directly-bonded n-4H-SiC/p+-Si junction with emphasis on their dependence on the annealing condition during bonding. In the bonding process, we perform lower-temperature annealing at the first step and higher-temperature one at the second step. By increasing annealing temperature at the first step, the impurity concentration obtained by C-V measurement gets close to the impurity concentration of SiC and the bonding strength become larger. These results show that directly-bonded SiC/Si junction characteristics depend on the annealing temperature at the first (lower-temperature) step in the bonding process.
关键词： direct bonding,surface treatment,Si,SiC,annealing
更新于2025-09-23 15:22:29