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Identification and characterization of a core set of <scp>ROS</scp> wave‐associated transcripts involved in the systemic acquired acclimation response of Arabidopsis to excess light
摘要： Systemic acquired acclimation (SAA) plays a key role in optimizing growth and preventing damages associated with fluctuating or abrupt changes in the plant environment. To be effective, SAA has to occur at a rapid rate and depend on rapid signaling pathways that transmit signals from affected tissues to all parts of the plant. Although recent studies identified several different rapid systemic signaling pathways that could mediate SAA, very little is known about the extent of their involvement in mediating transcriptomic responses. Here we reveal that the systemic transcriptomic response of plants to excess light stress is extensive in its context and involves an early (2 minute) and transient stage of transcript expression that includes thousands of genes. This early response is dependent on the respiratory burst oxidase homolog D protein, and the function of the reactive oxygen species (ROS) wave. We further identify a core set of transcripts associated with the ROS wave and suggest that some of these transcripts are involved in linking ROS with calcium signaling. Priming of a systemic leaf to become acclimated to a particular stress during SAA involves thousands of transcripts that display a rapid and transient expression pattern driven by the ROS wave.
关键词： Arabidopsis thaliana,H2O2 signaling,systemic signaling,Reactive oxygen species (ROS) wave,Transcriptomics,light stress,MYB30,systemic acquired acclimation (SAA),WRKY
更新于2025-09-09 09:28:46
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Dependent Analyses of Multilayered Material/Geometrical Characteristics on the Mechanical Reliability of Flexible Display Devices
摘要： A generalized solution for the bending stress/strain expression of flexible display composed of multi-stacked thin films is presented in this letter. Flexible display comprises an arbitrary number of films combined with dissimilar thicknesses and linear-elastic mechanical characteristics. Specific consequences for alternate layered systems are estimated to reveal the elementary trends of the dependencies of normalized bending strain and neutral axis (N.A.) position on the modulus and thickness ratios of the concerned layers. An actual architecture of flexible display is also provided as an example to calculate the results and is compared with the simulated predictions of finite element analysis. With various material selections of cover plate, the induced stresses on transparent conducting film and the position of the N.A. plate are separately investigated. Moreover, the impact of bending radius on the mechanical reliability of flexible encapsulation is also found. The presented results serve as a design guideline for the infrastructure optimization of flexible display devices without electrical failures.
关键词： Flexible display,bending stress,multi-layered architecture,analytical solutions
更新于2025-09-09 09:28:46
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Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistors
摘要： We investigated how the zero-voltage duration (0Vd) affects the tendency of degradation during pulsed gate bias stress in a-InGaZnO thin film transistors (TFTs). DC or pulsed negative bias illumination stress (NBIS) or positive bias stress (PBS) was applied to the TFTs for effective stress time of 4,000 s. While pulsed bias stress was being applied, stress-voltage duration (SVd) was set as either 10 s or 1 s per cycle, and 0Vd was varied from 100% to 1% of the SVd. During NBIS, degradation in both threshold voltage and sub-threshold slope became increasingly severe as 0Vd was shortened. However, during pulsed PBS, these trends were almost absent. These different tendencies may occur because the cause of each stress-induced degradation is fundamentally dissimilar; NBIS involves ionization of oxygen vacancies, whereas PBS involves electron trapping. The proposed mechanism was supported by additional bias stress tests on TFTs that had been immersed in H2O, where hydrogen became dominant factor causing the degradation.
关键词： Hydrogen,IGZO,Dynamic stress,Instability,Oxygen vacancy,AC stress
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE Industry Applications Society Annual Meeting (IAS) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Industry Applications Society Annual Meeting (IAS) - Effect of thermal and electrical stress on photometric, radiometric, and colorimetric characteristics of large area white organic light emitting diodes
摘要： The aim of this paper is to identify the photometric, radiometric, and colorimetric signatures of degradations of large area white organic light emitting diodes (Philips GL55, 41cm2 active area), subjected to various stress conditions. Nine devices have been stressed at a constant current density of 11.25mA/cm2, 13mA/cm2 and 15mA/cm2 at 23°C (room temperature), 40°C and 60°C. We have also stocked three devices under purely thermal stress at the same temperatures. Thus, we can make comparison between electrical-thermal stress and purely thermal stress. Over aging time, an increase of both the correlated color temperature and the general rendering index was observed. The degradation rate of the blue emitter is more significant than the other emitters, which induced a color shift toward a green-yellow.
关键词： OLED,thermal stress,colorimetric characterization,electrical stress,degradation signature,aging
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - San Diego, CA, USA (2018.10.15-2018.10.17)] 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit Design
摘要： This paper presents and validates a physics-based compact aging model for predictive simulation of hot-carrier degradation in SiGe HBTs. Separate aging functions model the effects of high-field mixed-mode and high-current Auger-hot-carrier stresses and are integrated together to provide predictive capability across a wide bias range. The variation of aging rate with device geometry and the incorporation of multiple parameter shifts due to hot carrier polysilicon degradation are explored. Additionally, aging simulation results of a driver circuit are presented to begin to demonstrate how such models may be incorporated as part of the circuit design process.
关键词： SiGe HBT,safe operating area,mixed-mode stress,high-current stress,reliability
更新于2025-09-04 15:30:14
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7.5: Reduction of Visual Fatigue caused by Surface Reflection of Displays
摘要： Previous report on ergonomics experiment has verified that task under ambient vision stress illumination can be reduced effectively by introducing AG or AGAR to LCDs. In this paper, we analyzed the contrast of LCD of surface treatment of AG, AR and AGAR under ambient illumination. By using AGAR surface treatment, the contrast can be improved to higher than 10, a necessary minimum contrast for comfort reading. We believe this as one reason of the vision stress reduction of LCD of AGAR treatment.
关键词： anti-glare,ergonomic,Vision stress,legibility,anti-reflection,sparkle,surface treatment
更新于2025-09-04 15:30:14
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Reactive Species Detection in Biology || UV–Vis Absorption and Chemiluminescence Techniques
摘要： Spectrophotometric techniques involving ultraviolet and colorimetric detection offer a convenient way of detecting reactive species (RS) formation due to the prevalence of UV-Vis spectrophotometer in research laboratories. Conventional spectrophotometric measurement of RS exploits their unique chemical reactivity with a small organic molecule and/or enzyme that has specificity to these RS where formation (or disappearance) of absorption peak/s at a particular wavelength is observed at the UV to the visible region of the electromagnetic spectrum. Direct detection of O2 from xanthine oxidase in the past involves rapid-freeze technique using electron paramagnetic resonance (EPR) spectroscopy. At the same time, spectrophotometric detection of O2 generated from xanthine oxidase/xanthine system was also employed for the investigation of the enzymatic property of superoxide dismutase (SOD) where the O2 levels were measured through reduction of ferricytochrome c, tetranitromethane, or oxidation of epinephrine to adenochrome. Several approaches have been developed since then to improve sensitivity with the use of submicromolar probe concentration thus allowing minimal interferences of the probe on the biological process being investigated. Specificity has also been improved to increase the reaction rate of probes to certain RS through synthesis of new and innovative analogues that exploit the unique chemistry between the probe and RS. Chromophore stability was also achieved through improved molecular design, optimized experimental conditions, or addition of supramolecular reagents since chromophores impart inherent thermodynamic stability as a function of its chemical structure, solvent polarity, pH, temperature, or due to presence of oxido-reductants or other reactive substances. Improved sample preparation and high-throughput analysis were also developed in order to maximize efficiency in the measurement markers of oxidative stress and determination of antioxidant capacity (AOC) of known molecules, food, biological fluid, or tissue. Therefore, spectrophotometric techniques for RS measurement have found broad application in the fields of biomedical research, clinical chemistry, plant biology, food chemistry, environmental chemistry, radiation chemistry, pharmaceuticals, toxicology, or material science to name a few, or just simply for the investigation of RS production in simple chemical systems. However, unlike the fluorescence probes, spectrophotometric as well as most applications of chemiluminescence probes do not provide spectrospatial image of the RS localization in cells, hence, one cannot deduce the site of radical production unless multiple probes and/or inhibitors are used with varying compartmentalization property (i.e., extracellular or intracellular). For example, in the investigation of radical production in cellular NADPH oxidase, several methods had been suggested such as measurement of O2 consumption, use of SOD-ferricytochrome c and horseradish peroxidase (HRP)/inhibitable probe such as Amplex Red for extracellular O2 and H2O2, respectively, and the HPLC analysis of the 2-OH-E marker for the quantification of intracellular O2.
关键词： Clinical Chemistry,Oxidative Stress,Spectrophotometric Techniques,Environmental Chemistry,Reactive Species,Antioxidant Capacity,Biomedical Research,Chemiluminescence,Superoxide Dismutase,UV-Vis Absorption
更新于2025-09-04 15:30:14
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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - First and Second Order Piezoresistive Characteristics of CMOS FETs: Weak through Strong Inversion
摘要： Experimental results validate a continuous model describing the stress dependencies of CMOS FETs from weak through strong inversion. The model incorporates the significant impact of threshold voltage changes (through ni2) on the stress responses in all regions of operation and describes both first- and second-order longitudinal and traverse piezoresistive coefficients for PMOS and NMOS devices. Orthogonal differential pairs of MOSFETs can be utilized to directly measure the mobility component of the overall stress response.
关键词： threshold voltage,piezoresistive characteristics,CMOS FETs,stress dependencies,mobility variations
更新于2025-09-04 15:30:14
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Residual stress in underlying silicon at the fixed end of SiO <sub/>2</sub> microcantilevers?— A micro-Raman study
摘要： In this work, nature of the residual stress developed in the convex corners created in underlying Si at the fixed end of SiO2 microcantilevers (MCs) fabricated by wet chemical etching method was investigated using micro-Raman spectroscopy with visible excitation. It revealed the presence of tensile stress near the sharp edge of the convex corner and is attributed to the localized stress generated in the neighborhood of the discontinuities, acting as stress concentration region. Residual stress estimated by micro-Raman technique across the convex corner was also validated by FEM simulations. Micro-Raman also revealed the presence of tensile stress on the etched Si surface, which is explained on the basis of stress induced by native oxide shells covering the etched features.
关键词： SiO2 microcantilever,convex corner in Si,micro-Raman spectroscopy using visible excitation,residual stress
更新于2025-09-04 15:30:14
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The Effect of Microwave Annealing of Reliability Characteristics on Amorphous IGZO Thin Film Transistors
摘要： Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, ?exible, transmission, and uniformity. The thin ?lm transistors (TFTs) with a-IGZO thin ?lm as active layer perform higher ?eld-effect mobility (>10 cm2/V · S), larger I on/I off ratio (>106), smaller subthreshold swing and better stability against electrical stress. LaAlO3/ZrO2 is employed as gate electrode and gate dielectric layer for a-IGZO TFTs, under the premise that performance of a-IGZO TFTs without decreasing. Due to the good selectivity of energy transformation and rapid heating rate, microwave annealing is applied to improve the device reliability in the investigation. With adjusting the parameter of microwave annealing, the effect on reliability characteristics of a-IGZO TFTs is studied.
关键词： Microwave Annealing,Stretched-Exponential Model,IGZO TFTs,Positive Bias Stress
更新于2025-09-04 15:30:14