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Graphene as charge transport layers in lead free perovskite solar cell
摘要： Tin-based perovskite material is one of the promising candidates used in lead-free perovskite solar cells. In the present study, the use of graphene material as charge transport layers is suggested and the structure n-Graphene/CH3NH3SnI3/p-Graphene is simulated in AFORS-HET (Automat for Simulation of Heterostructures) software. The effect of layer properties on the performance of the proposed structure is analyzed. After optimizing the layer parameters, the best possible structure gives a Voc = 687.1 mV, Jsc = 19.93 mA cm?2, FF = 77.92% and efficiency = 10.67%. The textured nature of front surface enhances the efficiency of the cell from 10.67% to 13.28%. The effect of operating temperature is observed on the performance of the cell. The proposed structure is also modelled using one diode model in MATLAB software for comparison with AFORS-HET results. The results of the simulated and modelled structure are in good agreement with each other. To the best of our knowledge, the proposed structure and the corresponding results reported herein are new for the research community.
关键词： perovskite solar cell,graphene,AFORS-HET software,efficiency,MATLAB
更新于2025-09-23 15:19:57
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Numerical Simulation on Effects of TCO Work Function on Performance of a-Si:H Solar Cells
摘要： In this paper, we have investigated the effect of the work function of transparent conducting oxides (TCO) on the performance of a-Si:H p-i-n solar cells, including open circuit voltage (VOC), short circuit current (JSC), fill factor (FF) and conversion efficiency, using AFORS-HET software. The simulation has focused on two layers: front contact work function (ΦTCO-front) and back contact work function (ΦTCO-back) with various band energy gap from 4.7 eV to 5.3 eV and 4.2 eV to 4.9 eV respectively. From the simulation results, we know that the work function of TCO greatly affects the performance of solar cells such as Voc, Jsc, FF and conversion efficiency. By optimization, we arrive at results of Voc, Jsc, FF and conversion efficiencies of 0.88 V, 8.95 mA / cm2, 65% and 5.1% respectively, by using ΦTCO-front of 5.2 eV. When ΦTCO-front > 5.2 eV, the values of VOC, FF and conversion efficiency have been saturated, while the value of the J sc actually begins to decrease. Furthermore, when the ΦTCO - back is 4.3 eV, we get the best results for VOC, Jsc, FF and conversion Efficiency of 0.9 V, 8.96 mA / cm2, 73 % and 5.9 % respectively. When ΦTCO-back > 4.3 eV, the values of VOC, FF and conversion efficiency begin to decrease, while the value of the Jsc does not change significantly. These optimizations may help for producing low cost high efficiency p-i-n solar cells experimentally.
关键词： work function,AFORS-HET,numerical simulation,a-Si:H,p-i-n solar cell
更新于2025-09-16 10:30:52
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Simulation and analysis on device parameter variations of single junction hydrogenated amorphous silicon solar cell
摘要： A novel single junction amorphous silicon solar cell is investigated by numerical simulation tool AFORS-HET to understand the influence of various parameters such as bandgap, different layer thickness, doping concentrations of P and N layers, transparent conducting oxides as textured and plane surfaces with graded structures on efficiency of solar cell. The trade-off between input parameters were examined in terms of short circuit current density (Jsc), open circuit voltage (Voc), Fill Factor (FF) and efficiency (η) as a function of different structural variations for efficiency enhancement. The systematic approach from front to back layer is investigated and the output parameters are tabulated with varied layer configurations to get clear understanding on the relative improvements over the input parameter variations. Simulated results show that maximum of 8.04% and 11.03% efficiency is seen by graded and textured structures respectively compared to maximum 3.46% efficiency of standard p-i-n structure. A structure with combination of graded and textured layers could provide maximum efficiency up to 19.08% is presented.
关键词： Amorphous silicon,AFORS HET,a-Si:H parameters,P-I-N solar cell,Thin film,Photovoltaics
更新于2025-09-16 10:30:52
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Effect on the reduction of the barrier height in rear-emitter silicon heterojunction solar cells using Ar plasma-treated ITO film
摘要： In this study, we investigated the effect of plasma treatment on an indium tin oxide (ITO) film under an ambient Ar atmosphere. The sheet resistance of the plasma-treated ITO film at 250 W (37.6 ?/sq) was higher than that of the as-deposited ITO film (34 ?/sq). Plasma treatment was found to decrease the ITO grain size to 21.81 nm, in comparison with the as-deposited ITO (25.49 nm), which resulted in a decrease in the Hall mobility. The work function of the Ar-plasma-treated ITO (WFITO = 4.17 eV) was lower than that of the as-deposited ITO film (WFITO = 5.13 eV). This lower work function was attributed to vacancies that formed in the indium and oxygen vacancies in the bonding structure. Rear-emitter silicon heterojunction (SHJ) solar cells fabricated using the plasma-treated ITO film exhibited an open circuit voltage (VOC) of 734 mV, compared to SHJ cells fabricated using the as-deposited ITO film, which showed a VOC of 704 mV. The increase in VOC could be explained by the decrease in the work function, which is related to the reduction in the barrier height between the ITO and a-Si:H (n) of the rear-emitter SHJ solar cells. Furthermore, the performance of the plasma-treated ITO film was verified, with the front surface field layers, using an AFORS-HET simulation. The current density (JSC) and VOC increased to 39.44 mA/cm2 and 736.8 mV, respectively, while maintaining a WFITO of 3.8 eV. Meanwhile, the efficiency was 22.9% at VOC = 721.5 mV and JSC = 38.55 mA/cm2 for WFITO = 4.4 eV. However, an overall enhancement of 23.75% in the cell efficiency was achieved owing to the low work function value of the ITO film. Ar plasma treatment can be used in transparent conducting oxide applications to improve cell efficiency by controlling the barrier height.
关键词： Work function,Silicon heterojunction solar cell,Transparent conducting oxide,AFORS-HET,Plasma treatment,Indium Tin Oxide
更新于2025-09-16 10:30:52
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Computer modeling of the front surface field layer on the performance of the rear-emitter silicon heterojunction solar cell with 25 % efficiency
摘要： Highly conductive materials with wide band gaps are used as front surface field (FSF) layer to achieve a prominent efficiency in silicon heterojunction (SHJ) solar cells. In this study, we demonstrate an n-type hydrogenated microcrystalline silicon oxide (μc-SiO:H) layer with high conductivity and beneficial optical properties for its application in SHJ solar cells. To develop a substitute to a-Si:H (n), we started our research in the synthesis of HIT-type solar cells with three different layers, namely, a-Si:H (n), micro-crystalline silicon (μc-Si: H(n)), and μc-SiO:H (n). Owing to its better surface passivation, wide optical gap, and high conductivity, the μc-SiO:H (n) layer was employed as a substitute to a-Si:H (n). It is difficult to thoroughly investigate the effects of every parameter, such as the thickness, the electron affinity, and the doping density on the device performance experimentally. We, therefore, used a program based on the automat for simulation of heterostructures (AFORS-HET), to evaluate the limitation of the conversion efficiency, which provides a convenient way to accurately evaluate the role of various parameters. We obtained a high efficiency with open circuit voltage, (VOC) of 755.3 mV and a fill factor (FF) of 79.82% are essential factors owing to a favorable bending of the conduction band in the μc-SiO:H (n) next to the a-Si:H (i). We achieved a high efficiency of 25.35 % using a μc-SiO:H film with both an appropriate electron affinity of 4.1 eV and the doping density of 1019 cm-3.
关键词： AFORS-HET,Silicon heterojunction solar cell,Front surface field,High efficiency
更新于2025-09-12 10:27:22
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Performance of thin silicon solar cells with a quasi-monocrystalline porous silicon layer on the rear side
摘要： The present study employs porous silicon (PS) or quasi-monocrystalline porous silicon (QMPS) as a reflector material on the rear side. It presents an analytical model that simulates the performance of n+–p–p+ thin silicon solar cell with a QMPS layer on the rear side. The development of the model involves the formulation of a complete set of equations for the photo-current density that is then solved analytically in the base region, including the photocurrent generated under the effect of the light reflected by QMPS layer. This also takes the contribution of the back p+-region (back surface field) to the generated photocurrent into consideration. The enhancements brought by the thin film QMPS with regard to photovoltaic (PV) parameters are then investigated and compared to those brought by the conventional silicon solar cell. Moreover, the effect of the QMPS layer on the current–voltage characteristics J–V and the internal quantum efficiency (IQE) of thin silicon solar cells are simulated by means of AFORS-HET software. These simulations show that the improvement of the PV parameters is due to an increase in the transport parameters of minority carriers in the p-region.
关键词： porous silicon,thin silicon solar cells,quasi-monocrystalline porous silicon,photovoltaic parameters,AFORS-HET software
更新于2025-09-12 10:27:22