- 标题
- 摘要
- 关键词
- 实验方案
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Physical Properties of Pure and Nano Ag Doped Liquid Crystalline Compounds Containing 1,3,4-Oxadizole Unit
摘要： Dielectric properties and other physical properties such as electrical conductivity (AC) and relaxation time or activation energy have been studied for two systems pure LC [V]6,6, [V]7,6, [V]8,6, [V]6,7, [V]7,7 and [V]8,7 and their doped with silver nanoparticles. The results show the increasing in real dielectric permittivity ? with increasing length terminal chain. So the real dielectric permittivity increasing with raising temperature. To compare between the values of (400) Hz and (4000) Hz we observe these values at the low frequency are larger than that in high frequency. Generally, one can see that the doping of Ag nano particles effectively reduced the permittivity of the LC materials with its large electric dipole moment. The electrical conductivity σ value for pure LC samples in general increases with increasing temperature. So we observed increasing of electrical conductivity values at high frequency. The time scale is discussed in terms of the Arrhenius plot. Generally, with increasing the temperature the time period that spends by molecules at the transition state will increase. The activation energy Ea values show the increase in the activation energy to the doped systems.
关键词： Dielectric permittivity,Doped liquid crystals,Liquid crystals,Relaxation time,Electrical conductivity,Activation energy,Silver nanoparticles
更新于2025-09-04 15:30:14
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Nucleation-Limited Ferroelectric Orthorhombic Phase Formation in Hf <sub/>0.5</sub> Zr <sub/>0.5</sub> O <sub/>2</sub> Thin Films
摘要： Various possibilities have been proposed as the cause of the doped- or undoped-HfO2 thin film materials showing unusual ferroelectricity. These assumptions are based on empirical results, yet finding the origin of the unprecedented ferroelectricity within HfO2 has suffered from a serious gap between its theoretical calculation, mostly based on thermodynamic approach and the actual experimental results. To fill the gap, this study proposes to consider the kinetic energy, providing the evidence of the kinetic energy barrier upon a phase transformation from the tetragonal phase to the monoclinic phase affected by the TiN top electrode (capping layer). 10 nm thick Hf0.5Zr0.5O2 thin films are deposited and annealed with or without the TiN capping layer with subsequent annealing at different time and temperature. Arrhenius plot is constructed to obtain the activation energy for the tetragonal-to-monoclinic phase transformation by calculating the amount of the transformed phase using X-ray diffraction pattern. Johnson–Mehl–Avrami and nucleation-limited transformation models are utilized to describe the characteristic nucleation and growth time and calculate the activation energy for the monoclinic phase transformation of the Hf0.5Zr0.5O2 thin film. Both models demonstrate that the TiN capping layer provides a kinetic energy barrier for tetragonal-to-monoclinic phase transformation and enhances the ferroelectric property.
关键词： ferroelectric thin films,hafnium zirconium oxide,activation energy,nucleation-limited transformation,nucleation and growth transformation kinetics
更新于2025-09-04 15:30:14