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Monolithic axial and radial metal-semiconductor nanowire heterostructures
摘要： The electrical and optical properties of low dimensional nanostructures depend critically on size and geometry and may differ distinctly from those of their bulk counterparts. In particular, ultra-thin semiconducting layers as well as nanowires have already proven the feasibility to realize and study quantum size effects enabling novel ultra-scaled devices. Further, plasmonic metal nanostructures attracted recently a lot of attention because of appealing near-field mediated enhancement effects. Thus, combining metal and semiconducting constituents in quasi 1D heterostructures will pave the way for ultra-scaled systems and high-performance devices with exceptional electrical, optical and plasmonic functionality. This paper reports on the sophisticated fabrication and structural properties of axial and radial, Al-Ge and Al-Si nanowire heterostructures, synthesized by a thermally induced exchange reaction of single-crystalline Ge-Si core-shell nanowires and Al pads. This enables a self-aligned metallic contact formation to Ge segments beyond lithographic limitations as well as ultra-thin semiconducting layers wrapped around monocrystalline Al core nanowires. High-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy and μ-Raman measurements proved the composition and perfect crystallinity of these metal-semiconductor nanowire heterostructures. This exemplary selective replacement of Ge by Al represents a general approach for the elaboration of radial and axial metal-semiconductor heterostructures in various Ge-semiconductor heterostructures.
关键词： metal-semiconductor heterostructure,germanium,aluminum,transmission electron microscopy,nanowire
更新于2025-09-10 09:29:36
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field emission characteristics of individual ZnO nanowire before vacuum breakdown
摘要： The field emission characteristics of individual ZnO nanowire before breakdown were investigated. A current saturation was found during the pre-breakdown process. Mechanisms including the effects of joule heating, nanowire resistance and space charge effect have been considered. The analysis using simulation shows the phenomena could be related to space charge effect. However, more experimental and theoretical work should be carried out to pinpoint the exact mechanisms.
关键词： field emission,vacuum breakdown,ZnO nanowire,current saturation
更新于2025-09-10 09:29:36
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Wireless Real-time Temperature Monitoring of Blood Packages: Silver Nanowires-embedded Flexible Temperature Sensor
摘要： Real-time temperature monitoring of individual blood packages capable of wireless data transmission to ensure the safety of blood samples and minimize wastes has become a critical issue in recent years. In this work, we propose flexible temperature sensors using Ag nanowires (NWs) and a flexible colorless polyimide (CPI) film integrated with a wireless data transmission circuit. The unique design of the temperature sensors was achieved by patterning Ag NWs using a three-dimensional (3D) printed mold and embedding the patterned Ag NWs in the CPI film (p-Ag NWs/CPI film), which resulted in a flexible temperature sensor with electrical, mechanical, and temperature stability for applications in blood temperature monitoring. Indeed, a reliable resistance change of the p-Ag NWs/CPI film was observed in the temperature range of -20 °C to 20 °C with robust bending stability up to 5000 cycles at 5 mm bending radius. Real-time and wireless temperature monitoring using the p-Ag NWs/CPI film was demonstrated with the packages of rat blood. The result revealed that stable and consistent temperature monitoring of individual blood packages could be achieved in a blood box, which was mainly attributed to the conformal attachment of p-Ag NWs/CPI film to different packages in a blood container.
关键词： silver nanowire,3D printer,blood temperature,a flexible sensor,a temperature sensor
更新于2025-09-10 09:29:36
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Bright Stretchable Electroluminescent Devices based on Silver Nanowire Electrodes and High-k Thermoplastic Elastomers
摘要： Stretchable electroluminescent device is a compliant form of light emitting device to expand the application areas of conventional optoelectronics on rigid wafers. Currently, practical implementations are impeded by the high operating voltage required to achieve sufficient brightness. In this study, we report the fabrication of an intrinsically stretchable electroluminescent device based on silver nanowire electrodes and high-k thermoplastic elastomer. The device exhibit bright emission with low driving voltage by using polar elastomer as the dielectric matrix of the electroluminescent layer. Highly stretchable silver nanowire electrodes contribute to the exceptional elasticity and durability of the device in spite of bending, stretching, twisting, puncturing and cutting. Stretchable electroluminescent devices developed here may find potential uses in wearable displays, deformable lightings, and soft robotics.
关键词： silver nanowire,Stretchable electronics,electroluminescent,light-emitting device,stretchable electrode
更新于2025-09-10 09:29:36
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Catalyst-Free Growth of a Zn2GeO4 Nanowire Network for High-Performance Transfer-Free Solar-Blind Deep UV Detection
摘要： Solar-blind deep-ultraviolet (DUV) photodetectors have attracted wide attention because of their extensive military and civil applications. The ternary oxide Zn2GeO4 is an ideal material with a wide bandgap (Eg = 4.69 eV). In this work, DUV photodetectors based on a ternary Zn2GeO4 nanowire (NW) network were fabricated on SiO2/Si substrates. Reactive ion etching of the SiO2/Si wafer was used to grow the NW network to avoid contamination of the Au catalyst during synthesis of the Zn2GeO4 NW network via high-temperature chemical vapor deposition. Photodetectors based the Zn2GeO4 NW revealed fast response and recovery times, which is attributed to the unique cross-junction barrier-dominated conductance of the NW network. Results showed that the ternary oxide-based NW network is an ideal building block for nanoscale solar-blind photodetectors with superior performance.
关键词： Zn2GeO4 nanowire,ultraviolet photodetector,catalyst-free
更新于2025-09-10 09:29:36
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Spray Deposition of Ag Nanowire–Graphene Oxide Hybrid Electrodes for Flexible Polymer–Dispersed Liquid Crystal Displays
摘要： We investigated the effect of different spray-coating parameters on the electro-optical properties of Ag nanowires (NWs). Highly transparent and conductive Ag NW–graphene oxide (GO) hybrid electrodes were fabricated by using the spray-coating technique. The Ag NW percolation network was modi?ed with GO and this led to a reduced sheet resistance of the Ag NW–GO electrode as the result of a decrease in the inter-nanowire contact resistance. Although electrical conductivity and optical transmittance of the Ag NW electrodes have a trade-off relationship, Ag NW–GO hybrid electrodes exhibited signi?cantly improved sheet resistance and slightly decreased transmittance compared to Ag NW electrodes. Ag NW–GO hybrid electrodes were integrated into smart windows based on polymer-dispersed liquid crystals (PDLCs) for the ?rst time. Experimental results showed that the electro-optical properties of the PDLCs based on Ag NW–GO electrodes were superior when compared to those of PDLCs based on only Ag NW electrodes. This study revealed that the hybrid Ag NW–GO electrode is a promising material for manufacturing the large-area ?exible indium tin oxide (ITO)-free PDLCs.
关键词： polymer-dispersed liquid crystal,graphene oxide,silver nanowire,smart window,hybrid transparent conductive electrode
更新于2025-09-10 09:29:36
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[IEEE 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) - Kiev (2018.4.24-2018.4.26)] 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) - Plasmon Resonance Wavelengths of Circular Metal Nanowires with Account of Losses
摘要： We investigate the resonances in the scattering and absorption of the TE-polarized light by the solid silver, gold and copper wires of nanoscale diameter and circular cross-section. Here we use the analytical solution and experimental data for the metal complex permittivity function in the visible range. We find that the well-known textbook equation for the wavelength of the localized surface plasmon (LSP) resonances is valid for a silver cylinder but not for gold and copper ones. The reason is different values of losses in these metals: gold and copper have much larger values of imaginary part of the relative permittivity in the visible range than silver. This shifts the LSP resonances to considerably longer wavelengths. We present a simple modified equation for finding these wavelengths.
关键词： scattering,absorption,plasmon resonance,lossy metal nanowire
更新于2025-09-10 09:29:36
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Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of <i>top-down</i> n?+?InAs/p?+?GaSb nanowire tunneling devices
摘要： We study in this work the growth and fabrication of top-down highly doped n + InAs(Si)/p + GaSb(Si) Esaki tunneling diodes on (001) GaAs substrates. A careful investigation on the highly mismatched GaSb/GaAs growth is first conducted by means of Reflection High-Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and X-Ray Diffraction (XRD) analyses. These results are expected to pave the way to methods for III-Sb buffer layer’s integration with low threading dislocation (TD) densities. A comparison between AFM, XRD, defect revealing by chemical etching and transmission electron microscopy (TEM) is then presented to calculate the precise TD density and its influence on the device structure. In the last part, we report on first operating sub-30 nm III-V vertical NW tunneling devices on (001) commercial GaAs substrates.
关键词： III-Sb growth,AFM,dislocations,TEM,nanowire tunneling devices,XRD,RHEED,GaAs substrates
更新于2025-09-10 09:29:36
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Investigation of the performance of strain-engineered silicon nanowire field effect transistors (?-Si-NWFET) on IOS substrates
摘要： In the current work, a design space for developing the performance enhanced strain-engineered Si nanowire field-effect-transistors has been provided. The fraction of insertion of the nanowire channel into the Insulator-on-Silicon substrate with judicious selection of high-k gate insulators is used as the key design parameter. The combined effect of fractional insertion and gate insulators results in inducing stress into the nanowire channel and, depending on their selection, it changes from tensile to compressive. Such induced-stress alters the existing inherent phononic-stress, leading to the modification of the carrier transport in the device channel. The carrier transport behavior in such partially embedded nanowire FETs has been modeled by incorporating the relevant stress-related effects into the indigenously developed self-consistent quantum-electrostatic framework. These equations are solved by employing the non-equilibrium Green’s function formalism. The study shows the phonon scattering under tensile strain to occur at the expense of electron energy; however, the electrons can also gain energy during such scattering in compressive stress. Thus, the device current has been observed to increase with tensile stress and it achieves relatively smaller values when the inherent tensile phononic stress is balanced by the induced compressive stress. However, the current is finally observed to increase once the compressive stress overcomes the inherent tensile phononic stress. In general, the present devices exhibit promising Ion/Ioff ratio for all of the fractional insertions and gate dielectrics with a maximum Ioff of <10 nA/μm, threshold voltage of sub-0.3 V, gm of ～104 μS/μm, sub-threshold swing of ～100 mV/dec, and drain-induced-barrier-lowering of ～100 mV/V.
关键词： IOS substrates,high-k gate insulators,strain-engineered,silicon nanowire,non-equilibrium Green’s function,quantum-electrostatic framework,field-effect transistors
更新于2025-09-10 09:29:36
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Toward Nanowire HBT: Reverse Current Reduction in Coaxial GaAs/InGaP n(i)p and n(i)pn Core-Multishell Nanowires
摘要： In this work the reduction of reverse currents in Au-catalyzed, MOVPE grown coaxial GaAs nanowire diodes are reported. The reduction is achieved by introducing an interstitial, lattice-matched i-InGaP shell (spacer) as tunneling barrier inside the junction, which also functions as a selective etch stop. With increasing spacer thickness, rectification ratios of >1.57 (cid:1) 106 at (cid:3) 1.65 V, ideality factors of 1.3, and dark saturation current densities as low as (cid:4)2 are extracted, which are related to a reduced tunneling probability. Temperature-dependent DC measurements of junctions with thin spacers show a correlation to a simple (trap-assisted) tunneling model. With absolute reverse currents in the pA range down to (cid:4)3 V bias, the improved diode is implemented as a collector-base junction in a coaxial n(i)pn nanowire structure by growing an additional, outer n-doped InGaP shell as the emitter layer in a nanowire HBT.
关键词： nanowire,indium gallium phosphide,heterojunction bipolar transistors,leakage currents,gallium arsenide
更新于2025-09-09 09:28:46