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Device noise reduction for silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate
摘要： The sensitivity of metal-oxide-semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced device noise, 2.1×10-9 V2μm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
关键词： Noise reduction,field-effect transistor,ion sensor,low frequency noise,schottky junction gate,silicon nanowire
更新于2025-09-23 15:23:52
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Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire
摘要： A coherent photon source emitting at near-infrared (NIR) wavelengths is at the heart of a wide variety of applications ranging from telecommunications, optical gas sensing to biological imaging, and metrology. NIR-emitting semiconductor nanowires (NWs), acting both as a miniaturized optical resonator and as a photonic gain medium, are among the best-suited nanomaterials to achieve such goals. In this study, we demonstrate the NIR lasing at 1 μm from GaAs/GaNAs/GaAs core/shell/cap dilute nitride nanowires with only 2.5 % of nitrogen. The achieved lasing is characterized by an 'S'-shape pump-power dependence and narrowing of the emission line-width. Through examining the lasing performance from a set of different single NWs, a threshold gain, g_th, of 4100 – 4800 cm^{-1}, was derived, with a spontaneous emission coupling factor, β, up to 0.8, which demonstrate the great potential of such nanophotonic material. The lasing mode was found to arise from the fundamental HE11a mode of the Fabry-Perot cavity from a single NW, exhibiting optical polarization along the NW axis. Based on temperature dependence of the lasing emission, a high characteristic temperature, T_0, of 160(±10) K is estimated. Our results, therefore, demonstrate a promising alternative route to achieve room-temperature NIR NW lasers thanks to the excellent alloy tunability and superior optical performance of such dilute nitride materials.
关键词： dilute nitride,GaAs/GaNAs/GaAs,core/shell/cap structure,Nanowire lasers
更新于2025-09-23 15:23:52
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Applications of nanostructures in wide-field, label-free super resolution microscopy
摘要： Super resolution imaging capable of resolving details beyond the diffraction limit is highly desired in many scientific and application fields, including bio-medicine, nanomaterial science, and opto-electronic integration. Up to now, many different methods have been proposed, among which wide-field, label-free super resolution microscopy is indispensable due to its good applicability to diverse sample types, large field of view (FOV), and high imaging speed. In recent years, nanostructures have made a crucial contribution to the wide-field, label-free subdiffraction microscopy, with various working mechanisms and configuration designs. This review summarizes the recent applications of the nanostructures in the wide-field, label-free super resolution microscopy, with the emphasis on the designs of hyperlens with hyperbolic dispersion, microsphere with “nano-jets”, and nanowire ring illumination microscopy based on spatial frequency shift effect. The bottlenecks of the current techniques and possible solutions are also discussed.
关键词： spatial resolution,nanowire,metamaterials,optical microscopy
更新于2025-09-23 15:23:52
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Direct-printed nanoscale metal-oxide-wire electronics
摘要： One-dimensional metal oxide (MO) micro-wires and nano-wires (MOWs) can be excellent functional units for integrated and transparent electronics. However, MOWs produced using conventional synthesis methods are short, uncontrollable, and randomly-distributed, so they cannot be easily used to fabricate high-density transistor arrays with precisely-controlled MOW-channels. Here, we describe a large-scale direct-printed universal nanoscale MOW electronics which includes highly-aligned, digitally-controlled and arbitrarily-long MOW arrays and various nanoscale applications of MOW field-effect transistors (FETs), neuromorphic synaptic transistors, and gas sensors. Broad classes of pristine, doped and alloyed MOWs are fabricated, so we demonstrated all-MOWFETs composed of conducting indium oxide (In2O3) wires and semiconducting indium zinc oxide (IZO) wires; the devices show a high carrier mobility μ ~17.67 cm2 V-1 s-1, comparable to μ of MO thin-film FETs. MOW synaptic transistors show presynaptic signals dependent postsynaptic behaviors similar to biological synaptic responses; which can be promising nano-electronic units of high-density neuromorphic devices. We also demonstrated MOW gas sensors which show high response to NO2 gas. Our direct-printed, large-scale, and individually-controlled MOW electronics would be a promising approach in development of industrially-viable MOW electronics and open new horizons for precisely-controlled inorganic MOW electronics and nanoscale printed electronics.
关键词： synaptic transistors,metal oxide nanowires,metal oxide gas sensors,nanowire printing,metal oxide transistors,nanowire electronics
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A Simulation Perspective: The Potential and Limitation of Ge GAA CMOS Devices
摘要： The electrical characteristics of <110> n/p Ge nanowire transistors (NWTs) with the cross section of 6×6nm2 have been studied. The ION performance and the subthreshold swing are simulated by multi-subband Boltzmann transport equation and ballistic quantum transport solvers, respectively. The performance of <110> nGe NWTs is sensitive to the barrier height of interfacial layer due to highly-anisotropic Λ-valleys. The dimension-dependent k·p parameters based on tight-binding full band are used to address the strong confinement of pGe NWTs. Comparing to Si NWTs, the intrinsic ION is twice as high for both n/p Ge NWTs at 28nm channel length. As the channel length is scaled down, such ION benefit is maintained till the tunneling effect comes in and degrades the subthreshold swing.
关键词： source-to-drain tunneling,Ge,ballistic ratio,nanowire,CMOSFETs,interfacial layer
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - The Impact of Dopant Diffusion on Random Dopant Fluctuation in Si Nanowire FETs: A Quantum Transport Study
摘要： In this work, we perform statistical quantum transport simulations with 3×3 nm2 Si nanowire (NW) field-effect transistors (FETs) to investigate the impact of dopant diffusion on random dopant fluctuation. First, we use an effective mass Hamiltonian for the transport where the confinement and transport effective masses are extracted from the tight-binding band structure calculations. The dopant diffusion along the transport direction from the source/drain regions to the channel region is modeled by the Gaussian doping profile. To generate random discrete dopants, we adopt a rejection scheme considering the 3-dimensional atomic arrangement of the NW structures. Our statistical simulation results show that the diffused dopants into the channel region cause large variability problems in Si NW FETs.
关键词： non-equilibrium Green's function,tight-binding,dopant diffusion,random discrete dopants,silicon nanowire
更新于2025-09-23 15:22:29
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Corona assisted gallium oxide nanowire growth on silicon carbide
摘要： This article reports on the use of corona discharge to assist the vapor liquid solid growth of gallium oxide nanowires on silicon carbide substrates. The corona discharge increases the nucleation efficiency of the gold catalysts from 60 % to 98 % for 3C-SiC(111)/Si(111) Si-face substrates and from 15 % to 80 % for 6H-SiC(0001) substrates. The growth mode and crystal structure are not affected by the corona discharge. The gallium oxide growth starts with the formation of [-311] oriented laterally overgrown terrace like nucleation zones with the gold catalyst particles floating on top. With evolving process time, the growth proceeds in the faster [010] direction, resulting in nanowires with an inclination angle of 51° towards the substrate surface. On silicon and sapphire substrates, the nucleation and growth of gallium oxide nanowires are suppressed.
关键词： B2. Silicon carbide,B1. Gallium oxide,A1. Nanowire,A1. Corona discharge,A3. Vapor liquid solid,A3. Vapor phase epitaxy
更新于2025-09-23 15:22:29
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Optical diffraction radiation from a dielectric and a metal nanowire excited by a modulated electron beam
摘要： The optical diffraction radiation that accompanies the motion of a modulated beam of electrons near a dielectric and silver nanowire scatterers is investigated in the two-dimensional formulation. Our goal is to compute the field in the near and far zones and analyze how it depends on electron beam parameters. We demonstrate the excitation of internal resonances of such a scatterer that can be useful in the design of nanoscale non-invasive beam position monitors.
关键词： Plasmon resonance,Diffraction radiation,Nanowire scatterers,Total scattering cross-section,Absorption cross-section,Smith–Purcell effect,Surface wave
更新于2025-09-23 15:22:29
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Metal nanowire–polymer matrix hybrid layer for triboelectric nanogenerator
摘要： In this work, we studied the surface potential of a metal–polymer hybrid layer and its effect on the performance of a triboelectric nanogenerator (TENG). Ag nanowires (AgNWs) separately embedded in two different polymers–one with a positive tribopotential and the other with a negative tribopotential–were prepared as model hybrid systems. The surface potentials of the hybrid system were systematically investigated by Kelvin probe force microscopy. The results demonstrated that each component of the hybrid layer affected the other component because of the difference in their work functions. The following two important findings were obtained. First, the surface potential of each polymer shifted drastically toward that of Ag and the surface potential of Ag shifted toward that of each polymer. Second, higher density of AgNWs led to higher Ag-induced charge density in the polymer, which consequently resulted in larger shift in the surface potential of the polymer. TENG performance measurements revealed that the tribopotential difference between the contact surfaces of the AgNW–polymer hybrid layer and the perfluoroalkoxy alkane (or Nylon) used as the top triboelectric layer governed the TENG performance. Our systematic investigation of the surface potential of a hybrid surface consisting of two materials with different surface potentials provides insight into the design of triboelectric layers for high-performance TENGs.
关键词： triboelectric nanogenerator,silver nanowire,kelvin probe force microscopy,hybrid,surface potential
更新于2025-09-23 15:22:29
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Electron Beam Lithography for contacting single nanowires on non-flat suspended substrates
摘要： A methodology based on the use of Electron Beam Lithography for contacting individual nanowires on top of non-flat micromembranes and microhotplates has been implemented, and the practical details have been exhaustively described. The different fabrication steps have been adapted to the substrate’s topology, requiring specific holders and conditions. The methodology is demonstrated on individual SnO2 nanowires, which, after fabrication, have been characterized as functional resistive gas nanosensors towards NH3 and benchmarked against similar devices fabricated using more conventional Dual Beam Focused Ion Beam techniques, demonstrating the superior properties of the here presented methodology, which can be further extended to other non-conventional suspended substrates and nanomaterials.
关键词： Gas sensor based on individual metal oxide nanowire,EBL fabrication,microhotplates
更新于2025-09-23 15:22:29