- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Recent advances in III-Sb nanowires: from synthesis to applications
摘要： The excellent properties of III-V semiconductors have make them intriguing candidates for next-generation electronics and optoelectronics. Their nanowire counterparts further provide interesting geometry and quantum confinement effect which benefit various applications. Among many members of all III-V semiconductors, III-antimonide nanowires have attracted significant research interest due to their narrow direct bandgap and high carrier mobility. However, due to the difficulty of nanowire fabrication, the development of III-antimonide nanowires and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of the advance in the understanding and the fabrication technique, electronic and optoelectronic device based on III-antimonide nanowires with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide nanowire using different techniques and strategies for fine-tuning the crystal structure, composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide nanowires in electronics and optoelectronics is also surveyed. All these discussion would give valuable guidelines to the design of III-antimonide nanowires for next-generation device utilizations.
关键词： synthesis,application,nanowire,III-antimonide
更新于2025-09-23 15:22:29
-
Polychromatic emission in a wide energy range from InP-InAs-InP multi-shell nanowires
摘要： InP-InAs-InP multi-shell nanowires (NWs) were grown in the wurtzite or zincblende crystal phase and their photoluminescence (PL) properties were investigated at low temperature (≈6K) for different measurement geometries. PL emissions from the NWs were carefully studied in a wide energy range from 0.7 eV to 1.6 eV. The different features observed in the PL spectra for increasing energies are attributed to four distinct emitting domains of these nano-heterostructures: the InAs island (axially grown), the thin InAs capping shell (radially grown), the crystal-phase quantum disks arising from the coexistence of InP zincblende and wurtzite segments in the same NW, and the InP portions of the NW. These results provide a useful frame for the rational implementation of InP-InAs-InP multi-shell NWs containing various quantum confined domains as polychromatic optically active components in nanodevices for quantum information and communication technologies.
关键词： photoluminescence,multi-shell nanowire,InP-InAs-InP heterostructure
更新于2025-09-23 15:22:29
-
[IEEE 2018 International Conference on Emerging Trends and Innovations In Engineering And Technological Research (ICETIETR) - Ernakulam (2018.7.11-2018.7.13)] 2018 International Conference on Emerging Trends and Innovations In Engineering And Technological Research (ICETIETR) - Design, Simulation and Optimization of Metal Oxide Sensor for Ammonia Detection Using Nanowires
摘要： The levels of toxic gases are increasing enormously in the atmosphere, thereby causing adverse effects on the health of all living beings. There are various toxic gases like ammonia, oxides of nitrogen etc., which have to be detected and eliminated even if present in minute concentrations. Metal oxide based sensors is a sought-after technology for various reasons. In this paper, we present a method of detecting ammonia gas using titanium oxide nanowire based gas sensor. The basic principle of operation was adsorption of gas on to the sensing substance. This happens only at elevated temperatures which are provided by a micro hotplate. The aim was to increase the sensitivity of the sensor and to reduce the power consumption. Surface resistance, which varies due to interactions of gas and oxide, was taken as a measure to calculate the concentration in the ambience of sensor. COMSOL multiphysics tool was used for the performance analysis of the sensor.
关键词： metal oxide,COMSOL,nanowire,micro hotplate,toxic gases
更新于2025-09-23 15:22:29
-
Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure
摘要： Using capacitance, conductance and noise measurements, we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1D) array of GaN nanowire gate-all-around field effect transistor (GAA FET), fabricated via a top-down process. The surface traps in such a low dimensional device play a crucial role in determining the device performance. The estimated surface trap density rapidly decreases with increasing frequency, ranging from 6.07 × 1012 cm?2·eV?1 at 1 kHz to 1.90 × 1011 cm?2·eV?1 at 1 MHz, respectively. The noise results reveal that the power spectral density increases with gate voltage and clearly exhibits 1/f-noise signature in the accumulation region (Vgs > Vth = 3.4 V) for all frquencies. In the surface depletion region (1.5 V < Vgs < Vth), the device is governed by 1/f at lower frequencies and 1/f 2 noise at frequencies higher than ~ 5 kHz. The 1/f 2 noise characteristics is attributed to additional generation–recombination (G–R), mostly caused by the electron trapping/detrapping process through deep traps located in the surface depletion region of the nanowire. The cutoff frequency for the 1/f 2 noise characteristics further shifts to lower frequency of 102–103 Hz when the device operates in deep-subthreshold region (Vgs < 1.5 V). In this regime, the electron trapping/detrapping process through deep traps expands into the totally depleted nanowire core and the G–R noise prevails in the entire nanowire channel.
关键词： gate-all-around field effect transistor (FET),trap,nanowire,GaN,1/f-noise
更新于2025-09-23 15:22:29
-
Ultraviolet electroluminescence from nanostructural SnO2-based heterojunction with high-pressure synthesized Li-doped ZnO as a hole source
摘要： We report an ultraviolet (UV) electroluminescence (EL) in n-SnO2/p-ZnO heterojunction light-emitting diodes with the nanostructural SnO2 as an n-type layer and the Li-doped ZnO (ZnO:Li) synthesized by high-temperature high-pressure (HTHP) method as a high hole concentration p-type layer. Two kinds of SnO2 nanostructures including nanobelts (NBs) and nanowires (NWs) were used to fabricate n-type layers in the heterojunctions. The two heterojunctions with different SnO2 nanostructures demonstrate different light-emission feature in EL measurements. The SnO2 NBs/p-ZnO heterojunction shows a blue emission band centered at 416 nm under forward-bias voltage. A strong UV emission peak located at 391 nm was observed for the SnO2 NWs/p-ZnO heterojunction. Photoluminescence (PL) spectra indicate that the difference in EL is attributed to morphology-dependent light-emission feature in nanostructural SnO2 layer. Our results suggest that the nanostructural SnO2/ZnO:Li heterojunction is a potential and promising system in the UV optoelectronic field.
关键词： High-temperature high-pressure method,Light-emitting diode,Nanobelt,Nanowire,SnO2,Li-doped ZnO
更新于2025-09-23 15:22:29
-
Polarity Control in Growing Highly Ga-doped ZnO Nanowires with Vapor-liquid-solid Process
摘要： Surface behavior modification by forming surface transparent conductive nanowires (NWs) is an important technique for many applications, particularly when the polarities of the NWs can be controlled. The polarities of Ga-doped ZnO (GaZnO) NWs grown on templates of different polarities under different growth conditions are studied for exploring a polarity control growth technique. The NWs are formed on Ga- and N-face GaN through the vapor-liquid-solid (VLS) process using Ag nanoparticles as growth catalyst. The NWs grown on templates of different polarities under the Zn- (O-) rich condition are always Zn (O) polar. During the early stage of NW growth, because the lattice sizes among different nucleation islands formed at the triple-phase line are quite different, high-density planar defects are produced when lateral growths from multiple nucleation islands form a GaZnO double-bilayer. In this situation, frequent domain inversions occur and GaZnO polarity is unstable. Under the Zn- (O-) rich condition, because the lateral growth rate of GaZnO in the Zn- (O-) polar structure is higher due to more available dangling bonds, the growth of Zn- (O-) polar structure dominates NW formation such that the NW eventually becomes Zn (O) polar irrespective of the polarity of growth template. Therefore, the polarity of a doped-ZnO NW can be controlled simply by the relative supply rates of Zn and O during VLS growth.
关键词： catalyst,Ga-doped ZnO nanowire,vapor-liquid-solid growth,triple-phase line,polarity
更新于2025-09-23 15:21:21
-
Design guidelines for high sensitivity ZnO nanowire gas sensors with Schottky contact
摘要： Zinc oxide nanowire (ZnO NW) gas sensor with single Schottky contact is capable of sensitive detection of gas molecules. In this study, we investigate the effect of design factors such as nanowire defect density, diameter, and length on the gas sensitivity using 3-D numerical simulation. The sensor with lower defect density or smaller NW diameter exhibits improved gas sensitivity, while length does not have an impact when not considering the external environment such as background gases and binding probability. Lower defect density causes low electron density within the NW in air environment, and the change in electron density due to gas adsorption is intensified, thus improving gas sensitivity. As the NW diameter decreases, the change in the electrical conductivity due to gas molecules is greatly increased due to an increase in the ratio of the depletion area to the entire NW area. In contrast, the nanowire length does not impact the gas sensitivity because the change in the electron density is independent of the length. These results are helpful to understand the sensing mechanism and provide design guidelines to maximize the sensitivity.
关键词： Zinc oxide,Gas sensitivity,Nanowire,Numerical simulation,Gas sensor
更新于2025-09-23 15:21:21
-
Characterization of the Piezoresistive Effects of Silicon Nanowires
摘要： Silicon nanowires (SiNWs) have received attention in recent years due to their anomalous piezoresistive (PZR) effects. Although the PZR effects of SiNWs have been extensively researched, they are still not fully understood. Herein, we develop a new model of the PZR effects of SiNWs to characterize the PZR effects. First, the resistance of SiNW is modeled based on the surface charge density. The characteristics of SiNW, such as surface charge and effective conducting area, can be estimated by using this resistance model. Then, PZR effects are modeled based on stress concentration and piezopinch effects. Stress concentration as a function of the physical geometry of SiNWs can amplify PZR effects by an order of magnitude. The piezopinch effects can also result in increased PZR effects that are at least two times greater than that of bulk silicon. Experimental results show that the proposed model can predict the PZR effects of SiNWs accurately.
关键词： nonlinearity,silicon nanowire,surface depletion effects,piezoresistive effects
更新于2025-09-23 15:21:21
-
[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate
摘要： Doping is an important approach for improving the field emission properties of semiconductor nanowire field emitters. The indium-doped zinc oxide nanowires were prepared on ITO glass substrate by thermal oxidation method and field emission properties were measured. The prepared In-doped nanowire arrays shows excellent field emission performance with a turn-on field of 4.0 V/μm and current fluctuation of ~1.4%.
关键词： field emission,ZnO nanowire,indium doped
更新于2025-09-23 15:21:21
-
[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field Emission from Oxide Nanowires: Mechanism and Applications
摘要： In this invited talk, our recent progresses in the research of field emission from several oxide nanowires and their applications in vacuum microelectronic devices will be reviewed. Field emission properties from of CuO, WO3-x and ZnO nanowires were studied and their field emission mechanism were discussed. Applications of nanowire field emitter in gated field emitter, flat panel x-ray source and imaging detector were explored. Prototype of flat panel X-ray source using ZnO nanowire field emitters was fabricated and its high resolution imaging capability was demonstrated. The feasibility of a large area high-sensitive detector using ZnO nanowire field emitters is also verified.
关键词： flat panel X-ray source,field emission,ZnO nanowire
更新于2025-09-23 15:21:21