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[IEEE 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Paris, France (2019.9.1-2019.9.6)] 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Terahertz Emission due to Radiative Decay of Hot 2D Plasmons in AlGaN/GaN Heterojunction
摘要： Emission of terahertz radiation from a AlGaN/GaN/Al2O3 heterostructure with a surface metal grating is investigated under conditions of 2D electron heating in a lateral electric field. The studies are performed under essentially non-equilibrium conditions when the effective temperatures of 2D electrons and 2D plasmons are several times higher than the lattice temperature. This makes it possible to observe and explore high-quality peaks of intense THz radiation corresponding to 2D plasmon resonance.
关键词： electron heating,AlGaN/GaN heterojunction,radiation,terahertz,2D plasmons
更新于2025-09-16 10:30:52
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Analytical Study of Electron Mobility in Hemts Algan/Gan
摘要： The hetero junctions GaN based offer an excellent potential for power applications at high frequency. This is due to the important energy of the bandgap and high saturation velocity of electrons. The high mobility transistors (HEMT - High Electron Mobility Transistor) are based on the heterojunction AlGaN/GaN. Our work is the subject of an analytical study of the carrier mobility HEMTs AlGaN/GaN calculating Ionized impurities scattering, Residual impurities scattering, Interface roughness scattering, Alloy disorder scattering, dislocations scattering, Phonons and Dipoles taking into account the impact of technological parameters (doping, aluminium content) and geometric (thickness barrier, interface roughness). The results allowed us to take account of the variation of carrier density in the wells of 2D electronic gas.
关键词： HEMT,Mobility,Scattering mechanism,AlGaN/GaN heterojunction,2DEG
更新于2025-09-10 09:29:36