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[Advances in Imaging and Electron Physics] || AlN/GaN and InAlN/GaN DBRs
摘要： This chapter presents the high resolution monochromated STEM-EELS characterization of two distributed Bragg re?ector (DBR) multilayer heterostructures, composed of a periodic staking of III-nitride layers. These heterostructures were grown by the group of E. Calleja at the Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM), from Universidad Politéc- nica de Madrid. One of these DBR is composed of an alternate staking of AlN and GaN layers, and the other one, of InAlN lattice matched to GaN. EELS at sub-nanometric spatial resolution and < 200 meV energy resolution was used to assess the electronic properties of the structures. The EELS signal was treated using ZLP subtraction and deconvolution methods, and non-linear ?tting tools complemented with theoretical modeling of the electron scattering distribution. In this sense, the log-ratio formula was used to calculate the relative thickness, related to the electron inelastic mean free path. Moreover, ?tting of the bulk plasmon peak was performed using Lorentzian and Drude free-electron models. As we have seen, in group-III nitride alloys, the energy position of this peak can be related to the chemical composition variation through Vegard’s law. Also, within the context of the Drude plasmon model, information regarding the structural properties of the material can be obtained from the lifetime of the oscillation. This structural and chemical characterization of the layers was complemented with experimental and simulated high angle annular dark ?eld (HAADF) images. Finally, information related to the dielectric response of the mate- rials was extracted using Kramers–Kronig analysis. Our results signi?cantly improve the understanding of previous macroscopic characterizations of the electro-optical properties of these structures.
关键词： AlN/GaN,InAlN/GaN,Kramers–Kronig analysis,STEM-EELS,Vegard’s law,plasmon peak,DBRs
更新于2025-09-04 15:30:14
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-related Materials
摘要： Dominant recombination paths in AlN and AlxGa1?xN-related structures are investigated using cathodoluminescence (CL) mapping measurements and photoluminescence (PL) spectroscopy. The dark spot contrasts originating from nonradiative recombination at threading dislocations (TDs), which are observed in CL intensity maps, drastically decrease upon elevating the temperature. This is because carriers can reach TDs at low temperatures (9–60 K), but are captured by point defects (PDs) even in the vicinity of TDs near RT. Calculations based on the experimental results indicate that in the current AlN and Al-rich AlxGa1?xN crystals, TDs scarcely affect the internal quantum efficiency (IQE) at RT as long as the TD density is less than 2.6 × 1010 cm?2. Because a TD density less than 2.6 × 1010 cm?2 has already been achieved even for heteroepitaxially grown AlN films on sapphire substrates, it is evident that the most effective method to further improve the IQE of AlxGa1?xN-related materials is to reduce PDs not TDs. Moreover, we clarify the existence of two types of PD states, which mainly degrade the emission efficiency, using temperature-dependent PL measurements. Combining the CL and PL results allows the activation energies of these PDs and TDs to be evaluated. Furthermore, we highlight the probability that PDs, which predominantly act as nonradiative recombination centers at room temperature, are complexes formed by Al vacancies and oxygen impurities that enhance the deep-level emissions at 3.2 and 3.5–3.7 eV near room temperature. Such a large impact of PDs on the efficiency degradation may be attributed to the high density of Al-vacancy–related PDs in AlN and Al-rich AlxGa1?xN compared with that of Ga-vacancy–related PDs in GaN due to the small formation energy.
关键词： AlxGa1?xN,cathodoluminescence,internal quantum efficiency,point defects,photoluminescence,nonradiative recombination,AlN,threading dislocations
更新于2025-09-04 15:30:14