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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • thin-film transistors
  • N2O plasma treatment.
  • amorphous InGaZnO
  • gate-bias stress
  • stability
应用领域
  • Electronic Science and Technology
机构单位
  • Peking University
175 条数据
?? 中文（中国） ▾

  • Synthesis of Lithography Free Micro-Nano Electron Field Emitters Using Pulsed KrF Laser Assisted Metal Induced Crystallization of Thin Silicon Films

    摘要： Hydrogenated amorphous thin silicon films (a-Si:H) deposited on metal coated glass substrates were investigated to analyze the effect of a novel processing technique called Laser Assisted Metal Induced Crystallization (LAMIC) on their electron field emission (FE) properties. Post-surface characterization of the processed films showed increased surface roughness and the presence of uniformly spaced “island-like” micro-nano structures on the surface of metal coated backplane samples. Best FE results were obtained from samples sputtered with a thin layer of Aluminum (Al) on top and cross laser annealed at 190 mJ/cm2 (y-axis) and 100 mJ/cm2 (x-axis). FE measurements indicate a low turn-on electric field of less than 16 V/mm with emission currents in the order of 10?6 A. FE results were found to be particularly dependent on the laser fluence and the surface morphology exhibited very high discharge resistance. Oxidation of the films was observed to deteriorate their FE characteristics, thereby increasing the emission threshold to 36 V/mm. Diode configured field emission display prototypes are fabricated to exemplify their potential as cold cathode emitters.

    关键词： excimer laser crystallization,electron field emission,metal induced crystallization,micro-nano emitters,Hydrogenated amorphous silicon

    更新于2025-09-16 10:30:52

  • Evaluation of laser cleaning for defouling of marine biofilm contamination on aluminum alloys

    摘要： The environmental friendliness short-pulsed laser removal of marine bio?lm contamination developed on the surfaces of aluminum alloy substrates was innovatively applied. Natural bio?lms were formed using a seawater immersion method. The surface state was evaluated by considering the cleaning e?ectiveness and the harm exerted on the aluminum alloy substrate surfaces. The cleaning quality was analyzed using optical microscopy (OM), ?eld emission scanning electron microscopy (FE-SEM), and Fourier transform infrared spectroscopy (FT-IR). The laser-induced damage/change to the substrate surface was evaluated using laser scanning confocal microscopy (LSCM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). The results indicate that a nanosecond laser can be successfully used to quickly remove marine bio?lm contamination from the surface of an aluminum substrate by instantaneous thermal ablation. No clear thermal damage can be found on the laser-cleaned aluminum surface at a lower laser ?uence (1.08 J/cm2). In addition to the cleaning of marine bio?lm contamination, a higher laser ?uence (4.14 J/cm2) can also contribute to the formation of a hierarchical micro- and nanostructured oxidized layer. It is composed of amorphous-nanocrystalline phases.

    关键词： Amorphous-nanocrystal,Surface characterization,Marine bio?lm contamination,Laser cleaning,Hierarchical surface structures

    更新于2025-09-16 10:30:52

  • Strongly Coupled Amorphous Porous NbO <sub/>x</sub> (OH) <sub/>y</sub> /g‐C <sub/>3</sub> N <sub/>4</sub> Heterostructure Composite for Efficient Photocatalytic Hydrogen Evolution

    摘要： Heterostructure composites are promising materials in photocatalytic hydrogen evolution due to their advantage on promoting photogenerated carrier separation efficiently. However, the weak interfacial interaction can block electron transfer and complicate synthesis methods restrict the practical application of catalysts. Here, we report an interfacial enhanced amorphous porous NbOx(OH)y/g-C3N4 heterostructure composite through a spontaneous coupling process. It was characterized by XRD, TEM, FT-IR, XPS, NH3-TPD and CO2-TPD, etc., which demonstrated that NbOx(OH)y possess amorphous porous structures with high specific surface area (205 m2/g) and plenty of acidic sites (418 μmol/g) as well as basic sites (184 μmol/g) contributed from uncoordinated Nb and -OH. These acidic and basic sites electrostatically attract -NHx and C-OH on the surface of g-C3N4 to form hydrogen bonds (Nb-O-H???NH2, Nb-O???H-O-C), showing a strong electron interaction between NbOx(OH)y and g-C3N4. When tested as a photocatalyst for water splitting under visible light, the optimal NbOx(OH)y/CN-0.05 heterostructure composite exhibits a hydrogen evolution rate of 53 μmol/g/h, which is about 14 times higher than that of g-C3N4 (3.8 μmol/g/h) and is even superior than P25 (16 μmol/g/h). These present findings lay a foundation for the synthesis of strongly interacting heterogeneous composites.

    关键词： heterojunction,water splitting,amorphous niobium oxide,photocatalysis,g-C3N4

    更新于2025-09-12 10:27:22

  • Photoluminescence of a-Si/c-Si Heterojunction Solar Cells with Different Intrinsic Thin Layers

    摘要： The photoluminescence of two types of heterostructural silicon solar cells with di?erent passivation of crystalline silicon layer was studied. The contributions of various processes to the photoluminescence are revealed by measuring the photoluminescence at low temperatures. It is shown that the dopant concentration in crystalline silicon for solar cells based on an amorphous silicon/crystalline silicon heterojunction can be estimated from photoluminescence spectra. The correlation between the photoluminescence kinetics of heterostructural silicon solar cells and the photoconversion e?ciency is established. An e?ective method to determine the quality of surface doping in crystalline silicon solar cells based on an amorphous silicon/crystalline silicon heterojunction is proposed.

    关键词： amorphous silicon/crystalline silicon heterojunction,solar cells,photoluminescence of solar cells

    更新于2025-09-12 10:27:22

  • The versatility of passivating carrier‐selective silicon thin films for diverse high‐efficiency screen‐printed heterojunction‐based solar cells

    摘要： Providing state‐of‐the‐art surface passivation and the required carrier selectivity for both contacts, hydrogenated amorphous silicon thin films are the key components of silicon heterojunction (SHJ) solar cells. After intensive optimization of these layers for standard front and back contacted (FBC) n‐type cells, high surface passivation levels were achieved on cell precursors, demonstrated by minority carrier lifetimes exceeding 18 ms on float‐zone (FZ) and 11 ms on Czochralski (Cz) c‐Si wafers. The application of these very same layers on cheaper and commercially available Cz p‐type wafers resulted in similar passivation quality, with lifetimes above 10 ms as well. Large‐area industrial bifacial FBC SHJ cells processed on wafers taken along the full length of a high‐resistivity Cz p‐type ingot showed efficiencies in the 22.5% to 23% range, significantly higher than previously reported results on such substrates and on par with their n‐type counterparts. Best efficiencies on large‐area monofacial devices (>220 cm2) are 23.6% on Cz p‐type and 24.4% on Cz n‐type, similar to certified results obtained on lab‐scale cells (4 cm2), 23.76% on FZ p‐type and 24.21% on FZ n‐type. Notably, no specific adaptation of the reference n‐type cell process was necessary to achieve these results on p‐type material. Additionally, a 25% certified efficiency has been obtained on medium‐sized (25 cm2) interdigitated back‐contacted SHJ cells, featuring the same passivation layers developed for FBC devices. These results illustrate the versatility of the SHJ technology for various high‐efficiency screen‐printed solar cell configurations and show possible ways to improve its competitiveness on the global photovoltaic market.

    关键词： solar cell,heterojunction,amorphous silicon,passivated contacts,crystalline silicon

    更新于2025-09-12 10:27:22

  • Tetrahedral amorphous carbon prepared filter cathodic vacuum arc for hole transport layers in perovskite solar cells and quantum dots LEDs

    摘要： In this study, we demonstrated the feasibility of using tetrahedral amorphous carbon (ta-C) films coated through the filtered cathodic vacuum arc (FCVA) process as a hole transport layer (HTL) for perovskite solar cells (PSCs) and quantum dots light-emitting diodes (QDLEDs). The p-type ta-C film has several remarkable features, including ease of fabrication without the need for thermal annealing or any other post-treatment, reasonable electrical conductivity, optical transmittance, good chemical stability, and a high work function. Therefore, we present a simple and effective method to improve the performance of PSCs and QDLEDs by applying ta-C films as a HTL. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy examinations show that the electrical properties (sp3/sp2 hybridized bond) and work function of the ta-C HTL are appropriate for PSCs and QDLEDs. In addition, in order to correlate the performance of the devices, the optical, surface morphological, and structural properties of the FCVA-grown ta-C films with different thicknesses (5 ~ 20 nm) deposited on the ITO anode are investigated in detail. The optimized ta-C film with a thickness of 5 nm deposited on the ITO anode had a sheet resistance 10.33 Ohm/square, a resistivity of 1.34 × 10-4 Ohm-cm, and an optical transmittance of 88.97%. Compared to the reference PSC with p-NiO HTL, the PSC with 5 nm thick ta-C HTL yielded a higher power conversion efficiency (PCE, 10.53%) due to its improved fill factor. Further, performance of QDLEDs with 5 nm thick ta-C hole injection layers (HIL) showed better than performance of QDLEDs with different ta-C thicknesses. It is concluded that FCVA grown ta-C films have the potential to serve as HTL and HIL in next-generation PSCs and QDLEDs.

    关键词： Perovskite solar cells,Hole transport layer (HTL),Quantum dots LEDs,Tetrahedral amorphous carbon (ta-C) film,Hole injection layer (HIL)

    更新于2025-09-12 10:27:22

  • Current Controlled Switching in Si/PS/a-Si Heterostructure

    摘要： Current controlled switching has been observed in p-type crystalline Silicon (p-c-Si)/porous Si (PS)/n-type hydrogenated amorphous Silicon (n-a-Si:H) heterostructure. Mechanism of the switching is proposed consideringpresence of trapped carriers at the silicon nanocrystal-SiOx interface. A part of the trapped charges are considered to be bound near the n-a-Si:H/PS and PS/p-c-Si interface forming an additional coulomb barrier for the majority carriers. It is assumed that during the flow of current through the PS layer, the captured carriers get de-trapped by impact-excitation leading to breaking of the barrier after certain threshold value resulting in the switching. This model matches well with the experimental results.

    关键词： amorphous silicon,interface,porous silicon,Switching

    更新于2025-09-12 10:27:22

  • Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells

    摘要： Reactive sputtered boron-doped zinc oxide (BZO) film was deposited from argon, hydrogen and boron gas mixture. The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target. Textured surface was obtained in the as-deposited films. The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio. By varying the gas concentration ratio, the best obtained resistivity ~ 6.51×10-4 Ω-cm, mobility ~ 19.05 cm2 V-1 s-1 and sheet resistance ~ 7.23 Ω/□ were obtained. At lower wavelength of light, the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are >85%. We also fabricated amorphous silicon (a-Si) thin film solar cell on the best obtained BZO layers. The overall efficiency of the a-Si solar cell is 8.14%, found on optimized BZO layer.

    关键词： amorphous silicon,BZO,solar cells,Zinc oxide (ZnO),Magnetron reactive sputtering

    更新于2025-09-12 10:27:22

  • Growth of multi-morphology amorphous silicon oxycarbide nanowires during the laser ablation of polymer-derived silicon carbonitride

    摘要： Multi-morphology amorphous SiOC nanowires were successfully prepared within the interfacial interstices between the una?ected SiCN ceramic and the bracket during the laser ablation of polymer-derived SiCN ceramic in a low-pressure argon atmosphere. Laser irradiation experiments were performed using a continuous-wave CO2 laser, and the gas source for the growth of amorphous SiOC nanowires was provided by the laser ablation of the SiCN ceramic. X-ray photoelectron spectroscopy shows that the amorphous SiOC nanowires possess a SiO2 dominated nanostructure, and the formation of amorphous SiOC nanowires is attributed to the good di?usivity of CO in SiO2. The morphologies of the amorphous SiOC nanowires include straight nanowires, beaded nanowires, helical nanowires, and branched nanowires, and these are determined by the ?owing state of the reactant gases, the laser power, and the surface morphology of the SiCN ceramics. Each amorphous SiOC nanowire with speci?c morphology can be uniformly distributed in separate regions, which makes it possible to control the growth of amorphous SiOC nanowires in di?erent morphologies.

    关键词： Laser ablation,SiOC,Polymer-derived ceramics,Amorphous nanowires,Multi-morphology

    更新于2025-09-12 10:27:22

  • Effect of deep UV laser treatment on silicon-doped Tin oxide thin film

    摘要： In this paper, the effect of deep ultraviolet (UV) laser on physical and electrical properties of amorphous Silicon‐doped tin oxide (amorphous Si‐Sn‐O, a‐STO) thin films were studied. Surface morphology, thickness, crystallinity, and optical band gap of a‐STO thin films treated by laser were investigated. Results showed that the decrease of thickness and surface roughness of a‐STO thin films after deep UV laser treatment, and the films maintained an amorphous structure, which implied that the quality of a‐STO thin films were improved. The peak position of oxygen vacancy binding energy became lower; this is caused by an increase in oxygen vacancies resulting in a decrease in coordination number. And the oxygen vacancy content of the a‐STO thin films was increased after deep UV laser treatment. In addition, the optical band gap of a‐STO films was broaden after the deep UV laser treatment. It exploits a new application of deep UV laser in oxide semiconductor.

    关键词： oxygen vacancy,amorphous STO thin film,optical band gap,deep ultraviolet laser

    更新于2025-09-12 10:27:22