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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • thin-film transistors
  • N2O plasma treatment.
  • amorphous InGaZnO
  • gate-bias stress
  • stability
应用领域
  • Electronic Science and Technology
机构单位
  • Peking University
175 条数据
?? 中文（中国） ▾

  • P-1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back-channel-etched a-IGZO TFTs

    摘要： The back-channel-etched (BCE) amorphous InGaZnO thin-film transistors with different channel widths (Ws) are fabricated. The performance of VTH depends on both channel width (W) and drain voltage (VD) in this work. It is shown that neither W nor VD can create influence in VTH when W or VD is relatively small. However, when both W and VD are large enough, there will be an anomalous phenomenon that VTH increases with the increasing W or the increasing VD. The self-heating effect can be used to account for this anomalous dependence of VTH on W and VD.

    关键词： self-heating effect,drain voltage,threshold voltage,amorphous InGaZnO TFTs,channel width

    更新于2025-09-23 15:23:52

  • Unidirectional light scattering by up–down Janus dimers composed of gold nanospheres and silicon nanorods

    摘要： In this paper, a time-domain finite-difference (FDTD) method is used to simulate the scattering properties of a Janus dimer that a gold nanosphere is putted on the top of a silicon nanorod. We have demonstrated that the Janus dimer exhibits unidirectional scattering in the whole wavelength region of the sunlight. The unidirectionality of the dimer will improve with the height increase of the silicon nanorod and the gap decrease between two adjacent dimers. In our simulation, the forward-to-backward ratio (F/B) of the Janus dimer calculated dividing forward scattering spectra by backward scattering spectra can achieve the maximum of 20 when the height of silicon nanorod is 300 nm. What is more, we have applied the Janus dimers to amorphous silicon thin-film solar cells as antireflection structures. The reflectivity of the solar cells reduces by 39.40% and the short circuit current density improves by 5.04% than those of the reference. Therefore, the Janus dimers has a great application prospect in photovoltaic devices.

    关键词： Amorphous silicon solar cells,Janus dimers,Unidirectional scattering,Electric and magnetic dipole resonance

    更新于2025-09-23 15:23:52

  • Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience

    摘要： The light-illumination stability of amorphous InGaZnO Thin Film Transistors (a-IGZO TFTs) in oxygen and moisture ambience was in-depth characterized by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. With the illuminated light wavelength decreasing, both I-V and C-V curves shifted negatively. When the ambient oxygen content or moisture level increased, the a-IGZO TFTs exhibited more stable properties under light illumination. A qualitative model was proposed to explain the related physical mechanism. The higher oxygen content or moisture level bene?ted the light-illumination-induced oxygen adsorption at back channels of a-IGZO TFTs and prevented the formation of oxygen vacancies (VO) in channel layers; the VO variation with the light illumination became more di?cult and hence led to better light-illumination stability of the corresponding TFT devices.

    关键词： Thin ?lm transistor,Light-illumination stability,Amorphous InGaZnO,Ambient gases

    更新于2025-09-23 15:23:52

  • Optical and photoconductive properties of indium sulfide fluoride thin films

    摘要： This work reports on transparent semiconducting indium sulfide fluoride (ISF) thin-films exhibiting high sensitivity to ultraviolet radiation. The films were deposited on fused silica and silicon substrates using a radio-frequency plasma-enhanced reactive thermal evaporation system. The deposition was performed evaporating pure indium in SF6 plasma at a substrate temperature of 423 K. Rutherford backscattering measurements were used to determine the chemical composition of the films deposited on silicon substrates. The surface morphology was studied using scanning electron microscopy technique. The film characterization includes electrical, optical, and photoconductivity measurements. The synthesized compound is highly-resistive (~700 MΩ-cm at 300 K) and exhibits an evident semiconducting behavior. The activation energy of 0.88 eV is deduced from the temperature dependence of electrical resistivity. The indirect band energy gap of 2.8 eV is determined from transmittance spectra of the ISF films. The photoconductivity band is centered at 345 nm wavelength. The photoconductivity spectrum also shows the Urbach tail with a characteristic energy of 166 meV. ISF is a promising candidate for a buffer layer in chalcogenide-based solar cells.

    关键词： Thin-films,Indium sulfide fluoride,Optical properties,Photoconductivity,Photovoltaics,Amorphous semiconductors

    更新于2025-09-23 15:23:52

  • Millimeter-Scale Growth of Single-Oriented Graphene on a Palladium Silicide Amorphous Film

    摘要： It is widely accepted in condensed matter physics and material science communities that a single-oriented overlayer cannot be grown on an amorphous substrate because the disordered substrate randomizes the orientation of the seeds, leading to polycrystalline grains. In the case of two-dimensional materials such as graphene, the large-scale growth of single-oriented materials on an amorphous substrate has remained unsolved. Here, we demonstrate experimentally that the presence of uniformly oriented graphene seeds facilitates the growth of millimeter-scale single-oriented graphene with 3×4 mm2 on palladium silicide, which is an amorphous thin film, where the uniformly oriented graphene seeds were epitaxially grown. The amorphous palladium silicide film promotes the growth of the single-oriented growth of graphene by causing carbon atoms to be diffusive and mobile within and on the substrate. In contrast to these results, without the uniformly oriented seeds, the amorphous substrate leads to the growth of polycrystalline graphene grains. This millimeter-scale single-oriented growth from uniformly oriented seeds can be applied to other amorphous substrates.

    关键词： silicon carbide,amorphous substrate,single orientation,graphene,palladium silicide

    更新于2025-09-23 15:23:52

  • Synthesis and formation mechanism of amorphous silica particles via sol–gel process with tetraethylorthosilicate

    摘要： Silica microspheres with narrow particle size distribution and average diameter of 80-200 nm were prepared by hydrolysis and condensation of tetraethylorthosilicate (TEOS) in ethanol solution. Effects of TEOS, ammonia, water concentration, and temperature on particle size and morphology were investigated by laser particle size analysis and field emission scanning electron microscopy (FESEM), in conjunction with energy-dispersive X-ray spectroscopy (EDS), Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD) spectroscopy. Monomer addition model was employed to analyze the stability of intermediate, as well as the direction in which the reaction of silica particles proceeds. The analysis was carried out by Materials Studio. Results demonstrated that particle size of Nano-silica increases with increasing concentrations of H2O, NH3.H2O, and TEOS in ethanol, whereas the size decreases with increasing temperature. In addition, when proper amount of H2O was added into NH3.H2O at suitable temperature, silicic acid can act as a nucleus for amorphous Nano-silica particles, forming microspheres with round and smooth surfaces. By contrast, when TEOS was used, resultant nanoparticles have poor surfaces. During nucleation process of Nano-silica, silicic acid can also acts as nucleating agent providing a platform for the growth of nanoparticles with symmetric structure. Findings further indicated that the reaction proceeds by first silicic acid participates in the reaction, and the dimer and trimer molecules then react with the surface of silicic acid molecules; the same products could be produced by different reactions.

    关键词： Amorphous,St?ber Method,TEOS,Nano-silica,Monomer addition mode

    更新于2025-09-23 15:23:52

  • Facile fabrication and photocatalytic properties of Cu O (x?=?1 and 2) nanoarrays on nanoporous copper

    摘要： Micro-nano CuxO (x = 1 and 2) composite arrays were successfully synthesized on nanoporous copper (np-Cu) via one-step anodic oxidation method. With anodic time prolonging, the surface area and the length of pine-needle CuO clusters increased. The np-Cu/CuxO supported by amorphous layer composite as photocatalyst exhibited excellent photocatalytic activity and cycling stability for the degradation of Rhodamine B. Meanwhile, compared with the dif?culties of powders and nanoparticles in recycling, the ?exible and free-standing composite makes it easy for recovery of heterogeneous catalysts. The photocatalytic mechanism of np-Cu/CuxO was investigated.

    关键词： Nanocomposites,Amorphous materials,Porous materials,Functional

    更新于2025-09-23 15:23:52

  • Combustion synthesis of nontoxic water-induced InYO thin film and application in thin film transistor

    摘要： In the work, novel indium yttrium oxide (InYO) thin ?lms are prepared by an environmentally friendly aqueous solution process. Y element is added to suppress the generation of oxygen vacancies. The e?ect of Y doping on the performance and stability of nontoxic water-induced InYO thin ?lm transistors (TFTs) is ?rstly examined. With the increase of Y doping contents, o?-state current is decreased and mobility decreases from 15.8 to 11.7 cm2 V?1 s?1. Furthermore, the stability under positive bias stress is also obviously improved. The device with 2 mol% Y element shows an optimized electrical performance and good stability, including mobility of 12.8 cm2/V s, threshold voltage of 1.4 V, subthreshold swing of 0.33 V/decade and threshold voltage shift of 2.31 V under positive voltage stress of 5 V for 10,000 s. The performance improvement is attributed to the decrease of oxygen vacancies and the decline of interface trap density by Y addition.

    关键词： Thin ?lms,Amorphous materials,Electrical properties,Sol-gel chemistry

    更新于2025-09-23 15:23:52

  • Amorphous silicon and silicates-stabilized ZrO2 hollow fiber with low thermal conductivity and high phase stability derived from a cogon template

    摘要： ZrO2 ?bers are used as refractory materials owing to their excellent thermal resistance and thermal stability. Natural cogon ?ber is a type of hollow Gramineae ?ber, and usually contains a small amount of amorphous silicon and silicates, such as SiO2, MgSiO3, CaSiO4, and Al2SiO5, which can e?ectively avoid the phase transition of ZrO2. In this study, hollow ZrO2 ?bers with remarkable thermal insulation and phase stability were synthesized using a cogon ?ber template. The results showed that the ?nal ZrO2 ?bers successfully inherited the hollow structure and amorphous substance from the cogon template. The hollow structure of the biomorphic ZrO2 ?ber helped prevent heat ?ow more e?ciently compared to solid ?bers and reduced the thermal conductivity to a signi?cant extent. In addition, the amorphous silicon and silicates played an important role in the phase stability of tetragonal ZrO2; the transformation from the tetragonal to monoclinic phase was avoided at room temperature and in humid environment.

    关键词： Thermal conductivity,Amorphous silicon and silicates,Cogon ?bers,Phase stability,ZrO2 hollow ?bers

    更新于2025-09-23 15:23:52

  • Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors

    摘要： We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable Ga-N bonds for low nitrogen-doping (N-doping), but additionally formed less stable In-N and Zn-N bonds for high N-doping. The stable Ga-N bonds and few defects made the variation in oxygen vacancy (VO) more difficult and hence achieved better stability of thin film transistors (TFTs) with low doped a-IGZO:N channel layers. Contrarily, the less stable In-N and Zn-N bonds as well as excess defects led to an easier change in VO and thus more unstable a-IGZO:N TFTs for high N-doping.

    关键词： Amorphous InGaZnO (a-IGZO),Thin film transistors (TFTs),Nitrogen doping (N-doping),Chemical bonds

    更新于2025-09-23 15:22:29