Growth of multi-morphology amorphous silicon oxycarbide nanowires during the laser ablation of polymer-derived silicon carbonitride

摘要： Multi-morphology amorphous SiOC nanowires were successfully prepared within the interfacial interstices between the una?ected SiCN ceramic and the bracket during the laser ablation of polymer-derived SiCN ceramic in a low-pressure argon atmosphere. Laser irradiation experiments were performed using a continuous-wave CO2 laser, and the gas source for the growth of amorphous SiOC nanowires was provided by the laser ablation of the SiCN ceramic. X-ray photoelectron spectroscopy shows that the amorphous SiOC nanowires possess a SiO2 dominated nanostructure, and the formation of amorphous SiOC nanowires is attributed to the good di?usivity of CO in SiO2. The morphologies of the amorphous SiOC nanowires include straight nanowires, beaded nanowires, helical nanowires, and branched nanowires, and these are determined by the ?owing state of the reactant gases, the laser power, and the surface morphology of the SiCN ceramics. Each amorphous SiOC nanowire with speci?c morphology can be uniformly distributed in separate regions, which makes it possible to control the growth of amorphous SiOC nanowires in di?erent morphologies.