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Effects of substrate temperature and precursor amount on optical properties and microstructure of CVD deposited amorphous TiO2 thin films
摘要： In this research, TiO2 thin films were deposited on glass substrate by chemical vapor deposition using tetra isopropylorthotitanate as a precursor at low temperature. The TiO2 thin films were formed without using an oxygen source or annealing. Effects of substrate temperature and amount of the precursor on surface microstructure and optical properties of deposited TiO2 thin films were investigated. X-ray diffraction (XRD), UV-visible spectrophotometry and atomic force microscopy (AFM) were used to analyze the fabricated layers. The XRD analysis revealed that structure of all prepared layers was in amorphous phase. Analysis of AFM images showed that by increasing substrate temperature, the layer surfaces became rougher and simultaneously nanoparticle size was more uniform. Texture analysis revealed that increasing substrate temperature and decreasing precursor amount both increased surface isotropy. Thickness of layers was calculated by applying the Swanepoel method to the transmittance spectra. Variations in optical parameters were studied, including of optical band gap, refractive index, extinction coefficient, complex dielectric function, Urbach energy, single oscillator energy and dispersion energy. The results indicated that optical properties were functions of substrate temperature and precursor amount.
关键词： CVD,TiO2 thin film,Substrate temperature,Optical properties,Amorphous structure
更新于2025-09-23 15:22:29
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Correlation Between Currents, X-ray Diffraction Patterns and Transfer Characteristics of SnO <sub/>2</sub> Thin Film Transistor
摘要： SnO2 thin film transistor (TFT) was prepared with SiOC as a gate insulator on n-type Si and the correlation between bonding structures, the contact properties of SnO2 thin films and the transfer characteristics of TFTs was researched. The current of SnO2 thin films increased with increasing the crystallinity and the crystallinity of SnO2 was increased by annealing. The SnO2 deposited with much oxygen gas flows became an amorphous structure after annealing due to lowered crystallinity. On the other hand, the current decreased in the amorphous structure SnO2 with high oxygen vacancies. However, the ambipolar transfer characteristics of SnO2/SiOC TFT with an amorphous structure had higher stability-mobility than that of TFT with the crystallinity, because of the increment effect of the diffusion current at the depletion layer as the amorphous structure with high Schottky barrier (SB).
关键词： Amorphous Structure,SnO2,Capacitance,TFT,X-ray Diffraction
更新于2025-09-23 15:22:29