- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films
摘要： In this work, the ZnO films are deposited on conducting silicon chips by radio frequency magnetron sputtering. The as-deposited thin films are annealed at 800°C in a N2, O2 and CO+N2 atmosphere for 1h, respectively. The microstructure and electrical properties of the films are comprehensively investigated. XRD studies reveal that the ZnO films have a hexagonal wurtzite structure and they are highly oriented along (002) direction. The surface roughness of ZnO films decreased after annealing, which indicates better film quality. Room temperature PL spectrum is used to investigate the band gap and native defects existing in the films. Defects of thin films for different annealing conditions are analyzed in detail and the possible mechanism of the defects emission is discussed. We suggest that annealing atmosphere of CO+N2 is the most suitable annealing conditions for obtaining ZnO thin films with better crystal quality and good luminescence performance.
关键词： optical properties,ZnO thin films,annealing atmosphere
更新于2025-09-23 15:21:01
-
The effect of annealing conditions: temperature, time, ramping rate and atmosphere on nanocrystal Cu2ZnSnS4 (CZTS) thin film solar cell properties
摘要： Cu2ZnSnS4 (CZTS) nanoparticles were fabricated successfully using the hot injection method; CZTS films were deposited by spin coating of nanocrystal ink. The aim of this work is to study the effect of annealing parameters: temperature, time, ramping rate and atmosphere on CZTS thin film structure and optical properties. XRD, Raman Spectroscopy, SEM, EDX mapping are used to analyse the films and they demonstrate the increase in quality and improvement in the crystallinity of CZTS and the homogeneity of elements which is one of the important factors for CZTS thin film solar cells. The crystallinity, structure and chemical composition of CZTS thin films increased and improved under annealing in H2S+N2 atmosphere which demonstrated that annealing at 500 oC for 1 h with a ramping rate of 10 oC/min under H2S+N2 atmosphere is a suitable condition for the fabrication of CZTS thin films used in solar cell devices.
关键词： Annealing temperature,CZTS,Cu2ZnSnS4,Annealing time,Thin film solar PV,Annealing atmosphere,Annealing ramping rate
更新于2025-09-16 10:30:52
-
Enhancement in photovoltaic properties of bismuth ferrite/zinc oxide heterostructure solar cell device with graphene/indium tin oxide hybrid electrodes
摘要： Integrating of ferroelectric thin films with two-dimensional materials may provide a novel and unique characteristics in the field of optoelectronics due to the coupling of their distinctive intrinsic features. A heterostructure (bismuth ferrite/zinc oxide) device is fabricated with different types of the electrode to enhance the power conversion efficiency (PCE). A single-phase multiferroic BFO thin film is grown by atomic layer deposition (ALD) method and annealed in different environments such as helium, nitrogen, and oxygen. We investigated the effect of annealing parameters and different types of electrodes on solar cell applications. We observed that the leakage current 10 orders of magnitude was reduced by decreasing in the dielectric loss. Further, the power conversion efficiency (PCE) is improved from 4.1% to 7.4% with a hybrid transparent electrode (graphene/indium tin oxide). The value of PCE is further increased at a low temperature. So, the improvement in the key parameter of bismuth ferrite thin-film evidently highlights the importance of annealing atmosphere and graphene as an electrode in BFO thin film applications in optoelectronics.
关键词： Power conversion efficiency,Transparent electrode,Annealing atmosphere,Atomic layer deposition,Graphene,Leakage current
更新于2025-09-12 10:27:22