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[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - An Improved Random Path Length Algorithm for p-i-n and Staircase Avalanche Photodiodes
摘要： We present an improved Random Path Length algorithm to accurately and efficiently estimate the design space of heterostructure avalanche photodiodes (APDs) in terms of gain, noise and bandwidth without any need of full Monte Carlo transport simulations. The underlying nonlocal model for impact ionization goes beyond the Dead Space concept and it is suited to handle staircase structures composed by a superlattice of III-V compounds as well as thick and thin p-i-n APDs. The model parameters have been calibrated on GaAs and Al_xGa_{1-x}As p-i-n APDs in a previous work. In this work GaAs p-i-n APDs are compared to staircase structures in terms of noise and bandwidth.
关键词： Impact Ionization,Avalanche Multiplication,Random Path Length,Staircase APDs,Bandwidth,Excess Noise Factor,Simulation
更新于2025-09-23 15:22:29
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Strain Effect Enhanced Ultrasensitive MoS2 Nanoscrolls Avalanche Photodetector
摘要： 2D materials and their derived quasi one-dimensional structure bring incredible possibilities for the field of photoelectric detection due to the intrinsic optical and electrical properties. However, the photo-generated carriers in atomically thin media are poor due to the low optical absorption, which extremely limits the performance. Here, in the MoS2 nanoscrolls photodetector, we meticulously investigated the avalanche multiplication effect. The results show that by employing the nanoscrolls structure, the required threshold electrical field to trigger avalanche multiplication is significantly lowered compared with MoS2 flake due to the modulation of energy band and intervalley scattering through the strain effect. Consequently, the avalanche multiplication could efficiently enhance the photoresponsivity exceeding 104 A/W. Furthermore, enhanced avalanche multiplication could be generalized to other TMDCs through theoretical prediction. The results are not only significant for the understanding of intrinsic nature in 2D materials but also exhibit meaningful advance in high performance and low-power consumption photodetection.
关键词： Ultra-sensitivity,Nanoscrolls,2D materials,Avalanche multiplication effect,Photodetector
更新于2025-09-23 15:21:01