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Investigation of thin-film p-BaSi<sub>2</sub>/n-CdS heterostructure towards semiconducting silicide based high efficiency solar cell
摘要： In this article, semiconducting Barium Silicide (BaSi2) absorber based Al/SnO2:F/CdS/BaSi2:B/Cu novel heterostructure thin-film solar cell (TFSC) has been studied in details. The solar cell has been numerically simulated and intensely analyzed by Solar cell Capacitance Simulator (SCAPS). Layer thickness was varied from 100-3000 nm for p+-BaSi2 absorber, 20-200 nm for both n-CdS buffer, and n+-SnO2:F window layers to optimize the device. Hitherwards, the impurities concentration for acceptor (NA) and donor (ND) ions was optimized for each layer through ample variation. The influence of single-donor and acceptor type bulk defect densities has been investigated thoroughly in p+-BaSi2 and n-CdS materials, respectively. An efficiency >30% is achievable ideally with a 2 μm thick BaSi2 absorber without incorporating defects whereas it reduces to 26.32% with only 1.2 μm thick absorber including certain amount of defects. Cell thermal stability and alteration of cell parameters were studied under cell operating temperature from 273°K to 473°K. Finally, the effect of series (Rs) and shunt (Rsh) resistances on proposed cell has been investigated meticulously. This newly designed solar cell structure proclaims the chance of fabricating a resourceful, low cost, and highly efficient TFSC near future.
关键词： SnO2:F window,Thin-film solar cell,BaSi2 absorber,SCAPS simulation,CdS buffer,Optimization
更新于2025-09-23 15:19:57
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Growth of BaSi <sub/>2</sub> film on Ge(100) by vacuum evaporation and its photoresponse properties
摘要： We have successfully grown a polycrystalline orthorhombic BaSi2 film on a Ge(100) substrate by an evaporation method. Deposition of an amorphous Si (a-Si) film on the Ge substrate prior to BaSi2 evaporation plays a critical role in obtaining a high-quality BaSi2 film. By controlling substrate temperature and the thickness of the a-Si film, a crack-free and single-phase polycrystalline orthorhombic BaSi2 film with a long carrier lifetime of 1.5 μs was obtained on Ge substrates. The photoresponse property of the ITO/BaSi2/Ge/Al structure was clearly observed, and photoresponsivity was found to increase with increasing substrate temperature during deposition of a-Si. Furthermore, the BaSi2 film grown on Ge showed a higher photoresponsivity than that grown on Si, indicating the potential application of evaporated BaSi2 on Ge to thin-film solar cells.
关键词： photoresponse properties,Ge substrate,thin-film solar cells,BaSi2,vacuum evaporation
更新于2025-09-23 15:19:57
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Undoped p-type BaSi <sub/>2</sub> emitter prepared by thermal evaporation and post-annealing for crystalline silicon heterojunction solar cells
摘要： p-type BaSi2/n-type crystalline Si (p-BaSi2/n-Si) heterojunction solar cells with various BaSi2 thickness (dBaSi2) from 20 to 100 nm were fabricated using a simple preparation method, that is, post-annealing of undoped n-type BaSi2 prepared by thermal evaporation. With decreasing dBaSi2, short-circuit current density increased due to the reduction of the parasitic absorption in p-BaSi2. On the other hand, open-circuit voltage and fill factor decreased due to the increase of the leakage current. As a consequence, the solar cell with dBaSi2 = 80 nm showed a maximum conversion efficiency.
关键词： post-annealing,BaSi2,p-type emitter,heterojunction solar cells,thermal evaporation
更新于2025-09-23 15:19:57
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Properties of sputtered BaSi<sub>2</sub> thin films annealed in vacuum condition
摘要： Herein, BaSi2 films are deposited by the sputtering technique. A vacuum annealing process is subsequently carried out to crystallize sputtered BaSi2 films. Raman spectroscopy is used to study surface structures and crystalline quality. Elemental depth profile is measured by Auger Electron spectroscopy to understand the compositions of films. Optical and electrical properties are further investigated to reveal the effects of annealing condition. Applying vacuum annealing condition can effectively suppress diffusions of Ba and ensures a stochiometric BaSi2 layer. However, surface oxidation still occurs even in the vacuum environment owing to the high reactivity of Ba. Further attempts to prevent BaSi2 surface oxidation may focus on the combination of other methods, such as capping layer and reducing atmosphere, with vacuum (or low-pressure) annealing condition.
关键词： Auger Electron spectroscopy,vacuum annealing,BaSi2,surface oxidation,Raman spectroscopy,sputtering
更新于2025-09-12 10:27:22
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Formation of poly-crystalline BaSi2 thin films by pulsed laser deposition for solar cell applications
摘要： A new growth method for BaSi2 thin films by using pulsed laser deposition (PLD) on transparent SiO2 and CaF2 substrates has been developed. X-ray diffraction and Raman spectroscopy revealed the poly-crystalline property of the deposited films. By introducing a thin Si buffer layer on SiO2 substrate, the crystalline quality of BaSi2 thin films were improved. BaSi2 thin films exhibited a Ba/Si ratio very close to 0.5, indicating the good stoichiometry control of PLD growth. The absorption coefficient of the poly-BaSi2 reached 105 cm-1 and its band gap was deduced to be 1.32 eV, which are similar to those grown by molecular beam epitaxy or sputtering. A maximum photoresponsivity of 12.5 mA/W was achieved in the BaSi2 thin film, which implies the potential of PLD-deposited BaSi2 for thin film solar cell applications.
关键词： Thin films,BaSi2,Solar energy materials,Pulsed laser deposition
更新于2025-09-11 14:15:04