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[IEEE 2018 Second International Conference on Computing Methodologies and Communication (ICCMC) - Erode (2018.2.15-2018.2.16)] 2018 Second International Conference on Computing Methodologies and Communication (ICCMC) - Optimization of N+ hetero pocket doped Dual metal Vertical TFET
摘要： In this paper, an N+ hetero pocket doped Dual metal Vertical TFET is proposed. Due to an additional tunneling contribution to current along the body thickness of the device the proposed device offers larger ON current and steeper subthreshold slope (SS) as compare to conventional Tunnel FET. Here, the n+ pocket doping is incorporated near the gate source overlap region. Moreover, the pocket material is optimized with different bandgap materials. The dual metal gate (DMG) is used and compared with single material gate (SMG). Further, with an n+ layer at the p-source side, improvements in the device performance in terms of on-current (10-3A), subthreshold swing, SS (39mV/dec) are achieved. The proposed device is optimized for channel length, silicon body layer thickness, source doping engineering, gate dielectric material. Finally, the analog performance of the device is examined and found the device is suitable for high frequency application.
关键词： Dual Material Gate (DMG),Vertical TFET,Single Material Gate(SMG),Band-to-band tunneling (BTBT)
更新于2025-09-23 15:21:01
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[IEEE 2018 Conference on Emerging Devices and Smart Systems (ICEDSS) - Tiruchengode, India (2018.3.2-2018.3.3)] 2018 Conference on Emerging Devices and Smart Systems (ICEDSS) - A Comparison of Analytical Modeling of Double Gate and Dual material Double GateTFETs with high-KStacked Gate-Oxide Structure forLow power Applications
摘要： In this paper, an analytical comparative study of Double Gate Tunnel Field Effect Transistors(DG-TFETs) and Dual Material Double Gate Tunnel Field Effect Transistors(DMDG-TFETs) with high-K stacked gate oxide structure are presented. The modeling is done by solving the Poisson’s equation with Parabolic Approximation Technique with suitable boundary conditions. By using channel potential model, Surface potential is calculated.The Drain current model is developed by integrating band to band tunneling generation rate. The different electrical characteristics like surface potential, Electric field and Drain current have been compared for both TFETs in this paper. On comparing DG-TFETs with Dual material, DMDG-TFETs provide an enhanced performance. The analytical results are also compared with TCAD simulated results for both the devices and good agreement is observed.
关键词： Band-to-band tunneling (BTBT),Tunnel FET (TFET),Dual-material (DM) gate,Parabolic Approximation Technique
更新于2025-09-09 09:28:46
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Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs
摘要： Being fundamentally limited to a current–voltage steepness of 60 mV/dec, MOSFETs struggle to operate below 0.6 V. Further reduction in VDD and, consequently, power consumption can be achieved with novel devices, such as tunneling transistors (TFETs) that can overcome this limitation. TFETs, however, face challenges with low ON-current leading to slow performance. TFETs made from III-nitride heterostructures are quite promising in this regard. The lattice mismatch induces a piezoelectric polarization field in a nitride heterojunction that can boost the ON-current. However, it is shown here that the carrier thermalization at the heterointerface degrades the subthreshold characteristics. Therefore, a good design should minimize the number of confined quantum well (QW) states at the heterointerface so as not to degrade the subthreshold characteristics while maintaining the lattice mismatch induced polarization to boost the ON-current. We show here that an InAlN QW on an InGaN substrate alloy engineered TFET design is promising to fulfill these requirements. Proper engineering of the alloy mole fractions and the width of the well can eliminate (or at least minimize) the undesired thermalization effects and, at the same time, provide a lattice mismatch to induce a piezoelectric field for boosting the ON-current. We have used a suitable atomistic quantum transport model to simulate these devices. The model accounts for the different mechanisms that are involved, and captures realistic scattering thermalization effects. This model has been benchmarked in our earlier work with experimental measurements of nitride tunneling heterojunction diodes and is used here to optimize the alloy engineered nitride TFET.
关键词： EQNEQ,band-to-band tunneling (BTBT),phenomenological scattering,nitrides,TFET,tight binding (TB),Atomistic,nonequilibrium Green’s function (NEGF),internal polarization,steep devices
更新于2025-09-09 09:28:46