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Role of metallic dopants on the properties of copper (1) iodide nanopod-like structures
摘要： The addition of impurities as dopants to any material affects the properties of the material where the dopant modulates the optical and structural properties of the material. Copper (1) iodide films which were successfully doped with Al, Pb and Zn (as metallic dopants) were synthesized by the successive ionic layer adsorption and reaction (SILAR) technique while the morphological, structural, optical and electrochemical properties were investigated using the scanning electron microscope (SEM), X-ray diffraction (XRD), UV–Vis spectrophotometer and potentiostat respectively. The SEM image revealed a nanopod-like structure for the deposited CuI films while the XRD results confirmed the crystalline nature of the films with a face centered cubic structure. The optical results showed a progressive decrease of the absorbance values at increasing wavelengths while the optical bandgap energy of the undoped CuI film reduced from 2.47eV to 1.90eV, 1.75eV and 1.8eV for the Al-doped, Pb-doped and Zn-doped CuI films respectively. The undopedCuI film also showed a higher extinction coefficient value than the metallic-doped CuI films. The Zn-doped film had the maximum specific capacitance of 116 F g?1 at 2 mV/s.
关键词： Bandgap energies,Metallic dopants,CuI,SILAR,Specific capacitance
更新于2025-09-19 17:15:36
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Electroreflectance studies of Zn(O,S) buffer layers in Cu(In,Ga)Se <sub/>2</sub> solar cells: Bandgap energies and secondary phases
摘要： Solution-grown Zn(O,S) buffer layers in Cu(In,Ga)Se2 (CIGS) solar cells are investigated by angle-resolved electroreflectance (ER) spectroscopy. We demonstrate that ER can be used directly to measure the bandgap energy of very thin Zn(O,S) buffer layers in the device. Furthermore, ER measurements on CIGS solar cells with different gallium concentrations before and after thermal annealing (TA) were conducted and show no significant influence of the gallium concentration and TA on the buffer’s bandgap energy, as determined in the range of 2.8 – 2.9 eV. Moreover, some ER spectra exhibit an additional contribution at 2.3 eV. This finding can be ascribed to a secondary phase at the interface between CIGS absorber and Zn(O,S) buffer layer.
关键词： S) buffer layers,Zn(O,Cu(In,Ga)Se2 solar cells,secondary phases,electroreflectance spectroscopy,bandgap energies
更新于2025-09-19 17:13:59