- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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A Phase-Calibration Method for Vector-Sum Phase Shifters Using a Self-Generated LUT
摘要： This paper presents a new self-calibration method for vector-sum phase shifters (PS) to compensate for process variations and achieve reconfigurable operating frequency. The calibration system generates a look-up table for the control voltages of the variable-gain amplifiers of the PS to minimize the rms phase error at a frequency of interest. The calibration system consists of a coupled-line coupler, an amplifier, a power detector (PD), an analog-to-digital converter, and a data processing unit. In this calibration method, first, the amplitudes of IQ vectors are swept and their powers are measured. Then, phase errors are calculated from these power measurements using the cosine formula. Finally, the vector pairs providing the least phase error are chosen for each desired phase shift. The practicality of the proposed system is demonstrated by realizing a self-calibrated X-band 7-b PS fabricated in IHP 0.25-μm SiGe BiCMOS technology, including the on-chip coupler, amplifier, and PD. The calibration system improves the rms phase error by at least 1°, does not degrade the rms gain error, and increases the insertion loss by 1.6 dB. The self-calibrated PS achieves a 2° rms phase error across X-band frequencies. The overall chip size is 2.6 mm2. The power consumption of the PS and the overall system are 110 and 233 mW, respectively. This built-in calibration system mitigates process variation effects, and the performance of the PS can be optimized for any center frequency across X-band.
关键词： BiCMOS,vector-sum phase shifter,look-up table,Self-calibration,process compensation,phase shifter,SiGe
更新于2025-09-23 15:23:52
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Ultra-Low Noise Amplifier for X-Band SiGe BiCMOS Phased Array Applications
摘要： This paper presents a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in CE configuration. The presented amplifier stage can achieve sub-1dB NF performance with ~10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors' knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.
关键词： noise,transceivers.,low-noise amplifier,BiCMOS integrated circuits
更新于2025-09-23 15:22:29
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A SiGe BiCMOS phase shifter based on quarter‐wave coupled resonators
摘要： This work presents the first example of monolithically integrated phase shifter based on a pass-band filter architecture. The proposed configuration was realized mapping a classical quarter-wave coupled filter circuit into its lumped element equivalent. Phase control is achieved by controlling the pass-band through tunable tanks employing varactor diodes. A demonstrator was prototyped in the 24 GHz ISM band using a 0.25μm SiGe BiCMOS technology. Experimental results show 180° of phase range and maximum transmission losses of 8 dB. The main feature of this configuration is that it allows controlling the transmission losses by design and that its size is extremely compact.
关键词： SiGe BiCMOS,varactor,phase shifter,pass-band
更新于2025-09-11 14:15:04
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[IEEE 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Erlagol (Altai Republic), Russia (2018.6.29-2018.7.3)] 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM) - Differential Broadband Transimpedance Amplifier in 130 nm SiGe BiCMOS
摘要： To build modern ultrafast systems on chip, high-frequency transimedance amplifiers are required. In view of the fact that the amplifier is connected at the output of the system, high requirements the level of nonlinear distortions are imposed on. In addition, the amplifier should have a small unevenness in the bandwidth. The article presents a fully differential transimpedance amplifier, which allows to match the system with a load of 50 Ω. The amplifier has a range of operating frequencies of 0.1 ... 3 GHz, gain of 20 dB, with a unevenness not exceeding 2 dB. The described amplifier is built in the 130 nm SiGe BiCMOS process. Operating temperature range -40 ... 85°C. The current consumption is 18 mA.
关键词： SiGe,emitter follower,transimedance amplifier,defferential cascade,matching,BiCMOS
更新于2025-09-10 09:29:36
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[IEEE 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Cancun (2018.8.29-2018.8.31)] 2018 IEEE 15th International Conference on Group IV Photonics (GFP) - Electronic ICs for Silicon Photonic Transceivers
摘要： We present progress on high-speed electronic ICs for Silicon Photonic transceivers. The design freedom offered by Silicon Photonics is exploited to generate multilevel modulation formats, reduce power consumption and physical footprint or increase speed. We show drivers and receivers integrated in CMOS and SiGe BiCMOS processes.
关键词： CMOS and SiGe BiCMOS integrated circuits
更新于2025-09-10 09:29:36
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DSP-free and Real-Time NRZ transmission of 50 Gb/s over 15 km SSMF and 64 Gb/s back-to-back with a 1.3 μm VCSEL
摘要： We demonstrate and analyze 50 Gb/s non-return-to-zero (NRZ) transmission over 15 km of standard single-mode fiber (SSMF), 60 Gb/s NRZ transmission over 5 km of SSMF and up to 64 Gb/s NRZ back-to-back using a directly modulated short-cavity long-wavelength single-mode VCSEL emitting at 1326 nm. Owing to an analog 6-tap transmit feedforward equalizer, the link can operate without digital signal processing. In all three cases, real-time bit error ratio measurements below the 7% overhead hard-decision forward error correction (FEC) threshold are demonstrated when transmitting a pseudo-random bit sequence (PRBS) with a period of 27-1 bits. In addition, we analyze the interplay between the residual fiber chromatic dispersion at the operating wavelength of the VCSEL and the chirp due to direct modulation. These results demonstrate how O-band, short-cavity long-wavelength single-mode VCSELs can be used in intra data center networks, as well as inter data center networks at reaches below 15 km.
关键词： Fiber Optics Communications,Optical Interconnections,Vertical Cavity Surface Emitting Lasers,BiCMOS integrated circuits,Chirp,Analog Equalization
更新于2025-09-09 09:28:46
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[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - High Linearity 57–66 GHz SiGe Receiver for Outdoor Point-to-Point Communication
摘要： Fully integrated receiver in a superhetrodyne architecture covering the entire 60 GHz frequency range (57-66 GHz) was designed and fabricated in 0.12 μm SiGe technology. The receiver chip includes an image-reject low-noise amplifier (LNA), RF-to-IF mixer, RF variable attenuator, IF variable gain amplifier, quadrature IF-to-baseband de-modulators, tunable baseband filter, phase-locked loop (PLL), and x3 frequency multiplier. The receiver chip achieve maximum gain of 65 dB, 5 dB minimum noise figure, better than 2 dBm IIP3 at high linearity mode, with >75 dB dynamic range, and consumes 630 mW.
关键词： V-Band,SiGe BiCMOS,receiver,mm-Wave integrated circuits,60 GHz
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - San Diego, CA, USA (2018.10.15-2018.10.17)] 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) - A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS
摘要： This paper presents a low-power, ESD-protected 24 GHz single-ended input to differential output single-stage cascode LNA in In?neon’s SiGe BiCMOS technology. The proposed circuit uses bridged T-coils as loads to provide an inductive voltage divider for impedance transformation and extend the bandwidth. To reduce power consumption, the circuit operates from a low supply voltage of 1.5 V. Therefore, to compensate for reduced linearity the circuit uses a multi-tanh doublet. At the center frequency of 24 GHz the ampli?er offers a gain of 12 dB and a noise ?gure of 2.6 dB including the on-chip input balun. The circuit exhibits a competitive linearity of ?10 dBm input-referred 1dB compression point at 24 GHz. The LNA consumes 18 mA from a single 1.5 V supply. The ESD hardness has been investigated using an HBM pulse generator. The circuit exhibits a 6 kV HBM hardness at the input RF pin. The chip size including the pads is 0.49 mm2.
关键词： low-power,radar applications,ESD-protected,SiGe BiCMOS,LNA,24 GHz
更新于2025-09-04 15:30:14