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Improved Photovoltaic Effect of <i>pa??ia??n</i> Structured BiFeO <sub/>3</sub> Film Deposited by Radio-Frequency Magnetron Sputtering
摘要： Pure phase polycrystalline BiFeO3 ?lm was deposited onto FTO substrate by RF magnetron sputtering method. SEM result shows that BiFeO3 ?lm has the obvious porosity and large clusters which lead to the poor ferroelectric and photovoltaic properties in FTO/BiFeO3/Ag device. However, these properties are improved in p–i–n structured FTO/TiO2/BiFeO3/HTM/Ag device by incorporating the electron and hole transport materials. The hysteresis loop measurement demonstrates the excellent ferroelectric property with large remnant polarization (2Pr = 180 (cid:2)C/cm2) and low leakage current. The J–V curve shows the short-circuit current density is dozens of times larger than that of FTO/BiFeO3/Ag device. Moreover, the photovoltaic output depends on the poling ?eld where the positive poling improves the short-circuit current density to ?85 (cid:2)A/cm2 and the negative poling reduces both the photocurrent and photovoltage. It is believed that the ferroelectric polarization plays a dominant role in the photovoltaic effect.
关键词： BiFeO3 Film,Sputtering,Photovoltaic Effect
更新于2025-09-23 15:19:57
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Photovoltaic, photo-impedance, and photo-capacitance effects of the flexible (111) BiFeO <sub/>3</sub> film
摘要： Ferroelectric polarization allows a depolarization electric field to separate electron-hole pairs excited by lights, and thus, the photovoltaic properties of ABO3-type films on a hard SrTiO3 or Si substrate have been extensively studied recently. However, there are a few reports on the photocapacitance and photoimpedance of these oxide films, especially on flexible substrates. In this work, the strong photovoltaic, giant photocapacitance, and photoimpedance effects were observed in the flexible (111) BiFeO3 films with natural downward polarization. The flexible mica/SrRuO3/BiFeO3/Au cells show a maximum photovoltaic efficiency at 150 °C, a 95.5% decrease in photoimpedance effects, and a 316% increase in photocapacitance effects under 405-nm-wavelength light illumination at 25 °C. Most importantly, these properties do not show obvious degradation when the device is bent to 3 mm radius for 104 times. This work is of vital importance for us to develop new flexible photoelectronic devices.
关键词： photo-capacitance,photovoltaic,flexible,photo-impedance,BiFeO3 film
更新于2025-09-11 14:15:04