- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Structural, electrical, optical and thermoelectric properties of e-beam evaporated Bi-rich Bi2Te3 thin films
摘要： Bi-rich Bi2Te3 thin films are prepared at 300 K using e-beam evaporation technique. A source power of 45 W for e-beam was used. Post deposition, these as-deposited Bi-rich Bi2Te3 (Bi-BT-AD) films are annealed at 100 °C (Bi-BT-100), 200 °C (Bi-BT-200) and 300 °C (Bi-BT-300) for 1 h under a pressure of 3 × 10-4 Pa. X-ray diffraction measurements reveal the presence of Bi phase together with crystalline Bi2Te3 indicating the possible presence of Bi-rich Bi2Te3 phase in the Bi-BT-AD film. The broad peaks from Bi2Te3 (015) plane indicates nanocrystalline nature of particles. With annealing, no change in diffraction pattern is observed for Bi-BT-100. However, Bi-BT-200 and Bi-BT-300 films show the emergence of x-ray reflection from unknown phases around 2θ ~ 20° and 47°. This indicates Bi related secondary phase segregation and the thermodynamic instability for the presence of Bi in Bi2Te3 lattice. From Raman studies it is discerned that Bi secondary phase coexist along with the Bi-rich Bi2Te3 nanocrystalline grains. On vacuum annealing Bi-rich Bi2Te3 thin films prevails as evidenced from the p-type electrical characteristics, while excess Bi disappears and converts into an unknown minor phase. The resistivity of all the annealed films are ~ 0.9 × 10-4 Ωcm. The Seebeck coefficients also do not show any change and remain around 33 to 36 μV/K. Thermoelectric properties of Bi-BT-100 exhibit high power factors when measured at different ΔT with a maximum of ~ 17.5 × 10-4 W/K2m for ΔT=100 °C. Thus, unlike the near-stoichiometric thin films, Bi-rich thin films require low temperature annealing (~100 °C) to achieve optimized parameters. Bi-rich Bi2Te3 thin films also show higher power factor compared to the near-stoichiometric thin films. Thus, favourable thermoelectric properties can be achieved at 300 K for temperature sensitive device fabrication using Bi-rich Bi2Te3 thin films.
关键词： Bismuth-rich bismuth telluride,thin films,electron-beam evaporation,power factor.
更新于2025-09-23 15:23:52
-
One-step preparation of Bi4O5BrxI2?x solid solution with superior photocatalytic performance for organic pollutants degradation under visible light
摘要： Highly e?cient photocatalyst is the demand for controlling environmental pollution, especially the toxic and refractory organic contaminants. Herein, a series of bismuth-rich Bi4O5BrxI2?x solid solution photocatalysts were prepared through a one-step solvothermal method by adjusting the molar ratio of Br/I, which can e?ectively degrade organic pollutants of phenol and Rhodamine B (RhB). The structure and morphology of the photocatalysts were characterized by X-ray di?raction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscope (SEM), transmission electron microscope (TEM) and high resolution transmission electron microscope (HRTEM). The results indicated that Bi4O5BrxI2?x solid solution photocatalysts were successfully synthesized. The obtained samples showed superior photocatalytic activities toward phenol and RhB under visible light irradiation. Besides, the photocatalytic performances can be optimized by changing the ratio of Br/I. When the ratio of Br/I was 1:1, the obtained Bi4O5BrxI2?x solid solution exhibited the highest photocatalytic performance, which was nearly 6.4 and 8.5 times higher than that of pure Bi4O5Br2 and Bi4O5I2 for phenol degradation, respectively. The enhancement can be ascribed to the high e?cient separation of photogenerated electron-hole pairs in Bi4O5BrxI2?x solid solution, which was con?rmed by the corresponding optical and photoelectrochemical characterizations.
关键词： One-step synthesis,Photocatalytic,Bi4O5BrxI2?x solid solution,Bismuth-rich
更新于2025-09-23 15:23:52