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Graphene oxide-doped PEDOT:PSS as hole transport layer in inverted bulk heterojunction solar cell
摘要： Transparent poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) (PEDOT:PSS) is widely used hole conducting material in optoelectronic devices. Secondary doping of PEDOT:PSS enables the tunability of its electronic properties. In this work, graphene oxide (GO) was used as a secondary dopant for PEDOT:PSS and the doped materials (composites) were tested for their efficiency as hole transport material in inverted bulk heterojunction (BHJ) solar cell. The composites were studied to unveil the effects of Coulombic interaction between GO and PEDOT:PSS where we note some segregation of PEDOT phase. We found that the GO majorly interacts with PSS through oxygeneous functional groups which promote the detachment of PEDOT from PSS and segregation of PEDOT. Electrochemical properties with and without illumination revealed some photo-induced changes to surface of the samples. Device performances showed about 2.2% efficiency enhancement when GO doping level was 0.25 (v:v) when compared to that of pristine PEDOT:PSS.
关键词： Hole transport layer,Graphene oxide,PEDOT:PSS,Secondary doping,Bulk heterojunction solar cell
更新于2025-09-16 10:30:52
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Influence of active layer thickness on photovoltaic performance of PTB7:PC70BM bulk heterojunction solar cell
摘要： In this paper, we studied the effect of active layer thickness on the photovoltaic performance of inverted bulk heterojunction (BHJ) organic solar cell (OSC). The capacitance-voltage (C–V), dark current-voltage (I–V) and impedance spectroscopy (IS) analysis were carried out to explain the active layer thickness dependence on the photovoltaic performance. The OSC with an active layer thickness of 150 nm achieved the best power conversion efficiency (PCE) of 5.87%, while the OSC of 200 nm active layer thickness yielded the worst PCE. Reduction in the fill factor (FF) was the main reason for the reduction in the PCE at large active layer thickness. The dark I–V analysis revealed large defect density for the OSC with active layer thickness of 200 nm, which raised the charge recombination and leakage current and consequently reduced the FF. IS analysis predicted that the charge transport became the serious limitations for the OSC with 200 nm thick active layer, which can be attributed to the weakening of electric field as well as creation of field-free regions. It mainly caused a drastic drop in the fill factor by reducing the charge collection efficiency, consequently deteriorated the photovoltaic performance.
关键词： Charge recombination,Bulk heterojunction solar cell,Ideality factor,Photovoltaic performance,Charge transport resistance,Leakage current
更新于2025-09-16 10:30:52