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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • contrast stretch
  • CMOS image sensor
  • point-of-care (POC) diagnosis
  • bio-microfluidic imaging
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Xi’an University of Technology
183 条数据
?? 中文（中国） ▾

  • Vertically symmetric broadband lumped element CMOS directional coupler

    摘要： A vertically symmetric lumped element directional coupler (VSLEDC) providing broadband characteristics is proposed. In simulations, the proposed VSLEDC showed a 43.8% broader bandwidth than a horizontally and vertically symmetric lumped element directional coupler under similar design conditions for the same insertion loss. The proposed coupler was implemented in a Global Foundry 130 nm CMOS technology. The overall chip size was 1300 μm × 850 μm. The coupling was designed to be ?10 dB at 1 GHz. The S-parameter measurements showed an absolute bandwidth and a fractional bandwidth of 141.1 MHz and 14.11%, respectively. Within the bandwidth, the insertion loss was 1.6?1.8 dB.

    关键词： lumped element,directional coupler,Vertically symmetric,broadband,CMOS

    更新于2025-09-04 15:30:14

  • [IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - First and Second Order Piezoresistive Characteristics of CMOS FETs: Weak through Strong Inversion

    摘要： Experimental results validate a continuous model describing the stress dependencies of CMOS FETs from weak through strong inversion. The model incorporates the significant impact of threshold voltage changes (through ni2) on the stress responses in all regions of operation and describes both first- and second-order longitudinal and traverse piezoresistive coefficients for PMOS and NMOS devices. Orthogonal differential pairs of MOSFETs can be utilized to directly measure the mobility component of the overall stress response.

    关键词： threshold voltage,piezoresistive characteristics,CMOS FETs,stress dependencies,mobility variations

    更新于2025-09-04 15:30:14

  • Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

    摘要： Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of 1015 neq∕cm2 and detection efficiencies above 99.5%. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.

    关键词： HV-MAPS,Silicon pixel sensor,Monolithic active pixel sensor,High luminosity LHC,ATLAS ITk upgrade,CMOS

    更新于2025-09-04 15:30:14

  • Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors

    摘要： Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in high-sensitivity CMOS image sensors (CIS) because it is a limiting factor of dark random noise. In this paper, the behaviors of RTN toward changes in SF drain current conditions were analyzed using a low-noise array test circuit measurement system with a ?oor noise of 35 μVrms. In addition to statistical analysis by measuring a large number of transistors (18048 transistors), we also analyzed the behaviors of RTN parameters such as amplitude and time constants in the individual transistors. It is demonstrated that the appearance probability of RTN becomes small under a small drain current condition, although large-amplitude RTN tends to appear in a very small number of cells.

    关键词： source follower (SF) transistors,drain current,CMOS image sensors (CIS),Random telegraph noise (RTN),low-noise array test circuit

    更新于2025-09-04 15:30:14

  • OVERMOS —?CMOS Hi-Res MAPS detectors for HEP applications

    摘要： The OVERMOS project investigates the use of Monolithic Active Pixel Sensors, fabricated using a standard low voltage, high resistivity substrate 180 nm CMOS technology, for tracking and vertexing in HEP applications. Following a description of the main features of this CMOS technology, details will be given of the design of the OVERMOS test pixel structures, which include active pixels, with in-pixel RO electronics, and basic pixel arrays. Preliminary experimental results of fabricated test structures, which include charge collection, obtained using in-pixel laser injection, and comparison of performances before and after neutron irradiation will be shown. Results of 3D TCAD simulation related to charge collection and DC characteristics of the pixel structures will be also shown.

    关键词： MAPS,CMOS

    更新于2025-09-04 15:30:14

  • Handbook of Bioelectronics (Directly Interfacing Electronics and Biological Systems) || CMOS nanowire biosensing systems

    摘要： Lowering the costs of healthcare and increasing its accessibility is a critical need of today’s society. Miniaturized electronic sensors are a possible way to both improve healthcare and lower the cost of medical diagnostics. Their small size and portability can lead to integration into personalized diagnostics tools and emergency care. In addition, faster, smaller and more efficient sensors can greatly impact chemical and biological safety.

    关键词： biosensing,CMOS,nanowire,diagnostics,healthcare

    更新于2025-09-04 15:30:14

  • Synthesis Technique for Low-Loss mm-Wave T/R Combiners for TDD Front-Ends

    摘要： A time-division duplex (TDD) transmit/receive (T/R) millimeter-wave (mm-wave) front-end comprises a power amplifier (PA), a low-noise amplifier (LNA), an antenna switch, and appropriate passive matching and combining networks. In this paper, a synthesis methodology is proposed that minimizes the overall losses by combining the PA output and the LNA input matching networks together with the T/R switch into one network. The technique improves mm-wave transceiver performance in terms of PA efficiency and LNA noise figure. The proposed T/R combiner can achieve high linearity and can handle large PA output voltage swings. The architecture can be implemented in any process which provides high integration capability. A Ka-band implementation is demonstrated using 45 nm CMOS silicon-on-insulator that includes a high power, four-stack-based PA and an inductively source-degenerated cascode-based LNA. Within the front-end, the PA achieves saturated output power of 23.6 dBm with peak power added efficiency of 28%, while the LNA achieves NF of 3.2 dB. The overall chip area is 0.54 mm2, including pads.

    关键词： transmit/receive (T/R) switch,low-noise amplifier (LNA),power amplifier (PA),5G transmitters,stacked power amplifier,silicon-on-insulator (SOI),time-division duplex (TDD),CMOS,millimeter-wave (mm-wave),Ka-band

    更新于2025-09-04 15:30:14

  • [IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - A 112 μW F-band Standing Wave Detector in 40nm CMOS for Sensing and Impedance Detection

    摘要： This paper presents an integrated standing wave detector for F-band sensing applications. The standing wave on a transmission line is detected at 312 probe locations to provide an accurate representation. Standing wave measurements are performed for differential amplitude and phase variations, demonstrating the potential for magnitude and angle detection. The minimum required RF input power is ?25 dBm. The detector is implemented in a 40nm bulk CMOS technology operating from 96-to-140 GHz, while only consuming 112 μW of DC power with a 0.287 mm2 active occupied area.

    关键词： standing wave,sensing,F-band,CMOS,impedance detection,receiver,mm-wave integrated circuits

    更新于2025-09-04 15:30:14

  • Dose and Single Event Effects on a Color CMOS Camera for Space Exploration

    摘要： This paper focuses on the radiation-induced dose and single event effects on a color CMOS camera designed for space missions. Gamma-ray and protons are used to evaluate the tolerance against cumulative dose effects. The dark current of the image sensor is the main parameter impacted by dose effects. Heavy ions testing is performed to evaluate single event effects. SEU, SEFI and SEL have been observed and mitigation techniques were proposed for specific space missions.

    关键词： Total Ionizing Dose (TID),Microlens,CMOS Image Sensor (CIS),Single Event Effects (SEE),Displacement Damage Dose (DDD),Pinned Photodiode (PPD),Active Pixel Sensor (APS),Monolithic Active Pixel Sensor (MAPS),Camera,Color filter,Random Telegraph Signal (RTS)

    更新于2025-09-04 15:30:14

  • [Papers] A Multi Spectral Imaging System with a 71dB SNR 190-1100 nm CMOS Image Sensor and an Electrically Tunable Multi Bandpass Filter

    摘要： This paper demonstrates a multi spectral imaging system utilizing a linear response, high signal to noise ratio (SNR) and wide spectral response CMOS image sensor (CIS), and an electrically tunable multi bandpass optical filter with narrow full width at half maximum (FWHM) of transmitted waveband. The developed CIS achieved 71dB SNR, 1.5 × 107 e– full well capacity (FWC), 190-1100nm spectral response with very high quantum efficiency (QE) in near infrared (NIR) waveband using low impurity concentration Si wafer (~1012 cm-3). With the developed CIS, diffusion of 5mg/dl glucose into physiological saline solution, as a preliminary experiment for non-invasive blood glucose measurement, was successfully visualized under 960nm and 1050nm wavelengths, at which absorptions of water molecules and glucose appear among UV to NIR waveband, respectively.

    关键词： bandpass filter,CMOS image sensor,FWC,multi spectral imaging,SNR,absorption analysis

    更新于2025-09-04 15:30:14