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Higha??efficiency quantum dot lighta??emitting diodes with blue cadmiuma??free quantum dots
摘要： We report outstanding electroluminescence properties of high-efficiency blue cadmium-free quantum dot light-emitting diodes (QD-LED). External quantum efficiency (EQE) of 14.7% was achieved for QD-LED emitting at 428 nm. Furthermore, we developed high-efficiency and narrow wavelength emission zinc selenide (ZnSe) nanocrystals emitting at 445 nm and achieved QD-LED with an EQE of 10.7%. These new QDs have great potential to be used in next-generation QD-LED display with wide color gamut.
关键词： cadmium-free,blue quantum dot,QD-LED,EQE
更新于2025-09-23 15:21:01
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ZnSe:Te/ZnSeS/ZnS Nanocrystals: An Access to Cadmium-Free Pure-Blue Quantum-Dot Light-Emitting Diodes
摘要： Cadmium-free quantum dots (QDs) are attracting considerable research attention because of their low toxicity. However, the bandgap of most cadmium-free QDs avoids the pure-blue region, which confers difficulty in realizing pure-blue quantum-dot light-emitting diodes (QLEDs). In this work, we successfully tuned the emission wavelength of ZnSe/ZnS quantum dots from the violet region (~ 420 nm) to the pure-blue region (450 – 460 nm) by doping Te into the ZnSe core. The ZnSe:0.03Te/ZnSeS/ZnS QDs sample with an emission position of 450 nm and quantum yield of 30% was the most balanced formula. To overcome the energy gap between the hole-transfer layer and QD layers, a specific hole-transfer layer was developed for normal-structure QLEDs. Such structure QLED by ZnSe:0.03Te/ZnSeS/ZnS QDs achieved the pure-blue light emission at 455 nm, a low turn-on voltage of 4.4 V, and external quantum efficiency of 0.33%. Overall, our cadmium-free QLED achieved pure-blue emission, revealing the potential of ZnSe-based pure-blue QLEDs for future displays.
关键词： Pure-blue emission,Cadmium-free,QLEDs,Quantum dots,ZnSe
更新于2025-09-23 15:21:01
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Aqueous Synthesis for Highly Emissive 3-Mercaptopropionic Acid-Capped AIZS Quantum Dots
摘要： Highly ?uorescent and color tunable AgInS2 (AIS) and (AgInS2)x(ZnS)1?x (AIZS) quantum dots (QDs) were prepared via a facile aqueous-phase synthesis using AgNO3, In(NO3)3, Zn(OAc)2, and Na2S as precursors and 3-mercaptopropionic acid (3-MPA) as ligand. Produced AIZS QDs exhibit a small diameter (ca. 2.1 nm) and a cubic structure. Ag-3-MPA and In-3-MPA complexes formed during the preparation of AIS cores were found to play a key role on the fate of the reaction, and an atypical blue-shift of the photoluminescence emission was observed with the increase of the Ag/In ratio. The photoluminescence quantum yield (PL QY) of AIS QDs is modest but increased markedly after the alloying and shelling with ZnS (up to 65%). Size and composition-selective precipitations allowed to separate up to 13 fractions of AIZS QDs with exceptionally high PL QYs (up to 78%), which is the highest value reported for AIZS QDs prepared in the aqueous phase. These high PL QYs combined with their good colloidal stability and photostability make AIZS QDs of high potential as cadmium-free ?uorescent probes for various applications like bioimaging or sensing.
关键词： AgInS2,photoluminescence,bioimaging,cadmium-free,sensing,aqueous synthesis,AIZS,quantum dots
更新于2025-09-23 15:19:57
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Preparation of Highly Stable and Photoluminescent Cadmiuma??Free InP/GaP/ZnS Core/Shell Quantum Dots and Application to Quantitative Immunoassay
摘要： Indium phosphide (InP) quantum dots (QDs) are ideal substitutes for widely used cadmium-based QDs and have great application prospects in biological fields due to their environmentally benign properties and human safety. However, the synthesis of InP core/shell QDs with biocompatibility, high quantum yield (QY), uniform particle size, and high stability is still a challenging subject. Herein, high quality (QY up to 72%) thick shell InP/GaP/ZnS core/shell QDs (12.8 ± 1.4 nm) are synthesized using multiple injections of shell precursor and extension of shell growth time, with GaP serving as the intermediate layer and 1-octanethiol acting as the new S source. The thick shell InP/GaP/ZnS core/shell QDs still keep high QY and photostability after transfer into water. InP/GaP/ZnS core/shell QDs as fluorescence labels to establish QD-based fluorescence-linked immunosorbent assay (QD-FLISA) for quantitative detection of C-reactive protein (CRP), and a calibration curve is established between fluorescence intensity and CRP concentrations (range: 1–800 ng mL?1, correlation coefficient: R2 = 0.9992). The limit of detection is 2.9 ng mL?1, which increases twofold compared to previously reported cadmium-free QD-based immunoassays. Thus, InP/GaP/ZnS core/shell QDs as a great promise fluorescence labeling material, provide a new route for cadmium-free sensitive and specific immunoassays in biomedical fields.
关键词： cadmium-free,quantum dot-based fluorescence-linked immunosorbent assays,thick shell InP core/shell quantum dots,C-reactive proteins,quantitative detection
更新于2025-09-19 17:13:59
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An efficient cadmium free inverted red quantum dot light emitting diodes
摘要： Here, we report an efficient inverted red indium phosphide (InP) comprised QD (InP/ZnSe/ZnS, core/shell structure) light-emitting diode (QLED) by modulating an interfacial contact between the electron transport layer and emissive InP-QDs and applying self-aging approach. The red InP-QLED with optimized interfacial contact exhibits a significant improvement in maximum external quantum efficiency and current efficiency from 4.42% to 10.2% and 4.70 cd/A to 10.8 cd/A, respectively, after 69 days of self-aging, which is an almost 2.3-fold improvement compared with the fresh device. The analysis indicates the consecutive reduction in electron injection and accumulation in the emissive QD due to changes in the conduction band minimum of ZnMgO (0.1 eV after 10 days of storage times) through a downward vacuum level shift according to the aging times. During the device aging periods, the oxygen vacancies of ZnMgO reduces, which leads to lower the conductivity of ZnMgO. As a result, the improvement of charge balance in the device with the suppression of exciton quenching at the interface of ZnMgO and InP-QD.
关键词： Cadmium-free quantum dots,charge balance,charge carrier injection layers,inverted structure,light emitting diode
更新于2025-09-11 14:15:04