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Efficient All-Inorganic CsPbBr <sub/>3</sub> Perovskite Solar Cells by Using CdS/CdSe/CdS Quantum Dots as Intermediate Layers
摘要： Highly e?cient all-inorganic perovskite solar cells require a fast charge transfer from CsPbBr3 to TiO2 to reduce the recombination from trap states. Herein, we insert a CdS/CdSe/CdS quantum dot (QD) layer between the TiO2 and CsPbBr3 layers to fabricate all-inorganic perovskite solar cells. By tuning the thicknesses of the CdSe layer of CdS/CdSe/CdS QDs, the conduction band (CB) levels can be adjusted to -3.72~-3.87 eV. After inserting the QD intermediate layer, the energy o?set between the CB of TiO2 and CsPbBr3 is reduced, thus leading to a charge transfer rate boost from 0:040 × 109 to 0:059 × 109 s?1. The power conversion e?ciency (PCE) of the solar cell with QD intermediate layer achieves 8.64%, which is 20% higher than its counterpart without QDs.
关键词： CdS/CdSe/CdS quantum dots,power conversion efficiency,charge transfer,all-inorganic perovskite solar cells
更新于2025-09-23 15:21:01
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Development of Combinatorial Pulsed Laser Deposition for Expedited Device Optimization in CdTe/CdS Thin-Film Solar Cells
摘要： A combinatorial pulsed laser deposition system was developed by integrating a computer controlled scanning sample stage in order to rapidly screen processing conditions relevant to CdTe/CdS thin-film solar cells. Using this system, the thickness of the CdTe absorber layer is varied across a single sample from 1.5 ??m to 0.75 ??m. The effects of thickness on CdTe grain morphology, crystal orientation, and cell efficiency were investigated with respect to different postprocessing conditions. It is shown that the thinner CdTe layer of 0.75 ??m obtained the best power conversion efficiency up to 5.3%. The results of this work shows the importance that CdTe grain size/morphology relative to CdTe thickness has on device performance and quantitatively exhibits what those values should be to obtain efficient thin-film CdTe/CdS solar cells fabricated with pulsed laser deposition. Further development of this combinatorial approach could enable high-throughput exploration and optimization of CdTe/CdS solar cells.
关键词： combinatorial pulsed laser deposition,power conversion efficiency,grain morphology,CdTe/CdS thin-film solar cells,device optimization,crystal orientation
更新于2025-09-23 15:21:01
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Efficiency Enhancement of Cu(In,Ga)(S,Se)2 Solar Cells by Indium-doped CdS Buffer Layer
摘要： Improving power conversion efficiency of photovoltaic devices has been widely investigated, however, most of researches mainly focus on the modification of the absorber layer. Here, we present an approach to enhance the efficiency of Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar cells simply by tuning the CdS buffer layer. The CdS buffer layer was deposited by chemical bath deposition. Indium doping was done during the growth process by adding InCl3 into the growing aqueous solution. We show that the solar cell efficiency is increased by properly Indium doping. Based on the characteristics of the single CdS (with or without In-doping) layer and of the CIGSSe/CdS interface, we conclude that the efficiency enhancement is attributed to the interface-defect passivation of heterojunction, which significantly improves both open circuit voltage and fill factor. The results were supported by SCAPS simulations, which suggest that our approach can also be applied to other buffer systems.
关键词： CdS buffer layer,interface passivation,SCAPS simulations,Indium doping,CIGSSe-based solar cell
更新于2025-09-23 15:21:01
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[IEEE 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Khulna, Bangladesh (2019.12.20-2019.12.22)] 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Thickness and Doping Optimization of CdS/CIGS P-i-N Photovoltaic Cell: Envisioned for Enhanced Conversion Efficiency
摘要： In this work, a high efficiency CdS/CIGS P-i-N solar cell has been proposed and delineated incorporating CIGS as an intrinsic layer and an immensely doped CIGS as a graded p-type layer. As ensued from our simulation, a conversion efficiency of 20.94% is attained with the coalescence of highly doped TCO layer (ZnO), n-type CdS window layer, CIGS as intrinsic layer and an ungraded (fixed doping concentration) CIGS absorber layer. It is construed that after introducing the graded (several doping concentrations) p-type absorber layer, the efficiency conspicuously amplified to a significant extent. At AM 1.5 solar radiation, the proposed graded cell structure yields an open circuit voltage (Voc) of 0.726 V, a short circuit current density (Jsc) of 57.72 mAcm-2, a maximum power density of 35.27 mWcm-2 and a fill factor (FF) of 84%, conforming to an overall efficiency (η) of 29.69%.
关键词： Intrinsic Layer,p-i-n solar cell,Graded Absorber Layer,CdS/CIGS,BSF layer
更新于2025-09-23 15:21:01
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Multipoint Nanolaser Array in an Individual Core-Shell CdS Branched Nanostructure
摘要： Nanoscale laser arrays are attractive for their potential applications in highly integrated nanodevices, which are always obtained by nanowire arrays with complicated fabrication techniques. Here, a quite different nanolaser array is successfully realized based on a highly ordered core–shell CdS branched nanostructure with implanted Sn nanoparticles in junctions that split the individual multichannel nanostructures to various microcavities with effective light confinement and oscillation, thus to achieve a multipoint nanolaser array. Under the excitation of an ultraviolet laser, the strong band-edge emission can be well reflected between Sn nanoparticles at junctions and effectively scattered into branch segments due to Sn nanoparticles existence in junctions, furthermore oscillating in various microcavities along trunks or branches to form multipoint lasing from Fabry-Pérot (F-P) mode with a quality factor up to 990 and the low threshold at around 3.78 MW cm?2. The corresponding fluorescent microscope images further demonstrate the formation of multipoint F-P lasing at various segments. The theoretical simulation indicates that implanted Sn nanoparticles work as hot point to enhance the confinement of light around the Sn centers. The existence of surface plasmon from the Sn metal particles is further confirmed by the polarization dependent photoluminescence measurement. The results provide a new way to realize nanolaser arrays.
关键词： core–shell structures,CdS branched nanostructure,nanolaser arrays,electric field distribution
更新于2025-09-23 15:21:01
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Design and Analysis of GeSn-based Resonant-Cavity-Enhanced Photodetectors for Optical Communication Applications
摘要： Touch-based interactivity has become an important function in displays. This paper reports on the signal processing of touch signals in which touch interactivity is processed as an image, and correlated double sampling (CDS) algorithm is applied for both common-mode noise reduction and global multivalued offset cancellation. Based on experimental results, we achieved a boost in SNR of 7.6 dB. The processed signal reduces detection errors and power consumption of the system.
关键词： Capacitance touchscreen,common-mode noise,global multivalued offset,correlated double sampling (CDS),image signal processing
更新于2025-09-23 15:21:01
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Self-assembled CdS@BN core-shell photocatalysts for efficient visible-light-driven photocatalytic hydrogen evolution
摘要： CdS@BN NRs core-shell photocatalysts for hydrogen evolution were synthesized by a solvothermal and chemical adsorption method. CdS NRs coated by 5 wt% boron nitride (BN) shell exhibited remarkably visible-light photocatalytic hydrogen evolution activity of up to 30.68 mmol g?1 h?1, nearly 6.79 times higher than that of pure CdS NRs, and the apparent quantum efficiency at 420 nm was 7.5%. Transmission electron microscopy showed the CdS NRs were coated with a thin (~5 nm) BN layer, which together with the hydrogen evolution results proved the photocatalytic ability of CdS NRs was significantly improved. The hydrogen evolution rate of CdS NRs coated by 5 wt% BN remained at 91.4% after four cycles, indicating the photocorrosion of CdS NRs was effectively alleviated. Moreover, the large and close coaxial interfacial contact between the CdS core and the BN shell was beneficial to the separation and transfer of photogenerated electron-hole pairs.
关键词： Core-shell structure,Photocatalytic hydrogen evolution,CdS Nanorods,Boron nitride
更新于2025-09-23 15:21:01
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Transition metal nanohybrid as efficient and stable counter electrode for heterostructure quantum dot sensitized solar cells: A trial
摘要： Counter electrodes are critical components of third generation solar cells. A simple strategy of utilizing iso-structural analogue of graphene, namely 2D molybdenum di-sulphide as nanohybrid with CuS as counter electrode is explored in this work. Formation of heterostructure photoanode with CdSe/CdS quantum dots along with nano-hybrid counter electrode has significantly boosted current density and open circuit voltage. The designed heterostructure and the counter electrode performs exceptionally well with good stability due to synergistic effect, thus spiking new hopes in achieving high efficiency in quantum dot solar cells.
关键词： Hall effect,CuS-MoS2 nanohybrid,CdSe/CdS heterostructures,Mobility
更新于2025-09-23 15:21:01
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Phonon-Driven Energy Relaxation in PbS/CdS and PbSe/CdSe Core/Shell Quantum Dots
摘要： We study the impact of the chemical composition on phonon-mediated exciton relaxation in the core/shell quantum dots (QDs), with 1-nm core made of PbX and the monolayer shell made of CdX, where X=S and Se. For this, time-domain non-adiabatic dynamics (NAMD) based on Density Functional Theory (DFT) and Surface Hopping techniques are applied. Simulations reveal twice faster energy relaxation in PbS/CdS than PbSe/CdSe due to dominant couplings to higher-energy optical phonons in structures with sulfur anions. For both QDs, the long-living intermediate states associated with the core-shell interface govern the dynamics. Therefore, a simple exponential model is not appropriate, and the four-state irreversible kinetic model is suggested instead, predicting 0.9 ps and 0.5 ps relaxation rates in PbSe/CdSe and PbS/CdS QDs, respectively. Thus, 2-nm PdSe/CdSe QDs with a single monolayer shell exhibit the phonon-mediated relaxation time sufficient for carrier multiplications to outpace energy dissipation and benefit the solar conversion efficiency.
关键词： Density Functional Theory,phonon-driven energy relaxation,PbSe/CdSe,PbS/CdS,core/shell quantum dots,Surface Hopping techniques,non-adiabatic dynamics
更新于2025-09-23 15:21:01
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[IEEE 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Khulna, Bangladesh (2019.12.20-2019.12.22)] 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Effect of growth temperature on the structural and optical properties of CdS:O thin films for CdTe solar cells
摘要： Oxygenated Cadmium Sulfide (CdS:O) is used as a window layer for high-performance CdTe thin-film solar cells. In this work, the effect of growth temperature on the physical properties of (CdS:O) layer is reported. The CdS:O layer was synthesized on commercially available soda-lime glass (SLG) by using a reactive radio frequency (RF) sputtering in 1.5% oxygen (O2)/argon (Ar) ambient as a function of substrate temperature (25 °C to 300 °C). The structural and optical properties of the as-grown CdS:O thin films were carried out by X-ray diffraction and UV-VIS-Spectroscopy respectively. The XRD patterns revealed intriguing structural natures of the deposited films such as amorphous/semi-amorphous nature in the substrate temperature range 25 – 150 °C, then polycrystalline nature in the range 200 – 250 °C and again amorphous nature at 300 °C. The transmission spectra exhibited higher optical transmission in the visible wavelength which signifies the enhancement of photo generated current of CdTe solar cells. The bandgap of room temperature (RT) deposited CdS:O thin film for 1.5% O2/Ar was found to be increased 12.50% in comparison with CdS film deposited in pure Ar ambient. Besides, the bandgap of CdS:O films for 1.5% O2/Ar was decreased with the increase of the substrate temperature. Thus, it has been concluded that the CdS:O thin film deposited at RT found to be better for CdTe solar cell application.
关键词： optical bandgap,substrate temperature,CdTe,rf-sputtering,O2/Ar ratio,Crystallite size,CdS:O
更新于2025-09-23 15:21:01