Resistive-type UVa??visible photodetector based on CdS NWs /ZnO nanowalls heterostructure fabricated using in-situ synthesis method

摘要： Here, the resistivity-type UV-visible photodetectors are designed and fabricated by implementation of direct integration between CdS nanowires(NWs) and vertical standing ZnO nanowalls with a facile in-situ synthesis method, in which ZnO nanowalls are employed as good support for anchoring well-dispersed CdS NWs to overcome its random distribution. The photodetectors based on CdS/ZnO heterojunctions demonstrate higher photo response activity than the prinstine CdS NWs and pure ZnO nanowalls photodetectors . The high performance could be attributed to the charge carrier separation efficiency and fast charge transportation facilitated by effective and close contact between CdS NWs and ZnO nanowalls. The results indicate that the ZnO/CdS heterojunctions fabricated by in-situ synthesis method provide a facile approach for nanoscale optoelectronic device.