Effect of Er3+-doping on 65GeS2-25Ga2S3-10CsCl glass probed by annihilating positrons

摘要： Effect of Er3+-doping resulting in pronounced mid-IR fluorescence functionality was examined first in chalcohalide 65GeS2-25Ga2S3-10CsCl glass using positron annihilation lifetime (PAL) spectroscopy. The detected PAL spectra were reconstructed from unconstrained x2-term analysis employing two-state simple trapping model for one kind of positron trapping free-volume defects, the parameterization being performed at the example of 65GeS2-25Ga2S3-10CsCl glass doped with 0.6 at. % of Er3+. The observed decrease in positron trapping rate was proved to be primary void-evolution process in this Er-activated glass, like in many other chalcogenide glasses affected by rare earth doping. The nature of this effect was explained in terms of positron trapping reduction model as competitive contribution of changed occupancy sites in Ga-modified glassy matrix available for rare earth ions and annihilating positrons.