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Nanoparticle Emissions from Metal-Assisted Chemical Etching of Silicon Nanowires for Lithium Ion Batteries
摘要： As one of the most promising anode materials for high-capacity lithium ion batteries (LIBs), silicon nanowires (SiNWs) have been studied extensively. The metal-assisted chemical etching (MACE) is a low-cost and scalable method for SiNWs synthesis. Nanoparticle emissions from the MACE process, however, are of grave concerns due to their hazardous effects on both occupational and public health. In this study, both airborne and aqueous nanoparticle emissions from the MACE process for SiNWs with three sizes of 90 nm, 120 nm, and 140 nm are experimentally investigated. The prepared SiNWs are used as anodes of LIB coin cells, and the experimental results reveal that the initial discharge and charge capacities of LIB electrodes are 3636 and 2721 mAh g-1 with 90 nm SiNWs, 3779 and 2712 mAh g-1 with 120 nm SiNWs, and 3611 and 2539 mAh g-1 with 140 nm SiNWs. It is found that, for 1 kW h of LIB electrodes, the MACE process for 140 nm SiNWs produces a high concentration of airborne nanoparticle emissions of 2.48 × 109 particles/cm3; the process for 120 nm SiNWs produces a high mass concentration of aqueous particle emissions, with a value of 9.95 × 105 mg/L. The findings in this study can provide experimental data of nanoparticle emissions from the MACE process for SiNWs for LIB applications, and can help the environmental impact assessment and life cycle assessment of the technology in the future.
关键词： Lithium ion batteries (LIBs),Metal-assisted chemical etching (MACE),Nanoparticle emissions,Silicon nanowires (SiNWs)
更新于2025-09-23 15:23:52
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Study of the relationship between metal-assisted chemical etching and direction of the applied electric field
摘要： Metal-assisted chemical etching (MACE) has been proposed as a promising alternative for the fabrication of micro/nano-structures on silicon with simple process and low cost. Electric field can be applied during the reaction to control the motion of charged particles so as to accelerate the reaction and form uniform vertical trenches with high aspect ratio. In this paper, boron doped p-type (100) silicon wafers with resistivity of 20～30 Ω·cm was used as substrates. After coated with layers of 5 nm Ti and 10 nm Au, the silicon substrate was immersed into the etchant containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with high HF-to-H2O2 concentration ratio (ρ) and an applied voltage of 40 volts. It was found that the direction of the applied electric field had a great influence on morphologies of the trenches. Deeper trenches with vertical sidewalls and relatively smoother bottom were observed when silicon substrate was connected to cathode of the power supply. Possible interpretation to these phenomena was proposed, and the effect of the electric field intensity and doping concentration was further studied.
关键词： trench morphology,metal-assisted chemical etching,electric field,HF-to-H2O2 ratio,electrode connection
更新于2025-09-23 15:23:52
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[IEEE 2018 International Semiconductor Conference (CAS) - Sinaia, Romania (2018.10.10-2018.10.12)] 2018 International Semiconductor Conference (CAS) - Direct Writing Patterns for Gold Thin Film with DPN Technique
摘要： Dip-pen nanolithography combined with wet-chemical etching has been used to generate gold nanostructures with desired shapes and sizes. Self-assembled monolayers of 16-mercaptohexadecanoic acid have been patterned by DPN in different shapes: dots, lines and complex shapes, interdigits electrodes. AFM and LFM were used to measure the roughness of gold surface and to examine the thiol deposition and binding quality. These results show that DPN can be used as alternative method to generate different patterns used for complex devices, biosensor, and optoelectronic devices.
关键词： wet chemical etching,dip pen nanolithography,MHA,direct-write
更新于2025-09-23 15:22:29
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Optical properties of ZnO deposited by atomic layer deposition (ALD) on Si nanowires
摘要： In this work, we report proof-of-concept results on the synthesis of Si core/ ZnO shell nanowires (SiNWs/ZnO) by combining nanosphere lithography (NSL), metal assisted chemical etching (MACE) and atomic layer deposition (ALD). The structural properties of the SiNWs/ZnO nanostructures prepared were investigated by X-ray diffraction, Raman spectroscopy, scanning and transmission electron microscopies. The X-ray diffraction analysis revealed that all samples have a hexagonal wurtzite structure. The grain sizes are found to be in the range of 7–14 nm. The optical properties of the samples were investigated using reflectance and photoluminescence spectroscopy. The study of photoluminescence (PL) spectra of SiNWs/ZnO samples showed the domination of defect emission bands, pointing to deviations of the stoichiometry of the prepared 3D ZnO nanostructures. Reduction of the PL intensity of the SiNWs/ZnO with the increase of SiNWs etching time was observed, depicting an advanced light scattering with the increase of the nanowire length. These results open up new prospects for the design of electronic and sensing devices.
关键词： nanosphere lithography (NSL),atomic layer deposition (ALD),Silicon nanowires (SiNWs),metal-assisted chemical etching (MACE),ZnO
更新于2025-09-23 15:21:21
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Effect of the anisotropy of etching surface morphology on light-trapping and photovoltaic conversion efficiencies of silicon solar cell
摘要： A homogeneous diamond wire sawing multicrystalline Si surface with nanoscale oval pits was obtained in an acid solution by adding NaNO2, polyethylene glycol–polyvinyl alcohol, and dodecylbenzene sulfonic acid at 12 °C for 130 s. The textured surface showed orientation dependence. The anisotropy of H/D caused different experimental results. The Rave of incident light originating from the direction parallel to saw marks was 22–27% larger than that from the direction perpendicular to saw marks. The photovoltaic conversion efficiency was 0.6–0.8% higher when the thin grid line of Ag electrode was parallel to the saw marks than when in the perpendicular direction. These results indicated that using saw marks can improve the conversion efficiency of solar cells.
关键词： Acid etching,Multi-crystalline silicon,Texturization,Wet chemical etching
更新于2025-09-23 15:21:01
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N-type silicon nanowires prepared by silver metal-assisted chemical etching: Fabrication and optical properties
摘要： This paper reports the fabrication of silicon nanowires (SiNWs) by silver (Ag) metal-assisted chemical etching (MACE) method. N-type Si (100) wafers, doped with phosphorus with the resistivity from 1 ÷ 10 Ω×cm, were selected for sample preparation. Ag particles of about 30 nm in diameter, which were used as the catalytic metal, were aggregated on the surface of the Si wafer immersed in HF (4.6 M) and AgNO3 solution, with the variation concentration of 15–35 mM, for one minute. Consequently, the Si wafers covered with Ag particles were etched in HF (4.8 M) and H2O2 (0.4 M) solution for the formation of vertically aligned SiNWs. We found that the size and density of SiNWs decreased with the increase of AgNO3 concentration. After a delay time of about 30–40 min, the SiNWs growth depended linearly on the etching time. The light emission from the prepared SiNWs observed at room temperature was well resolved with two bands at around 450 nm (~ 2.75 eV) and 700 nm (~ 1.77 eV). The origins of the two emission bands and the comparative aspects are presented and discussed.
关键词： Chemical etching,Silicon nanowires,Photoluminescence,Metal assisted
更新于2025-09-23 15:21:01
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Fine metal mask material and manufacturing process for high-resolution active-matrix organic light-emitting diode displays
摘要： Manufacturing fine metal mask (FMM) is one of the biggest hurdles to realize the ultra-high definition (UHD) grade AMOLED displays for smartphone and augmented reality (AR). We have developed the state-of-the-art material and processing technology to achieve 800ppi or higher-resolution FMMs. The Invar thinning and the thermal damage-free laser ablation process realized us achieving the FMM for UHD displays.
关键词： UHD (ultra-high definition),laser patterning,AR (augmented reality),electro-forming,chemical etching,Invar,FMM (fine metal mask)
更新于2025-09-23 15:19:57
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Development of additive-assisted Ag-MACE for multicrystalline black Si solar cells
摘要： The uniform distribution of silver nanoparticles on the surfaces of diamond-wire sawn multicrystalline silicon (mc-Si) is critical for the texturing of mc-Si by the Ag metal-assisted chemical etching method (Ag-MACE). In this study, an additive containing alkylphenol polyoxyethylene is developed to improve the Ag-MACE process. It enables an even deposition of the silver nanoparticles over the surface of the silicon wafer, so that the entire wafer surface can be uniformly textured with nanostructures. The experimental results show that the additive improves the appearance and performance of solar cells, including their reflectivity, efficiency, internal quantum efficiency and external quantum efficiency. Mass-produced mc-Si solar cells textured using Ag-MACE with this additive have achieved a maximum efficiency of 19.51%, compared with an efficiency of 19.16% for cells fabricated without the additive.
关键词： metal-assisted chemical etching,additive,diamond wire saw,uniform textures,solar cell,multicrystalline silicon
更新于2025-09-23 15:19:57
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Controllable Patterning of Hybrid Silicon Nanowire and Nanohole Arrays by Laser Interference Lithography
摘要： Metal-assisted chemical etching (MACE) is a cost-effective method to fabricate Si nanostructures including silicon nanowires (SiNWs) and silicon nanoholes (SiNHs). However, the preparation of metallic template for MACE would require complex experimental conditions including strict cleaning process and multiple steps. In our study, we applied superlens-enhanced laser interference lithography to directly fabricate complicated metallic patterns and then used MACE to obtain hybrid SiNW and SiNH arrays. Ag films were firstly deposited on Si substrates, and then a 1064 nm high power laser source was utilized to generate two-beam interference electric fields. Since Ag molecules are very sensitive to any input energy change, they tend to break up or aggregate and form different Ag patterns which have a specific energy threshold in order to lower its free energy. By manipulating the distribution of input electric field, we are able to obtain complicated metallic patterns and their corresponding Si nanostructures with feature sizes that range from tens of nanometers to several micrometers.
关键词： silicon nanowires and silicon nanoholes,silicon nanostructures,nanofabrication,metal-assisted chemical etching
更新于2025-09-23 15:19:57
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Controllable photon energy deposition efficiency in laser processing of fused silica by temporally shaped femtosecond pulse: Experimental and theoretical study
摘要： Photon energy deposition plays a crucial role in femtosecond laser irradiation followed by chemical etching processing, which is an emerging technique for the better control of micro/nano structures on fused silica. In this study, we have experimentally and theoretically studied the controllable photon energy deposition in laser irradiation of fused silica by temporally shaped femtosecond laser pulse trains. The experimental result shows that the photon energy deposition efficiency could be either reduced or enhanced by adjusting the total fluence of shaped pulse trains. Furthermore, the sub-pulse interval and intensity ratio of temporally shaped pulse trains were revealed to play a critical role in photon energy deposition. The corresponding experimental observations are qualitatively explained by a plasma model that considers the free electron generation processes and corresponding feedback on the photon energy deposition.
关键词： Photon energy deposition,Femtosecond laser,Temporally shaped pulse,Chemical etching,Fused silica
更新于2025-09-23 15:19:57