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Phosphorous Catalytic‐Doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells
摘要： Herein, the effectiveness of post-deposition catalytic-doping (cat-doping) on various doped silicon alloys, i.e., microcrystalline silicon (μc-Si:H), nanocrystalline silicon oxide (nc-SiOx:H), and microcrystalline silicon carbide (μc-SiC:H), for the use in silicon heterojunction solar cells is investigated. Phosphorous (P) pro?les by secondary ion mass spectrometry (SIMS) reveal the P distribution and its difference in these three silicon alloy ?lms. Conductivity and effective charge carrier lifetime of different samples are found to increase to different extents after cat-doping process. Coexistence of thermal annealing, hydrogenation, and phosphorus doping is con?rmed by using different gases during the cat-doping process.
关键词： silicon alloy,post-depositions,silicon heterojunction solar cells,hot-wire chemical vapor depositions,catalytic chemical vapor deposition
更新于2025-09-19 17:13:59
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Showerhead-Assisted Chemical Vapor Deposition of Perovskite Films for Solar Cell Application
摘要： In the last years, perovskite solar cells have attracted great interest in photovoltaic (PV) research due to their possibility to become a highly efficient and low-cost alternative to silicon solar cells. Cells based on the widely used Pb-containing perovskites have reached power conversion efficiencies (PCE) of more than 20 %. One of the major hurdles for the rapid commercialization of perovskite photovoltaics is the lack of deposition tools and processes for large areas. Chemical vapor deposition (CVD) is an appealing technique because it is scalable and furthermore features superior process control and reproducibility in depositing high-purity films. In this work, we present a novel showerhead-based CVD tool to fabricate perovskite films by simultaneous delivery of precursors from the gas phase. We highlight the control of the perovskite film composition and properties by adjusting the individual precursor deposition rates. Providing the optimal supply of precursors results in stoichiometric perovskite films without any detectable residues.
关键词： precursor deposition rates,stoichiometric perovskite films,showerhead-based CVD,chemical vapor deposition,perovskite solar cells
更新于2025-09-19 17:13:59
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Thickness-controlled synthesis of CoX2 (X = S, Se, Te) single crystalline 2D layers with linear magnetoresistance and high conductivity.
摘要： Two-dimensional (2D) materials especially transition metal dichalcogenides (TMDs) have drawn intensive interests owing to their plentiful properties. Some TMDs with magnetic elements (Fe, Co, Ni, etc.) are reported to be magnetic theoretically and experimentally, which undoubtedly provide a promising platform to design functional devices and study physical mechanisms. Nevertheless, plenty of the theoretical TMDs remain unrealized experimentally. In addition, the governable synthesis of these kinds of TMDs with desired thickness and high crystallinity poses a tricky challenge. Here, we report a controlled preparation of CoX2 (X = S, Se, Te) nanosheets through chemical vapor deposition (CVD). The thickness, lateral scale and shape of the crystals show great dependence with temperature and the thickness can be controlled from monolayer to tens of nanometers. Magneto-transport characterization and Density Function Theory (DFT) simulation indicate CoSe2 and CoTe2 are metallic. Besides, unsaturated and linear magnetoresistance have been observed even up to 9 Tesla. The conductivity of CoSe2 and CoTe2 can reach 5 × 106 and 1.8 × 106 S/m respectively, which is pretty high and even comparable with silver. These cobalt-based TMDs show great potential to work as 2D conductors and also provide a promising platform for investigating their magnetic properties.
关键词： Transition metal dichalcogenides,Magnetoresistance,Conductivity,Two-dimensional materials,Chemical vapor deposition
更新于2025-09-19 17:13:59
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Metal-Semiconductor-Metal ?μ-Ga2O3 Solar-Blind Photodetectors with a Record High Responsivity Rejection Ratio and Their Gain Mechanism
摘要： In recent years, Ga2O3 solar-blind photodetector (SBPD) has been attached great attention for its potential application in solar-blind imaging, deep space exploration, and confidential space communication, etc. In this work, we demonstrated an ultrahigh performance ε-Ga2O3 metal-semiconductor-metal (MSM) SBPD. The fabricated photodetectors exhibited record-high responsivity and fast decay time of 230 A/W and 24 ms, respectively, compared with MSM-structured Ga2O3 photodetectors reported to date. Additionally, the ε-Ga2O3 MSM SBPD presents ultrahigh detectivity of 1.2×1015 Jones with low dark current of 23.5 pA under the operation voltage of 6 V, suggesting its strong capability of detecting an ultraweak signal. The high sensitivity and wavelength selectivity of the photodetector were further confirmed by the record high responsivity rejection ratio (R250nm/R400nm) of 1.2×105. From the temperature-dependent electrical characteristics in the dark, the thermionic field emission and Poole-Frenkel emission were found to be responsible for the current transport in the low and high electric field regimes, respectively. In addition, the gain mechanism was revealed by the Schottky barrier lowering effect due to the defect states at the interface of metal contact and Ga2O3 or in the bulk of Ga2O3 based on current transport mechanism and density functional theory (DFT) calculation. These results facilitate a better understanding of ε-Ga2O3 photoelectronic devices and provide possible guidance for promoting their performance in future solar-blind detection applications.
关键词： rejection ratio,metal-organic chemical vapor deposition,ε-Ga2O3,responsivity,high-performance,solar-blind photodetector
更新于2025-09-19 17:13:59
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Plasmonic gold sensitization of ZnO nanowires for solar water splitting
摘要： This paper reports the synthesis of plasmonic gold sensitized ZnO nanowires by chemical vapor deposition and subsequent photoreduction method. The well sensitization of Au nanoparticles with mean diameter of 5.3 nm on ZnO nanowires yield a higher photocurrent density of 1.06 mAcm-2 under illumination. Accordingly, Au nanoparticles on ZnO nanowires reveals the maximum photoelectrochemical water splitting efficiency of 0.45% at + 0.8 VRHE, which is higher than the ZnO nanowires (0.22% at + 0.8 VRHE). The enhanced photocurrent density and efficiency is due to the effective charge separation and transportation originating from metal support interaction, 1D nanostructure as well as surface plasmon resonance effect of Au nanoparticles.
关键词： Interfaces,Photoelectrochemical water splitting,Chemical vapor deposition,ZnO nanowires,Au nanoparticles
更新于2025-09-19 17:13:59
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Nucleation and growth dynamics of graphene grown through low power capacitive coupled radio frequency plasma enhanced chemical vapor deposition
摘要： We present the study on graphene growth on Cu substrate through low power capacitive coupled radio frequency (RF) plasma enhanced chemical vapor deposition. Fully-covered graphene was grown on Cu substrate through a plasma composed of various argon/methane/hydrogen gas ratio with a 50 W RF power source within a minute under a relatively low substrate temperature at 850 +C. The nucleation and growth dynamics is further investigated through processing and analysis of the images acquired through scanning electron microscopy, and interpreted with a modi?ed Johnson-Mehl-Avrami-Kolmogorov model. The roles of hydrogen in limiting the nucleation density and stabilization of the graphene grain edges are discussed in light of the analysis, and a time dependent grain expansion rate in which the graphene grains grow fast at the early stage and saturated at later stage is implemented into the model to achieve good ?tting of the coverage evolution.
关键词： Johnson-Mehl-Avrami-Kolmogorov model,Plasma enhanced chemical vapor deposition,Growth dynamics,Graphene,Nucleation
更新于2025-09-19 17:13:59
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Non-layered ZnSb nanoplates for room temperature infrared polarized photodetectors
摘要： Non-layered 2D ZnSb nanoplates are successfully synthesized by chemical vapor deposition, which possess narrow band gap and novel anisotropic properties. Infrared polarized photodetectors based on the ZnSb nanoplates are designed and exhibit high responsivity, fast photoresponse speed, great stability, high anisotropic conductivity and linear polarization sensitivity.
关键词： anisotropic properties,ZnSb nanoplates,narrow band gap,chemical vapor deposition,infrared polarized photodetectors
更新于2025-09-19 17:13:59
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Spatially Controlled Lateral Heterostructures of Graphene and Transition Metal Dichalcogenides toward Atomically Thin and Multi-Functional Electronics
摘要： Edge contacts between two-dimensional (2D) materials in the in-plane direction can achieve minimal contact area and low contact resistance, producing atomically thin devices with improved performance. Specifically, lateral heterojunctions of metallic graphene and semiconducting transition metal dichalcogenides (TMDs) exhibit small Schottky barrier heights due to graphene’s low work-function. However, issues exist with fabrication of highly transparent and flexible multi-functional devices utilizing lateral heterostructures (HSs) of graphene and TMDs via spatially controlled growth. This review demonstrates growth and electronic applications of lateral HSs of graphene and TMDs, highlighting key technologies controlling wafer-scale growth of continuous films for practical applications. It deepens the understanding of the spatially controlled growth of lateral HSs using chemical vapor deposition methods, and also contribute to the applications for the scale-up of all-2D electronics with ultra-high electrical performance.
关键词： electronic applications,graphene,lateral heterostructures,chemical vapor deposition,transition metal dichalcogenides
更新于2025-09-19 17:13:59
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Controlled Growth of Single‐Crystal Graphene Films
摘要： Grain boundaries produced during material synthesis affect both the intrinsic properties of materials and their potential for high-end applications. This effect is commonly observed in graphene film grown using chemical vapor deposition and therefore caused intense interest in controlled growth of grain-boundary-free graphene single crystals in the past ten years. The main methods for enlarging graphene domain size and reducing graphene grain boundary density are classified into single-seed and multiseed approaches, wherein reduction of nucleation density and alignment of nucleation orientation are respectively realized in the nucleation stage. On this basis, detailed synthesis strategies, corresponding mechanisms, and key parameters in the representative methods of these two approaches are separately reviewed, with the aim of providing comprehensive knowledge and a snapshot of the latest status of controlled growth of single-crystal graphene films. Finally, perspectives on opportunities and challenges in synthesizing large-area single-crystal graphene films are discussed.
关键词： single-crystal,graphene,grain boundaries,growth,chemical vapor deposition,nucleation
更新于2025-09-19 17:13:59
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Low-temperature chemical vapor deposition growth of graphene films enabled by ultrathin alloy catalysts
摘要： This report introduces a method for fabricating graphene at low temperatures via chemical vapor deposition enabled by ultrathin (～1 nm) nickel-gold (Ni-Au) catalysts. The unique combination of high carbon (C) solubility Ni, low C solubility Au, and an ultrathin layer of a catalyst demonstrates the effectiveness to produce graphene at 450 °C with the layer number independent of growth duration. In contrast to grain-boundary defined catalyst morphology found in thicker (>20 nm) metal catalysts, the ultrathin catalyst morphology leads to the formation of nanoscale metal “islands” during the growth process, which results in curved graphene covering the catalyst. To test the effect of preactivation of the ultrathin catalyst for the formation of graphene, a preanneal process of the catalyst followed by the introduction of a carbon precursor was also investigated. The preanneal process resulted in the formation of carbon nanotubes (CNTs) in lieu of graphene, displaying the impact of the catalytic surface treatment in relation to the produced materials. The results and discussion presented here detail a low-temperature nanoscale manufacturing process that allows for the production of either graphene or CNTs on an ultrathin catalyst.
关键词： graphene,low-temperature growth,nickel-gold catalysts,chemical vapor deposition,ultrathin alloy catalysts
更新于2025-09-19 17:13:59