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Nano-rheology printing of sub-0.2 <i>μ</i> m channel length oxide thin-film transistors
摘要： Down-scaling of the channel length of a fully solution-processed oxide thin-film transistor (TFT) to the nanometer-scale is the key to accessing next-generation devices for Internet-of-Things technology. In this work, we report on the fabrication of an oxide TFT with a channel length of 160 nm, which is far less than those obtained by the current direct-printing techniques, by a newly developed nano-rheology printing (nRP) method. The device had an on/off current ratio, subthreshold voltage, hysteresis, and field-effect mobility of approximately 107, 1.7 V, 0 V, and 0.16 cm2 V s-1, respectively. The key to achieving the sub-micron channel printed TFT is the introduction of a new amorphous La–Ru–O material, which exhibits relatively good conductivity and excellent nRP properties at the nanoscale, for source/drain electrode patterns. Such a short-channel TFT would never be achieved with conventional printing methods, and hence, this approach is highly important for accessing next-generation low-cost, large-area and environmentally friendly printed electronics.
关键词： nano-rheology printing,thermal-imprinting,printed electronics,solution process,oxide thin-film transistor
更新于2025-09-23 15:23:52
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Nickel Doping on Cobalt Oxide Thin Film Using by Sputtering Process-a Route for Surface Modification for p-type Metal Oxide Gas Sensors
摘要： This study proposes a route for surface modification for p-type cobalt oxide-based gas sensors. We deposit a thin layer of Ni on the Co oxide film by sputtering process and annealed at 350 °C for 15 min in air, which changes a typical sputtered film surface into one interlaced with a high density of hemispherical nanoparticles. Our in-depth materials characterization using transmission electron microscopy discloses that the microstructure evolution is the result of an extensive inter-diffusion of Co and Ni, and that the nanoparticles are nickel oxide dissolving some Co. Sensor performance measurement unfolds that the surface modification results in a significant sensitivity enhancement, nearly 200% increase for toluene (at 250 °C) and CO (at 200 °C) gases in comparison with the undoped samples.
关键词： Toluene,Co oxide thin film,Ni-doped,Gas sensor,RF sputtering,CO
更新于2025-09-23 15:22:29
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Trap-assisted enhanced bias illumination stability of oxide thin film transistor by praseodymium doping
摘要： Praseodymium-doped indium zinc oxide (PrIZO) have been employed as the channel layer of thin film transistors (TFTs). The TFTs with Pr doping exhibited a remarkable suppression of the light induced instability. A negligible photo-response and remarkable enhancement in negative gate bias stress under illumination (NBIS) were achieved in the PrIZO-TFTs. Meanwhile, the PrIZO-TFTs showed reasonable characteristics with a high field effect mobility of 26.3 cm2/Vs, SS value of 0.28 V/decade, and Ion/Ioff ratio of 108. X-ray photoelectron spectroscopy (XPS), microwave photoconductivity decay (Micro-PCD) and photoluminescence spectra (PL) were employed to analyze the effects of the Pr concentrations on the performance of PrIZO-TFTs. We disclosed that acceptor-like trap states induced by Pr ions might lead to the suppression of photo-induced carrier in conduction band, which is a new strategy for improving illumination stability of amorphous oxide semiconductors. Finally, a prototype of fully transparent AMOLED display was successfully fabricated to demonstrate the potential of Pr-doping TFTs applied in transparent devices.
关键词： Praseodymium doping,negative bias illumination stress,metal oxide,thin film transistor,photo-response
更新于2025-09-23 15:22:29
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Control of 1-dimensionally structured tungsten oxide thin films by precursor feed rate modulation in flame vapor deposition
摘要： With the constant tungsten wire feed rate of 4 μm/s, the diameter of nanostructures increases with time and the multi-shell nanostructure and/or branched nanostructure eventually appears and grows. As the diameter and length of 1-D nanostructures increase with time, 1-D nanostructures are easily converted into multi-shell and/or branched nanostructures. The tungsten oxide vapor concentration and flame temperature also affect significantly this conversion of 1-D nanostructures. The increase of tungsten wire feed rate with time accelerated the appearance and growth of multi-shell and/or branched nanostructure, while the decrease of tungsten wire feed rate with time could help prepare the 1-D nanostructured WOX thin film without the growth of multi-shell and/or branched nanostructure. By the modulation of tungsten wire feed rate with time, the thin film thicker than 5μm with single shell nanotube structure could be prepared with almost no increase of nanotube diameter. For the preparation of longer 1-D nanostructured WOX thin film, it is found that the smooth decrease of wire feed rate with time, not the abrupt decrease of feed rate, is required in FVD process to prevent the multi-shell structure growth. We demonstrated that various attractive nanostructures can be prepared quickly by just changing precursor feed rate in FVD process for the first time. The results of this study can provide the basis for many practical applications of FVD process to fast fabrication of several interesting nanostructures.
关键词： nanostructure control,tungsten oxide thin film,precursor feed rate,preparation of 1-D nanostructure,flame vapor deposition
更新于2025-09-23 15:22:29
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<i>(Invited)</i> Fabrication Technique for Low-Temperature Aqueous Solution-Processed Oxide Thin-Film Transistors
摘要： Solution-processing of oxide semiconductor is a promising technique for the simple and low-cost fabrication of oxide thin-film transistors (TFTs). We demonstrate improved TFT characteristics by application of a hydrogen injection and oxidation (HIO) process to the fabrication of high-performance low-temperature oxide TFTs. The compatibility of this technique for flexible substrates was also confirmed when the HIO method was applied to solution-processed metal oxide TFTs.
关键词： solution-processing,flexible substrates,low-temperature fabrication,oxide thin-film transistors,hydrogen injection and oxidation
更新于2025-09-23 15:21:21
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Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
摘要： The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec?1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
关键词： tin oxide,thin-film transistor,aluminum doping,adhesive property,oxide semiconductor
更新于2025-09-19 17:15:36
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Pressureless sintering of ZnO thin film on plastic substrate via vapor annealing process at near-room temperature
摘要： In this work, Vapor Annealing Sintering (VAS) process was introduced for low-cost pressureless producing dense Zinc Oxide (ZnO) thin films deposited from nanoparticles at near-room temperature (50 °C). Spontaneous densification evolution from nanoparticulate to a dense film via a dissolution-diffusion-reprecipitation mechanism was observed exposing ZnO layers to the vapor of an acetic acid aqueous solution at isothermal condition. The influence of the annealing on the optical properties of the treated films was investigated in order to study the structural changes. The proposed method can allow new opportunities for simple and low-cost ceramics thin film manufacturing also involving pressure and temperature-sensitive materials.
关键词： Zinc oxide,Thin film,Nanoparticles,Sintering,Vapor annealing
更新于2025-09-19 17:15:36
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[IEEE 2019 International Energy and Sustainability Conference (IESC) - Farmingdale, NY, USA (2019.10.17-2019.10.18)] 2019 International Energy and Sustainability Conference (IESC) - Methodology for the implementation of photovoltaic energy in a microgrid
摘要： A new accurate voltage-programmed pixel circuit for active-matrix organic light-emitting diode (AMOLED) displays is presented. Composed of three TFTs and one storage capacitor, the proposed pixel circuit is implemented both in a-Si and a-IGZO TFT technologies for the same pixel size for fair comparison. The simulation result for the a-Si-based design shows that, during a programming time of 90 s, the pixel circuit was able to compensate for a 3 V threshold voltage ( ) shift of the drive TFT with almost no error. In contrast, the a-IGZO-based pixel circuit, has a larger current error (of around 8%), despite its proven three-fold higher speed.
关键词： Active-matrix organic light-emitting diode (AMOLED),compensation,oxide thin-film transistor (TFT),amorphous silicon (a-Si)
更新于2025-09-19 17:13:59
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Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells
摘要： The photovoltaic properties of Cu2O-based heterojunction solar cells were improved using an n-type layer composed of thin films in a binary oxide semiconductor. This layer was prepared by a low-damage deposition method that applies a system for multi-chamber radio frequency (r.f.) power superimposed direct current (d.c.) magnetron sputtering. For an Al-doped ZnO (AZO)/n-ZnO/p-Cu2O heterojunction solar cell prepared using r.f. power superimposed d.c magnetron sputtering, we achieved the highest efficiency yet reported (3.22%) by optimizing sputtering conditions such as the substrate-target distance and the r.f.:d.c. power ratio. This value represents characteristics that exceed those of AZO/Cu2O solar cells having a similar structure based on r.f. power superimposed d.c magnetron sputtering.
关键词： ZnO,Oxide thin film,Cu2O,Magnetron sputtering,AZO,Solar cells
更新于2025-09-16 10:30:52
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Nonlinear Optical Properties of Zinc Oxide Thin Films Produced by Pulsed Laser Deposition
摘要： In this work, the nonlinear optical properties of Zinc Oxide (ZnO) thin films produced on microscope slide glass substrates at room temperature (RT) using Pulsed Laser Deposition (PLD) method has been presented. PLD system consists of a vacuum chamber (pumped by a turbo molecular pump, backed with a rotary pump), rotating sample and substrate holders, optical thickness measurement system, infrared temperature measurement system and a nanosecond laser system. Previously deposition vacuum chamber evacuated down to ~10-8 mbar and deposition was taken place about 1.3×10-1 mbar oxygen background gas pressure value. Morphological properties of thin films were obtained by Atomic Force Microscopy (AFM) that shows homogenous and smooth film structure. Thin films crystallinity were investigated by using X-Ray Diffraction (XRD) method and showed that polycrystalline ZnO structure with the largest peak corresponding to (002) orientation but some films contain Zn with (101) orientation . The thicknesses of the films were deduced from reflectance measurement using a fitting software and crosschecked with profilometer and AFM measurements. The thickness of the films ranged between 10 nm and 220 nm. Linear optical properties were obtained by using UV-VIS Spectrometer. Furthermore, we presented the nonlinear optical properties of the ZnO thin films that were obtained by the z-scan method.
关键词： Z-scan system,Zinc Oxide Thin Film,Nonlinear Optical Properties,Pulsed Laser Deposition
更新于2025-09-12 10:27:22