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[IEEE 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Brasov, Romania (2019.11.3-2019.11.6)] 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Stable Operation of an Automotive Photovoltaic System under Moving Shadows
摘要： This paper presents a simple mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (Vth) of junction field-effect transistors (JFETs). The random discrete doping (RDD) in the active device area is used to derive an analytical model to compute the standard deviation, σ Vth,RDD of the Vth-distribution for any arbitrary channel doping profiles. The model shows that the Vth-variability in JFETs depends on the active device area, channel doping concentration, and the depth of the channel depletion region of the gate/channel pn-junction. The model is applied to compute σ Vth,RDD for symmetric and asymmetric source/drain double-gate n-channel JFETs. The simulation results show that the model can be used for predicting Vth-variability in JFETs.
关键词： statistical dopant fluctuations,random discrete doping,process variability in JFETs,modeling threshold voltage variability,JFET threshold voltage variability,Junction field-effect transistor (JFET)
更新于2025-09-23 15:21:01
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Europium and terbium lanthanide ions co-doping in TiO2 photoanode to synchronously improve light-harvesting and open-circuit voltage for high-efficiency dye-sensitized solar cells
摘要： In this study, we explore the effects on the incorporation of europium (Eu3+) and terbium (Tb3+) rare-earth ions into titanium dioxide (TiO2) photoanodes in dye-sensitized solar cells (DSSCs). X-ray photoelectron spectroscopy (XPS) studies affirm that the Eu3+ ions are arranged at the cationic locales of Ti4+ in the matrix whereas the site inhabitance was remunerated by Tb3+ ions, supporting that the anatase phase stays unaltered without generating any new deformities. Additionally, the Eu3+ ions decidedly changed the conduction band minimum of TiO2, actually, Tb3+ ions contrarily conversion because of various vacant trap states in the band gap. Besides, the photoinduced electron transfer estimations show an efficient interfacial charge transfer for co-doped TiO2 (kET = 3.1 ns) contrasted with the bare TiO2 (2.6 ns). DSSCs based on Eu3+/Tb3+ co-doped TiO2 display higher efficiency (9.11%) than those for the bare TiO2 (7.20%) and the exclusively Eu3+ (8.01%) or Tb3+ (7.10%) doped samples, which is ascribed to the joined impact of a faster electron transportation and longer electron lifetime in the co-doped TiO2 film. This work may open another approach to further improve the performance of DSSCs by Eu3+/Tb3+ co-doping technique, advancing the development of DSSCs toward commercial applications.
关键词： Co-doping process,Europium (Eu3+)/terbium (Tb3+) lanthanide ions,Stability,Photoanodes,DSSCs,Titanium dioxide (TiO2) nanopowders
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells
摘要： This paper presents a simple mathematical expression to model the effect of statistical dopant fluctuations on threshold voltage (Vth) of junction field-effect transistors (JFETs). The random discrete doping (RDD) in the active device area is used to derive an analytical model to compute the standard deviation, σ Vth,RDD of the Vth-distribution for any arbitrary channel doping profiles. The model shows that the Vth-variability in JFETs depends on the active device area, channel doping concentration, and the depth of the channel depletion region of the gate/channel pn-junction. The model is applied to compute σ Vth,RDD for symmetric and asymmetric source/drain double-gate n-channel JFETs. The simulation results show that the model can be used for predicting Vth-variability in JFETs.
关键词： modeling threshold voltage variability,random discrete doping,process variability in JFETs,statistical dopant fluctuations,JFET threshold voltage variability,Junction field-effect transistor (JFET)
更新于2025-09-19 17:13:59
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Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer
摘要： Purpose – The purpose of this paper was the development of a model enabling precise determination of phosphorus concentration pro?le in the emitter layer of a silicon solar cell on the basis of diffusion doping process duration and temperature. Fick’s second law, which is fundamental for describing the diffusion process, was assumed as the basis for the model. Design/methodology/approach – To establish a theoretical model of the process of phosphorus diffusion in silicon, real concentration pro?les measured using the secondary ion mass spectrometry (SIMS) method were used. Samples with the phosphorus dopant source applied onto monocrystalline silicon surface were placed in the heat zone of the open quartz tube furnace, where the diffusion process took place in the temperature of 880°C-940°C. The measured real concentration pro?les of these samples became template pro?les for the model in development. Findings – The model was developed based on phenomena described in the literature, such as the in?uence of the electric ?eld of dopant ionized atoms and the in?uence of dopant atom concentration nearing the maximum concentration on the value of diffusion coef?cient. It was proposed to divide the diffusion area into low and high dopant concentration region. Originality/value – A model has been established which enabled obtaining a high level of consistency between the phosphorus concentration pro?le developed theoretically and the real pro?le measured using the SIMS method. A coef?cient of diffusion of phosphorus in silicon dependent on dopant concentration was calculated. Additionally, a function describing the boundary between the low and high dopant concentration regions was determined.
关键词： Concentration pro?le,Solar cell,Doping process,Emitter layer,Phosphorus diffusion
更新于2025-09-12 10:27:22