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Improved resistive switching performance in Cu-cation migrated MoS2 based ReRAM device incorporated with tungsten nitride bottom electrode
摘要： The resistive switching characteristics of sputtered deposited molybdenum disulphide (MoS2) thin film has been investigated in Cu/MoS2/W2N stack configuration for Resistive Random Access Memory (ReRAM) application. The benefits of incorporating tungsten nitride (W2N) as a bottom electrode material were demonstrate by stability in operating voltages, good endurance (103 cycles) and long non-volatile retention (103 s) characteristics. Resistive switching properties in Cu/MoS2/W2N structure are induced by the formation/disruption of Cu conducting filaments in MoS2 thin film. Ohmic law and space charge limited current (SCLC) are observed as dominant conduction mechanism in low resistance state (LRS) and high resistance state (HRS) respectively. This study suggests the application of MoS2 thin films with W2N bottom electrode for next generation non-volatile ReRAM application.
关键词： Conducting filament,Resistive switching,Molybdenum disulphide,Thin films,Tungsten nitride
更新于2025-09-10 09:29:36
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Photo-induced negative differential resistance in a resistive switching memory device based on BiFeO3/ZnO heterojunctions
摘要： Photo-induced novel effect in a material with multiple physical properties has highly important potential applications in the photo-electric multifunctional electronic devices. In this work, the BiFeO3/ZnO bilayer films were sequentially prepared by magnetron sputtering method, which displays an obvious photo-modulated conversion between resistive switching (RS) memory and negative differential resistance (NDR) effect. Through theoretical analysis and simulation calculation, suggesting the NDR effect can be attributed to the inner electric field and the efficiently separated photogenerated electrons and holes under light-irradiation in the interface of the BiFeO3/ZnO p–n heterojunctions, while the RS memory behavior can be attributed to the formation of oxygen vacancies assisted Ag conductive filaments. This work opens up a new way to preparation a multifunction electronic device with photo-modulated conversion between RS memory and NDR effect for potential applications in optical electrical bifunctional devices, electronic information and optical quantum computers, and so on.
关键词： Oxygen vacancies,Conducting filament,Negative differential resistance,RRAM,Photo-induced
更新于2025-09-09 09:28:46