Ternary Ti–Si–C alloy film formation on GaN and contact properties

摘要： Ternary Ti–Si–C alloy films were deposited on GaN substrates (n-type and p-type) by the radio- frequency magnetron sputtering method. The electrical properties of contact films with various chemical compositions were investigated. The microstructures were examined by X-ray diffractometry and transmission electron microscopy. The electrical properties of the contact films were improved after annealing at 873 K for 60 s. Ohmic contact characteristics were obtained for n-type GaN. The TiN phase plays an important role in obtaining the ohmic contact. The effect of deposition and annealing on the electrical properties between Ti–Si–C film and GaN are discussed based on the experimental results.