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Critical role of interface contact modulation in realizing low-temperature fabrication of efficient and stable CsPbIBr2 perovskite solar cells
摘要： CsPbIBr2 perovskite solar cells (PSCs) have received considerable concern due to their excellent stability. However, the interface defects and imperfect band alignment between electron transporting layer (ETL) and perovskite is one of the main reasons for hindering further efficiency improvement. Herein, we modulate the band alignment and perovskite crystallization of the ETL/perovskite interface by employing ZnO and SnO2 as ETL, which exhibit high electron mobility and can be fabricated at low temperature. Both ZnO and SnO2-based devices were fabricated at low temperature below 160 ℃. First, the effect of ZnO and SnO2 on the performance of CsPbIBr2 PSCs is systematically investigated. SnO2-based PSCs show a higher power conversion efficiency (PCE) of 10.81% as a consequence of improved Voc and fill factor (FF) as compared to 9.70% of ZnO counterpart, which is attributed to improved band alignment and perovskite crystallization, leading to enhanced electron extraction, reduced interface nonradiative recombination and improved carrier lifetimes. Remarkably, SnO2 ETL can also reduce hysteresis and improve device stability as compared to ZnO ETL. The present study unveils the critical role of interface contact modulation of CsPbIBr2 PSCs and provides an insightful strategy for preparing efficient and stable low-temperature inorganic PSCs.
关键词： Interface contact modulation,Perovskite solar cells,Band alignment,CsPbIBr2
更新于2025-09-23 15:21:01
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Interfacial Voids Trigger Carbon-Based, All-Inorganic CsPbIBr2 Perovskite Solar Cells with Photovoltage Exceeding 1.33??V
摘要： A novel interface design is proposed for carbon-based, all-inorganic CsPbIBr2 perovskite solar cells (PSCs) by introducing interfacial voids between TiO2 electron transport layer and CsPbIBr2 absorber. Compared with the general interfacial engineering strategies, this design exempts any extra modification layer in final PSC. More importantly, the interfacial voids produced by thermal decomposition of 2-phenylethylammonium iodide trigger three beneficial effects. First, they promote the light scattering in CsPbIBr2 film and thereby boost absorption ability of the resulting CsPbIBr2 PSCs. Second, they suppress recombination of charge carriers and thus reduce dark saturation current density (J0) of the PSCs. Third, interfacial voids enlarge built-in potential (Vbi) of the PSCs, awarding increased driving force for dissociating photo-generated charge carriers. Consequently, the PSC yields the optimized efficiency of 10.20% coupled with an open-circuit voltage (Voc) of 1.338 V. The Voc achieved herein represents the best value among CsPbIBr2 PSCs reported earlier. Meanwhile, the non-encapsulated PSCs exhibit an excellent stability against light, thermal, and humidity stresses, since it remains ~ 97% or ~ 94% of its initial efficiency after being heated at 85 °C for 12 h or stored in ambient atmosphere with relative humidity of 30–40% for 60 days, respectively.
关键词： Photovoltage,Stability,Interfacial engineering,CsPbIBr2,All-inorganic perovskite solar cells
更新于2025-09-23 15:21:01
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Growth control and defect passivation toward efficient and low-temperature processed carbon based CsPbIBr2 solar cell
摘要： All-inorganic perovskite CsPbIBr2, has drawn much attention for photovoltaic (PV) application due to its excellent intrinsic stability. However, low device performance and high fabrication temperature still hamper its further progress in flexible application. Herein, Zn substitution has been used to improve the nucleation and growth process for low temperature processed a-phase CsPbIBr2 film. Zn incorporated CsPbIBr2 film exhibits good crystallinity, compact surface morphology and depressed defect state. Low temperature (100 and 160°C) processed carbon based CsPbIBr2 solar cells with improved PV performance have been prepared by using Zn incorporation and room deposited electron transport layer (ETL). A champion efficiency over 9% can be achieved through Zn substitution, which is one of the best values reported for the low temperature processed CsPbIBr2 solar cell without using hole transport layer (HTL). Efficiency over 5% can also be achieved for larger area (1 cm2) rigid and flexible CsPbIBr2 solar cells. These results would provide a new route for preparing high-performance and low temperature processed inorganic perovskite solar cell.
关键词： Carbon electrode,CsPbIBr2,Flexible,Solar cell,Low temperature,Inorganic perovskite
更新于2025-09-23 15:21:01
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Combustion-processed NiO/ALD TiO2 bilayer as a novel low-temperature electron transporting material for efficient all-inorganic CsPbIBr2 solar cell
摘要： Low-temperature ALD TiO2 electron transporting layers (ETLs) are promising for all-inorganic perovskite solar cells (PSCs), such as the CsPbIBr2-based ones. However, the non-ideal interfacial level-alignment between ALD TiO2 and CsPbIBr2, as well as the concomitant defects in ALD TiO2 during preparation of upper CsPbIBr2 film severely limit the performance of final PSC. We report herein a new design of ETL by combining ALD TiO2 with low-temperature combustion-processed NiO. Although the underlying NiO layer has a p-type conductivity and is known as a hole transporting layer (HTL), the NiO/ALD TiO2 bilayer can serve as an ETL with fewer traps, larger conduction band minimum (CBM) offset with CsPbIBr2 film, along with the similar optical transmittance, in contrast with individual ALD TiO2 ETL. Consequently, the resulting optimized CsPbIBr2 PSC yields the superior efficiency of 9.71% and photovoltage of 1.272 V, both of which exceed those of the one based on individual ALD TiO2 ETL and even so-gel TiO2 ETL. Our work verifies the great applicability of NiO/ALD TiO2 ETL for CsPbIBr2 PSC and thereby explores a promising way to develop more low-temperature ETLs by combining conventional HTLs with ALD TiO2 layers.
关键词： NiO/TiO2 bilayer,ALD,Low temperature,All-inorganic CsPbIBr2 solar cells,Solution combustion,Electron transporting material
更新于2025-09-23 15:19:57
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Highly efficient bifacial CsPbIBr <sub/>2</sub> solar cells with a TeO <sub/>2</sub> /Ag transparent electrode and unsymmetrical carrier transport behavior
摘要： Bright red CsPbIBr2 films possess intrinsic semitransparent features, which make them promising materials for smart photovoltaic windows, power plants, curtain walls, top cells for tandem solar cells, and bifacial photovoltaics. In this work, bifacial CsPbIBr2 perovskite solar cells (PSCs) have been fabricated by adopting an ultrathin silver (Ag) film transparent anode and a tellurium oxide (TeO2) optical modifying layer. The results showed that the transmittance of the TeO2 (40 nm)/Ag (11 nm) transparent top anode matched well with the light absorption range of the CsPbIBr2 film, and the resulting bifacial PSCs exhibited PCEs of 8.04% and 5.32% when illuminated from the FTO and Ag sides, respectively. By introducing cesium iodide-treated CsPbIBr2 layers, the PSCs achieved superior PCEs of 8.46% (FTO side) and 6.40% (Ag side) with a bifacial factor of 75.65%, which is the best performance of bifacial CsPbIBr2 PSCs reported to date. Interestingly, an identical cell showed a significantly higher fill factor, more efficient carrier transport, and better efficiency and stability when illuminated from the Ag side than from the FTO side, a phenomenon strongly related to the parasitic absorption of the spiro-OMeTAD layer below 420 nm. Consequently, we have found a route similar to “shooting fish in a barrel” to enhance the carrier transport, suppress the carrier recombination, and improve the stability of bifacial semitransparent CsPbIBr2 PSCs: turning the Ag side towards the sun.
关键词： unsymmetrical carrier transport behavior,perovskite solar cells,TeO2/Ag transparent electrode,bifacial CsPbIBr2 solar cells,semitransparent photovoltaics
更新于2025-09-23 15:19:57
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Vapor-assisted deposition of CsPbIBr2 films for highly efficient and stable carbon-based planar perovskite solar cells with superior Voc
摘要： CsPbIBr2 perovskite, as a promising light harvester, possesses the most balanced bandgap and stability characters among all-inorganic perovskite materials. However, the poor quality of the traditionally one-step solution-processed CsPbIBr2 film always leads to a severe recombination loss and thus a low output potential difference (Voc). Herein, we demonstrate a novel vapor-assisted deposition strategy to construct high-quality CsPbIBr2 films for the first time, in which the crystallization kinetics of the CsPbIBr2 is more easily controllable than that of the one-step spin-coated one. The PbBr2 film acting as the template in the CsPbIBr2 crystal growth is firstly prepared via an antisolvent-washing technique and CsI is then vacuum evaporated onto the PbBr2 layer. By precisely tuning the thickness of the CsI film, highly phase-pure and crystallized CsPbIBr2 crystals are successfully obtained. The optimized CsPbIBr2 film also exhibits a homogeneous morphology and full coverage over the substrate with large grain sizes up to microscale and ultrahigh light absorption capability. The corresponding carbon-based CsPbIBr2 solar cells achieve a champion power conversion efficiency of 8.76% with a superior Voc of 1.289 V. The large-area (1 cm2) devices also deliver an efficiency of 6.78% with an impressive Voc of 1.336 V. Moreover, under the protection of the highly hydrophobic and chemically stable CuPc layer and carbon counter electrode, the unencapsulated devices present excellent moisture and thermal stabilities. Our work provides a new approach for the preparation of cost-effective, highly efficient and robust CsPbIBr2 photovoltaics.
关键词： CsPbIBr2,perovskite solar cell,high Voc,vapor-assisted,highly efficient and stable
更新于2025-09-12 10:27:22
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Enhancing the optical, morphological and electronic properties of the solution-processed CsPbIBr2 films by Li doping for efficient carbon-based perovskite solar cells
摘要： CsPbIBr2 perovskite exhibits the most balanced bandgap and durability features among all the inorganic perovskites, showing great potential in the photoelectric field. Nevertheless, the poor film quality of the traditionally spin-coated CsPbIBr2 restricts the further improvement of the device performance. Here, we develop a novel lithium (Li) doping strategy to promote the optical, morphological and electronic properties of the solution-processed CsPbIBr2 perovskites. Upon incorporating Li+ ions into CsPbIBr2 lattice, highly crystallized and well-oriented CsPbIBr2 crystals are obtained. The as-prepared Li-doped CsPbIBr2 exhibits a higher film coverage over the substrate with larger grains and less grain boundaries compared to the none-doped counterparts. The trap-state densities in the CsPbIBr2 film are also effectively alleviated while the carrier lifetimes are elongated by Li doping, contributing to a lower energy loss and a higher charge collection efficiency. The optimized Li-doped perovskite solar cells (PSCs) demonstrate an excellent champion power conversion efficiency (PCE) of 9.25%, much higher than that of the none-doped devices (7.41%). Furthermore, the unencapsulated devices present a superior air and thermal stability under the protection of the hydrophobic CuPc layer and carbon electrode. Our work provides a new opportunity to fabricate cost-effective and highly efficient CsPbIBr2 PSCs in a facile way.
关键词： carbon-based,perovskite solar cell,Li doping,CsPbIBr2,highly efficient
更新于2025-09-11 14:15:04
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All-Inorganic Perovskite Solar Cells Based on CsPbIBr2 and Metal Oxide Transport Layers with Improved Stability
摘要： Despite the successful improvement in the power conversion efficiency (PCE) of perovskite solar cells (PSCs), the issue of instability is still a serious challenge for their commercial application. The issue of the PSCs mainly originates from the decomposition of the organic–inorganic hybrid perovskite materials, which will degrade upon humidity and suffer from the thermal environment. In addition, the charge transport layers also influence the stability of the whole devices. In this study, inorganic transport layers are utilized in an inverted structure of PSCs employing CsPbIBr2 as light absorbent layer, in which nickel oxide (NiOx) and cerium oxide (CeOx) films are applied as the hole transport layer (HTL) and the electron transport layer (ETL), respectively. The inorganic transport layers are expected to protect the CsPbIBr2 film from the contact of moisture and react with the metal electrode, thus preventing degradation. The PSC with all inorganic components, inorganic perovskite and inorganic transport layers demonstrates an initial PCE of 5.60% and retains 5.56% after 600 s in ambient air at maximum power point tracking.
关键词： inorganic perovskite,CsPbIBr2,metal oxide transport layers
更新于2025-09-11 14:15:04