修车大队一品楼qm论坛51一品茶楼论坛,栖凤楼品茶全国楼凤app软件 ,栖凤阁全国论坛入口,广州百花丛bhc论坛杭州百花坊妃子阁

oe1(光电查) - 科学论文

9 条数据
?? 中文（中国） ▾

  • Unraveling the electrical properties of solution-processed copper iodide thin films for CuI/n-Si solar cells

    摘要： The effects of temperature and liquid-phase iodination on the electrical property of spin coated CuI thin films have been investigated in details. The XRD study indicates that CuI thin films are polycrystalline in nature and I-doping enhances the crystal quality and size of the films. The SEM images show that the surface uniformity of the CuI thin films increases due to I-doping. The doping of iodine increases the conductivity as well as carrier concentration and mobility of the films as confirmed by Hall study. The temperature dependent resistivity of CuI film shows a sharp fall of resistivity at ~80 °C for un-doped films whereas this behavior disappears for I-doped films. The optical transmittance and band gap of the I-doped films also increases indicating high degeneracy of the films. These findings imply that I-doped spin coated CuI thin films are potential candidate for the solution-processed CuI/n-Si solar cells.

    关键词： liquid-phase I-doped,spin coat,CuI thin films,switching-behavior,electrical properties

    更新于2025-11-21 11:18:25

  • Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer

    摘要： The ZnO/Si heterojunction diode can be integrated with the Si process, which has attracted great attention in recent years. However, the large number of interface states at the ZnO/Si heterojunction interface could adversely affect its optoelectronic properties. Here, n-type ZnO thin film was deposited on p-Si substrate for formation of an n-ZnO/p-Si heterojunction substrate. To passivate the ZnO/Si interface, a thin CuI film interface passivation layer was inserted at the ZnO/p-Si heterojunction interface. Electrical characterization such as I–V and C–V characteristic curves confirmed the significant improvement of the heterojunction properties e.g. enhancement of forward current injection, reduction of reverse current and improvement of the rectification ratio. These results showed that the passivation of interface is critical for ZnO/Si heterojunctions.

    关键词： CuI,heterojunction,interface states,electrical properties,ZnO/p-Si

    更新于2025-09-23 15:23:52

  • Hydrothermal growth and their optoelectronic device application of CuI nanostructure

    摘要： Cuprous iodide (CuI) was grown on the Si (100) and Cu films/Si(100) substrate by hydrothermal reaction and hydrothermal evaporation methods. It has been found that all the hydrothermal methods. Different nanostructured CuI have been obtained using photoluminescence (PL) character of nanostructured CuI, the origin of different PL emissions and the different growth mechanisms have been discussed. Then, the nanostructured CuI films have a γ phase with polycrystalline structure. Having analyzed the short-wavelength optoelectronic devices [1-3]. Moreover, CuI possesses some superior properties, such as high hole mobility, excellent p-type conductivity and high transmissivity. These properties make CuI a promising material for applications in the photodetectors [2], transparent conducting films [4], solid-state dye solar cells [5-8] and light-emitting diode [9]. Though different fabrication methods have been used to synthesize CuI [10-14], it is still a challenge to grow epitaxial thin films of CuI with high quality due to the lack of lattice-matched substrates. Commonly for the mismatch substrate, interface strain can be much easier accommodated in the nanostructure than the films. Furthermore, owing to their large surface-to-volume ratio, nanostructured CuI can exhibit special advantage in devices applications, especially for the solid state electrolyte in solar cell and hole transport layer in photodetector applications [1-3]. Here, nanostructured CuI have been synthetized on the Si (100) substrate by hydrothermal methods. The structure and optical properties have been investigated. Photodetector based on n-ZnO/p-CuI heterojunction have been fabricated and the photoelectric properties are also discussed.

    关键词： photodetector,CuI,photoluminescence,hydrothermal

    更新于2025-09-23 15:23:52

  • CuI Film Produced by Chemical Extraction Method in Different Media

    摘要： CuI crystalline thin films were produced on substrates (commercial glass) using chemical extraction method in different chemical bath media. In this study, their structural, optical and electrical properties were analyzed. Transmittance, absorption, optical band gap and refractive index of the films were examined by UV/VIS spectrum. XRD data showed that the film has a hexagonal structure for CuI. Surface and elemental (in terms of ratio) analysis of the films were performed via SEM and EDX analysis. The highest average grain size of CuI was observed for the film produced in aqueous media whereas the lowest average grain size was seen in chloroform bath. The curve formed by the number of crystallites per unit area (N) is different than the curves of dislocation density and average grain size. Number of crystallites per unit area has reached its maximum value in CCl4 bath, but it has been decreased in chloroform bath. In addition, film thickness has varied between 1232 nm and 3624 nm according to the solvent of bath.

    关键词： CuI films,Thin film,Chrystal growth,Optical properties

    更新于2025-09-23 15:22:29

  • Ether-soluble Cu53 Nanoclusters as an Effective Precursor of High-quality CuI Films for Optoelectronic Applications

    摘要： An effective strategy is developed to synthesize high-nuclearity Cu clusters, [Cu53(RCOO)10(C≡CtBu)20Cl2H18]+ (Cu53), which is the largest Cu(I)/Cu(0) cluster reported to date. Cu powder and Ph2SiH2 are employed as the reducing agents in the synthesis. As revealed by single-crystal diffraction, Cu53 is arranged as a four-concentric-shell Cu3@Cu10Cl2@Cu20@Cu20 structure, possessing an atomic arrangement of concentric M12 icosahedral and M20 dodecahedral shells which popularly occurs in Au/Ag nanoclusters. Surprisingly, Cu53 can be dissolved in diethyl ether and spin coated to form uniform nanoclusters film on organo-lead halide perovskite. The cluster film can subsequently be converted into high-quality CuI film via in-situ iodination at room temperature. The as-fabricated CuI film proves to be an excellent hole-transport layer for fabricating highly stable CuI-based perovskite solar cells (PSCs) with 14.3% of efficiency.

    关键词： CuI film,Cu nanocluster,Alkynyl,Perovskite solar cells,Superatoms

    更新于2025-09-23 15:21:21

  • Electrodeposition of CuI Thin Film for Perovskite Solar Cells

    摘要： The CuI thin film has been successfully prepared by using cathodic electrodeposition method. The synthesized film was characterized using advanced techniques such as XRD, SEM-EDX and UV measurements. The films are crystallized in face centered cubic structure. The crystallinity is increasing for the applied potential of -0.3 V and the crystallinity deteriorates on increasing the potential above - 0.3 V. It was also observed that the applied voltage plays an important role. Homogeneously distributed triangular faceted morphology was observed from SEM. This is consistent with the result of XRD that electrodeposited CuI thin films grow preferential orientation along the (111) crystal plane.

    关键词： CuI,Stability,Inverted planar PSC,Electrodeposition,HTM

    更新于2025-09-23 15:19:57

  • Role of metallic dopants on the properties of copper (1) iodide nanopod-like structures

    摘要： The addition of impurities as dopants to any material affects the properties of the material where the dopant modulates the optical and structural properties of the material. Copper (1) iodide films which were successfully doped with Al, Pb and Zn (as metallic dopants) were synthesized by the successive ionic layer adsorption and reaction (SILAR) technique while the morphological, structural, optical and electrochemical properties were investigated using the scanning electron microscope (SEM), X-ray diffraction (XRD), UV–Vis spectrophotometer and potentiostat respectively. The SEM image revealed a nanopod-like structure for the deposited CuI films while the XRD results confirmed the crystalline nature of the films with a face centered cubic structure. The optical results showed a progressive decrease of the absorbance values at increasing wavelengths while the optical bandgap energy of the undoped CuI film reduced from 2.47eV to 1.90eV, 1.75eV and 1.8eV for the Al-doped, Pb-doped and Zn-doped CuI films respectively. The undopedCuI film also showed a higher extinction coefficient value than the metallic-doped CuI films. The Zn-doped film had the maximum specific capacitance of 116 F g?1 at 2 mV/s.

    关键词： Bandgap energies,Metallic dopants,CuI,SILAR,Specific capacitance

    更新于2025-09-19 17:15:36

  • Violet Light-Emitting Diodes Based on p-CuI Thin Film/n-MgZnO Quantum Dot Heterojunction

    摘要： As the lighting technology evolves, the need for violet light-emitting diodes (LEDs) is growing for high color rendering index lighting. The present technology for violet LEDs is based on the high-cost GaN materials and metal?organic chemical vapor deposition process; therefore, there have recently been intensive studies on developing low-cost alternative materials and processes. In this study, for the ?rst time, we demonstrated violet LEDs based on low-cost materials and processes using a p-CuI thin ?lm/n-MgZnO quantum dot (QD) heterojunction. The p-CuI thin ?lm layer was prepared by an iodination process of Cu ?lms, and the n-MgZnO layer was deposited by spin-coating presynthesized n-MgZnO QDs. To maximize the performance of the violet LED, an optimizing process was performed for each layer of p- and n-type materials. The optimized LED with 1 × 1 mm2-area pixel fabricated using the p-CuI thin ?lm at the iodination temperature of 15 °C and the n-MgZnO QDs at the Mg alloying concentration of 2.7 at. % exhibited the strongest violet emissions at 6 V.

    关键词： p-CuI thin ?lm,device optimization,violet light-emitting diode,heterojunction,n-MgZnO quantum dot

    更新于2025-09-19 17:13:59

  • Ether-soluble Cu53 Nanoclusters as an Effective Precursor of High-quality CuI Films for Optoelectronic Applications

    摘要： An effective strategy is developed to synthesize high-nuclearity Cu clusters, [Cu53(RCOO)10(C≡CtBu)20Cl2H18]+ (Cu53), which is the largest Cu(I)/Cu(0) cluster reported to date. Cu powder and Ph2SiH2 are employed as the reducing agents in the synthesis. As revealed by single-crystal diffraction, Cu53 is arranged as a four-concentric-shell Cu3@Cu10Cl2@Cu20@Cu20 structure, possessing an atomic arrangement of concentric M12 icosahedral and M20 dodecahedral shells which popularly occurs in Au/Ag nanoclusters. Surprisingly, Cu53 can be dissolved in diethyl ether and spin coated to form uniform nanoclusters film on organo-lead halide perovskite. The cluster film can subsequently be converted into high-quality CuI film via in-situ iodination at room temperature. The as-fabricated CuI film proves to be an excellent hole-transport layer for fabricating highly stable CuI-based perovskite solar cells (PSCs) with 14.3% of efficiency.

    关键词： CuI film,Cu nanocluster,Alkynyl,Perovskite solar cells,Superatoms

    更新于2025-09-09 09:28:46