- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Bandgap engineering in CuO nanostructures: Dual-band, broadband, and UV-C photodetectors
摘要： In this work, the bandgap of CuO (p-type semiconductor) has been engineered from an indirect bandgap of (cid:2)1 eV to a direct bandgap of 4 eV just by tuning the nanostructure morphology and midgap defect states. The absorption in near-infrared (NIR) and visible regions is ordinarily suppressed by controlling the growth parameters. Considering the increasing scope and demand of varying spectral range (UV-C to NIR) photodetectors, the systematic variation of the available density of states (DOS) at a particular energy level in CuO nanostructures has been utilized to fabricate dual-band (250 nm and 900 nm), broadband (250 nm–900 nm), and UV-C (250 nm) photodetectors. The sensitivity and detectivity of the photodetector for broadband detectors were (cid:2)103 and 2.24 (cid:3) 1011 Jones for the wavelengths of 900 nm and 122 and 2.74 (cid:3) 1010 Jones for 250 nm wavelength light, respectively. The UV-C detector showed a sensitivity of 1.8 and a detectivity of 4 (cid:3) 109 Jones for 250 nm wavelength light. A plausible mechanism for the photoconduction has been proposed for explaining the device operation and the effect of variation in available DOS. The obtained photodetectors are the potential candidates for future optoelectronic applications.
关键词： Broadband photodetectors,Bandgap engineering,CuO nanostructures,Dual-band photodetectors,UV-C photodetectors
更新于2025-09-23 15:21:01
-
Enhanced photoresponse in ZnO nanorod array/p-GaN self-powered ultraviolet photodetectors via coupling with CuO nanostructures
摘要： ZnO nanorod arrays (ZnO NRAs) coupled with coral-like CuO nanostructures (CuO CLNs) were prepared by low-temperature hydrothermal method. Self-powered ultraviolet (UV) photodetectors (PDs) based on ZnO NRAs/CuO CLNs/p-GaN heterostructure were fabricated via a direct-contact method. Under UV illumination (1.46 mW cm?2), the ratios of photocurrent to dark current (Iphoto/Idark), photo-responsivity and speci?c detectivity for the ZnO NRAs/CuO CLNs/p-GaN heterojunction self-powered PD were estimated to be 1143, 1.44 mA W?1 and 5.9×1010 cm Hz1/2/W at 0 V, which were about ～187, ～104 and ～153 times greater than those of the ZnO NRAs/p-GaN self-powered PD, respectively. Moreover, the PD displayed faster response time, excellent stability and repeatability by coupling with CuO CLNs. The mechanism of the enhanced photoresponse performance was discussed through the energy band diagram.
关键词： self-powered,CuO nanostructures,ultraviolet photodetector,ZnO nanorods
更新于2025-09-16 10:30:52